Research topics
The Laboratory of Crystallization (NL-3) focuses on the growth of bulk GaN crystals and nitride-based ternary alloys such as AlGaN, as well as other technologically relevant compounds. The research is driven by a fundamental understanding of crystal growth mechanisms and related processes, including intentional doping.
Crystal growth studies are carried out using two principal methods: Halide Vapor Phase Epitaxy (HVPE) and High Pressure (HP) technology. The high-pressure systems in the laboratory are capable of withstanding extreme conditions, reaching pressures up to 2 GPa and temperatures up to 1450°C simultaneously. These parameters create unique opportunities to investigate crystallization under non-standard thermodynamic conditions. Within this thermodynamic range, changes in crystal structure, defect formation, and resulting physical properties can be systematically examined. In addition, the laboratory develops epitaxial semiconductor structures for optoelectronic and electronic applications using Metal-Organic Vapor Phase Epitaxy (MOVPE).
The laboratory’s activities also include controlled doping and advanced material characterization, including optical microscopy in the visible and ultraviolet ranges, X-ray diffraction, photo-etching, and defect-selective etching. Complementary defect-revealing techniques are employed to identify dislocations and electrically active inhomogeneities in GaN and SiC crystals, while photoetched GaN nanostructures can additionally serve as efficient SERS platforms for trace chemical detection.
The research integrates materials engineering, physics, and chemistry to advance the scientific understanding of crystal growth processes relevant to modern nitride-based semiconductor technologies.
Team Members
Engineer
Research Assistant
PhD student
Physicist
Research Assistant
Engineer
Research Assistant
Technician
Technologist
Assistant Professor
Research Assistant
IT Specialist
Engineer
Engineer
Assistant Professor
Technician
Assistant Professor
Associate Professor
Technician
Research Assistant
Projects
Tomasz Sochacki
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January 2024 January 2027
Equipment
Characterization of materials and devices
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Characterization of materials and devices
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Characterization of materials and devices
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures