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Laboratorium Badań Mikrostrukturalnych Półprzewodników

Laboratory NL-12

Team Leader

Julita Smalc-Koziorowska

Research topics

The Laboratory of Semiconductor Characterization is part of the Institute of High Pressure Physics at the Polish Academy of Sciences. Using a variety of research methods, such as electron microscopy, X-ray diffraction, deep level transient spectroscopy (DLTS), atomic force microscopy, and secondary ion mass spectrometry (SIMS), we characterize crystals and epitaxial layers of semiconductors, as well as other materials. These techniques provide information about the structural quality of the materials under study and enable the identification of defects.

News

We learned how do dislocations with large Burgers vectors move in InGaN/GaN material system
25/06/2026
Science and research

We learned how do dislocations with large Burgers vectors move in InGaN/GaN material system

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Five NCN grants for IHPP PAS researchers in OPUS 30 and SONATA 21 calls
12/06/2026
Science and research
Important

Five NCN grants for IHPP PAS researchers in OPUS 30 and SONATA 21 calls

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IHPP PAS at the 2nd Finnish-Polish Symposium on Nitride Semiconductor Science and Technology in Helsinki
25/05/2026
Events
Important

IHPP PAS at the 2nd Finnish-Polish Symposium on Nitride Semiconductor Science and Technology in Helsinki

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Praktyki wakacyjne w IWC PAN
15/05/2026
Announcements
Important

Praktyki wakacyjne w IWC PAN

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The profession of a scientist and the GaN crystal properties
30/04/2026
Events

The profession of a scientist and the GaN crystal properties

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Call for abstracts – DRIP21
03/02/2026
Announcements

Call for abstracts – DRIP21

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Ongoing Projects

Optimizing the epitaxial growth of niobium nitride for superconducting electronic applications

  • Artur Lachowski
  • August 2025 August 2028

GaN/AlGaN/SiC conductive structures for the construction of new generations of vertical electronic devices

  • Michał Leszczyński
  • April 2025 March 2028

Mechanisms of Al, Ga, In diffusion in three-dimensional quantum structures of (AlGaIn)N

  • Michał Leszczyński
  • June 2023 June 2027

Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superluminescent InGaN/GaN diodes

  • Grzegorz Staszczak
  • National Science Center
  • January 2022 January 2027

Metal vacancies, their complexes and clusters in nitride semiconductors

  • Robert Czernecki
  • National Science Center
  • January 2022 January 2027

Completed Projects

Badania in-situ relaksacji plastycznej warstw buforowych InGaN w celu zwiększenia limitów zawartyości indu w azotkowych warstwach epitaksjalnych

  • Julita Smalc-Koziorowska
  • National Science Center
  • December 2021 June 2026

Basics of (AlGaIn)N epitaxy on GaN substrates laterally patterned for the production of laser arrays emitting light in the 520-540 nm range for the purpose of three-dimensional image projection

  • Ewa Grzanka
  • January 2022 January 2026

Unusual configuration of misfit dislocations in the InGaN/GaN epitaxial system

  • Joanna Moneta
  • National Science Center
  • August 2024 August 2025

Radiative and non-radiative carbon and vacancy-related defects in GaN

  • Piotr Kruszewski
  • National Science Center
  • January 2021 April 2025

Charakteryzacja in-situ dynamiki wzrostu warstw metodą MOVPE i mechanizmów dyfuzji w półprzewodnikach azotkowych i ich wpływ na optoelektroniczne własności struktur kwantowych InGaN/AlGaN/GaN

  • Michał Leszczyński
  • Narodowe Centrum Nauki
  • January 2020 January 2025

3D diffusion of impurities in GaN - mechanism and role of defects

  • Michał Leszczyński
  • National Science Center
  • February 2020 May 2024

Diffuse X-ray Scattering from Local Chemical Inhomogeneities in InGaN- experimental verification of theoretical model

  • Michał Leszczyński
  • National Science Center
  • January 2019 December 2023

Ultrafioletowe diody laserowe na bazie AlGaInN/GaN

  • Robert Czernecki
  • National Center for Research and Development
  • November 2019 October 2023

Wpływ defektów na własności przyrządów elektronicznych na bazie GaN

  • Michał Leszczyński
  • Narodowe Centrum Badań i Rozwoju
  • September 2020 July 2023

Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with highly doped subcontact n-GaN:O layer to n-GaN and AlGaN/GaN HEMT transistors

  • Monika Masłyk
  • National Science Center
  • October 2021 February 2023

Błędy ułożenia w strukturze wurcytu jako źródła dyslokacji przechodzących w azotkowych heterostrukturach epitaksjalnych

  • Julita Smalc-Koziorowska
  • Narodowe Centrum Nauki
  • March 2017 March 2022

Influence of point defects on InGaN quantum well decomposition in technology of blue/green laser diodes and LEDs

  • Michał Leszczyński
  • Foundation for Polish Science
  • September 2017 May 2021

Research and science