Nanoporowaty GaN i kontrolowana relaksacja pseudopodłoży InGaN jako droga do żółtych diod laserowych

The aim of the project is to build the basis for the production of laser diodes emitting in yellow spectral range. Due to objective material barriers, the incompatibility network and low structural and optical quality of InGaN with high composition - two key elements are proposed - InGaN pseudo-substrates with a larger fixed lattice and the use of MBE technology for the production of lasers emitting yellow light, in which the high composition of indium can be achieved without significant temperature reduction. The idea of the proposed project is to produce InGaN pseudo-substrates, in which relaxation in the InGaN layer will take place in a flexible way. Our proposal has the potential to stand out from others solutions in which plastic relaxation and the generation of mismatch and Vpity dislocations occur. This, of course, is crucial for the manufacture of demanding instruments optoelectronic diodes. The framework action plan is presented in the figure below. Work will be carried out research to understand the relaxation process of InGaN layers and the incorporation of indium into for epitaxy on substrates containing nanoporous GaN (WP1) layers. Parallel we want to investigate the possibility of coalescence of relaxed InGaN layers in order to obtain a planar InGaN pseudo-substrates with increased network constant (WP2). Ultimately, the aim of the project will be to create laser diode structure on a substrate with an increased lattice constant (WP3).