IWC PAN na 2. Fińsko-Polskim Sympozjum Technologii Półprzewodników Azotkowych w Helsinkach

On 19-20 May 2026, Helsinki hosted the 2nd Finnish-Polish Symposium on Nitride Semiconductor Science and Technology - a two-day meeting dedicated to the latest achievements in the field of nitride semiconductors, with a particular focus on gallium nitride (GaN)-based technologies.

The symposium provided an opportunity to review the long-standing Polish-Finnish cooperation in nitride materials research, which began 30 years ago with joint studies of vacancy defects in bulk GaN crystals using positron-based methods.

The programme included presentations covering both the fundamentals of nitride semiconductor physics and the development of materials technologies, structure characterization, semiconductor devices, technology transfer, and the scalability of solutions toward industrial applications. Special attention was given to topics related to the development of the European semiconductor ecosystem and new research and innovation initiatives.

For many years, the Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS) has been developing comprehensive expertise in nitride technologies - from the growth of bulk GaN crystals and substrate manufacturing, through materials characterization, to research on electronic and optoelectronic structures and devices. The participation of IHPP PAS representatives in the symposium provided an opportunity to present the Institute’s results, exchange experience with partners from Finland, and discuss directions for further cooperation.

Symposium participants also had the opportunity to visit the research infrastructure of the University of Helsinki, including laboratories supporting advanced materials research. The event was accompanied by a meeting at the Embassy of the Republic of Poland in Helsinki, attended by the Ambassador of the Republic of Poland to Finland, Mr Tomasz Chłoń, devoted to the importance of scientific and technological cooperation in Polish-Finnish relations.

We would like to sincerely thank the organizers, partners from Finland and Poland, and the Embassy of the Republic of Poland in Helsinki for inspiring discussions and for creating a space for further development of cooperation in the field of nitride semiconductors.