Nowatorska technologia wytwarzania podłoży nieprzewodzących azotku galu (GaN) - droga do podłoży typu p

There is a growing demand for gallium nitride monocrystalline substrates for applications in the optoelectronics and electronics industries. In the latter case, it is related to huge expectations for energy transformation and the construction of high-power and high-frequency electronic devices. The main objective of the project is to obtain a non-conductive, highly resistive gallium nitride substrate by implanting ions, which are acceptors, into the conductive semiconductor and bulk diffusion of the implanted dopants during annealing at high temperature and nitrogen pressure. The goal is also to obtain a p-type (hole conductivity) gallium nitride substrate. The annealing process enables electrical activation of the implanted dopants and full reconstruction of the destroyed (after the implantation process) crystal structure. Gallium nitride substrates of the world's highest structural quality and different electrical properties, obtained from crystals grown by ammonothermal and gas-phase methods, will be implanted and annealed. The results of the project meet the needs of the scientific and industrial communities The implementation of the project opens up possibilities for modifying the electrical properties of substrates, eliminating the difficult and costly doping procedure carried out at the stage of the gallium nitride crystallization process.