Nazwa oferty: Postdoctoral Researcher
Organizacja: Instytut Wysokich Ciśnień PAN
Laboratorium: Laboratorium Epitaksji MBE, NL-14
Lokalizacja: al. Prymasa Tysiąclecia 98, Warszawa
Tytuł projektu: Monolithic integration of multicolor micro- and nano-LED arrays
Kierownik projektu: dr hab. inż. Grzegorz Muzioł, prof. IWC PAN
Przewidywane rozpoczęcie: 01.06.2026
Czas zatrudnienia: 24 miesiące
Forma zatrudnienia: umowa o pracę
Wymiar pracy: pełen etat 40h/tydzień
Wynagrodzenie: 13000-14000 PLN (brutto), ok. 9000-10000 PLN (netto)
Liczba stanowisk: 1
Termin nadsyłania zgłoszeń: 15.05.2026, 12:00

Wymagania

Job offer is published also on Euraxcess: https://euraxess.ec.europa.eu/...

PhD or equivalent in Physics

Skills/Qualifications

Essential:

  • PhD in physics, materials science, electronics, or related field
  • Background in semiconductor physics or nanotechnology
  • Experience in experimental research and data analysis
  • Good written and spoken English (min. B2 level)

Desirable:

  • Experience in epitaxy (MBE or MOVPE)
  • Knowledge of GaN/InGaN materials
  • Experience with optical spectroscopy techniques (PL, EL)
  • Scientific publication record

Specific Requirements

Specific Requirements

  • Ability to work independently and as part of a research team
  • Strong motivation for scientific work
  • Willingness to collaborate internationally

Languages

ENGLISH, level: Good

Zakres obowiązków

The Institute of High Pressure Physics PAS is offering a postdoctoral position for 24 months within the research project:

“Monolithic integration of multicolor micro- and nano-LED arrays”

The project aims to develop a novel technology for fabrication of monolithically integrated, addressable micro- and nano-LED arrays emitting visible light. The approach is based on molecular beam epitaxy (MBE) of (Al,In)GaN structures combined with advanced semiconductor processing techniques .

The developed technology will enable new classes of optoelectronic devices with applications in:

  • high-resolution displays,
  • Li-Fi optical communication,
  • augmented and virtual reality systems,
  • optogenetics and super-resolution microscopy .

The project is carried out in collaboration with leading international academic partners and an industrial partner.

Key Responsibilities

  • Conduct research on GaN/InGaN-based micro- and nano-LED structures
  • Perform epitaxial growth using molecular beam epitaxy (MBE)
  • Design and optimize LED structures and tunnel junctions
  • Participate in semiconductor
  • Perform optical and electrical characterization of devices
  • Publish research results in peer-reviewed journals
  • Present results at international conferences
  • Collaborate with international and industrial partners

Benefits

  • Employment in a high-impact, innovative research project
  • Access to state-of-the-art research infrastructure (MBE systems, cleanroom facilities)
  • Collaboration with leading international research groups
  • Opportunities for career development and international mobility
  • Competitive salary of 13000-14000 PLN (gross), which after taxes is 9000-10000 PLN (net)
  • Work environment based on equal opportunity and non-discrimination principles

Wymagane dokumenty

  • Curriculum Vitae (including publication list)
  • Motivation letter
  • Copy of PhD diploma
  • Two reference letters

Jak aplikować?

E-mail: recruitmentmbe@unipress.waw.pl

Selection process

The recruitment process will include:

  1. Formal evaluation of submitted documents
  2. Scientific evaluation of candidates’ achievements
  3. Interview (online or onsite)

Additional comments

The Institute ensures equal opportunities in recruitment and employment, regardless of gender, age, disability, ethnicity, religion or other personal characteristics, in accordance with its Gender Equality Plan and EU regulations.

Klauzura RODO
Wyrażam zgodę na przetwarzanie moich danych osobowych zawartych w dokumentach aplikacyjnych przez Instytut Wysokich Ciśnień Polskiej Akademii Nauk z siedzibą w Warszawie, ul. Sokołowska 29/37, przez okres 12 miesięcy od ich przekazania, w celu realizacji przyszłych procesów rekrutacyjnych.

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