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Laboratorium Epitaksji MBE

Laboratory NL-14

Team Leader

Czesław Skierbiszewski

Research topics

The MBE Epitaxy Laboratory specializes in the fabrication of advanced nitride structures using Plasma-Assisted Molecular Beam Epitaxy (PAMBE).

Our research focuses on the development of light emitters, including light-emitting diodes (LEDs) and laser diodes (LDs), operating across a broad spectral range - from ultraviolet, through blue, to yellow wavelengths. The work covers both the improvement of material parameters affecting emission efficiency and optical losses, as well as the design of innovative device architectures like multiple stacks of laser diodes, resonant-cavity LEDs and addressable arrays of micro-LEDs.

A particular area of expertise of the laboratory includes tunnel junction structures and heavily germanium- and silicon-doped layers. We also conduct theoretical modeling of quantum structures and optimize the optical and electrical parameters of devices fabricated on gallium nitride (GaN) substrates.

To tailor the properties of nitride device structures, we apply electrochemical etching (ECE), which enables the selective introduction of porosity into chosen layers. This technique also supports investigations into dopant incorporation mechanisms at the nanoscale.

In addition, we carry out research on the monolithic integration of NbN superconductors with the GaN semiconductor platform.

Laboratory website

Equipment

Characterization of materials and devices

Veeco Atomic Force Microscope (AFM)

Fabrication of materials and structures

Electrochemical etching setup

Fabrication of materials and structures

Plasma-assisted molecular beam epitaxy machine VG90

Fabrication of materials and structures

Dual-chamber plasma-assited molecular beam epitaxy machine Veeco Gen20a

Research and science