Diody laserowe na daleki ultrafiolet

The aim of the project is to produce light-emitting nitride laser diodes (LDs). in the ultraviolet spectral range UV-C (250-280 nm). We plan to develop a manufacturing method edge UV-C LDs by molecular beam epitaxy using nitrogen plasma (PAMBE – with Plasma Assisted Molecular Beam Epitaxy). The PAMBE method enables the use of an innovative method design concept of UV-C LDs containing tunnel junctions and air covers maintaining the optical mode in the waveguide. Laser diodes provide great ease and flexibility in forming an optical beam (large power, parallel beam), which expands the range of applications of UV-C emitters. UV-C lasers are not yet available commercially on the market and their production is a huge technological challenge. However, it is forecast that UV-C LDs will replace UV-C light-emitting diodes (LEDs) in the future, e.g. In medicine, in sensor applications, in industry. In medicine, they will be used to detect viruses and surface disinfection (COVID19), in phototherapy of skin diseases, in endoscopy. In sensor applications - in the detection of environmental contamination, in the assessment of drinking water quality, and in high-precision distance meters. In industry - they will replace existing light sources used in semiconductor processing, incl laser microscopes, as well as in sub-micron processing of metals and graphene. Tasks of the IWC PAN 1. Production of high-composition AlGaN compounds using the PAMBE method 2. Optimization of AlGaN/AlGaN tunnel junctions for the UV-C range 3. UV-C laser diodes produced by the PAMBE method on a crystalline AlN substrate. The described project concerns one of the most intensively researched recent semiconductor materials two decades. Due to technological barriers, the first UV-C nitride lasers were created only in 2019 (i.e. 24 years after the demonstration of the first violet laser diode by S. Nakamura). Proposed structure laser diode is innovative and its implementation will fill the technological gap in manufacturing UV-C lasers with increasingly higher quantum efficiency, which has a very large application potential. The use of PAMBE technology in the epitaxy of structures allows the use of tunnel junctions in unfolded form new designs of laser diodes for the UV-C range containing air covers that maintain the modes optical in waveguide. This will ensure the elimination of barriers to the development of such diodes related to the relaxation of structures due to the lattice mismatch of the plates and the laser waveguide.