Institute of High Pressure Physics

The National Science Centre (NCN) announced yesterday the results of the OPUS competition. Among the best projects that received funding there are two from our Institute. The projects are focused on the development of new laser types based on GaN.

Dr hab. Henryk Turski received funding for the OPUS project „Next generation visible light sources utilizing photonic crystals”. The main motivation and ultimate goal of the planned effort is to find a way to fabricate photonic crystal surface-emitting lasers (PhC SELs) emitting in visible range. In the project we want to integrate photonic and laser diode structures in order to obtain new class of devices: miniaturized, efficient and with improved light beam properties. Final device schematics and more about the project can be found in the popular science abstract.

Prof. dr hab. Piotr Perlin received funding for the OPUS project "Bridging the Green Gap: Developing High-Power Green Lasers with excellent beam qualities". The project goal to develop a high-power and high quality circular beam surface emitting green laser. The proposed solution uses a VECSEL (Vertical Extended Cavity Surface Emitting Lasers) type structure, where optical pumping will be carried out using efficient blue lasers. The popular science abstract is avaialable here.

Dear Colleagues,

We are pleased to invite you again to the IHPP PAS Seminar on Nitride Semiconductors. The next talk is scheduled on 10 December 2024 at 10:00 (Tuesday). It will be held in a fully remote mode through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

Speaker: Prof. Guangxu Ju (School of Physics, Peking University, China)

Title: Dynamics of Atomic-Scale Surface Step During (In)GaN Growth by MOVPE

Abstract: Link

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

Interactions between condensed matter excitations and electromagnetic cavity fields are fundamental to photonic and quantum research. The research team from Centera Laboratory of our Institute demonstrated quasiparticles comprising phonons, magnons, and optical cavity modes. Magnons and phonons, excited in separate slabs of distinct materials, strongly couple to Fabry–Perot cavity modes formed by the samples. Our research reveals new pathways for obtaining hybrid resonators for tunable terahertz devices.

More about this research can be found in a recently published article M. Białek, Y. Todorov, K. Stelmaszczyk, D. Szwagierczak, B. Synkiewicz-Musialska, J. Kulawik, N. Pałka, M. Potemski, W. Knap, Advanced Functional Materials n/a, 2416037. https://doi.org/10.1002/adfm.202416037

Institute of High Pressure Physics PAS opens the competition for PostDoc in the NL10 laboratory X-PressMatter to work in the NCN Project: ‘Pressure-formed glass materials for innovative energy storage and conversion’, ref. NCN: 2022/45/B/ST5/0400; Primary Investigator: Prof. dr hab. Sylwester J. Rzoska. Detailed conditions of the competition are given in the attached announcement.

Application deadline: December 15, 2024 at 16:00.

The winning candidate will work on innovative materials for the new generation of batteries, both for electrodes and ‘solid’ electrolytes. A special distinguishing feature of the work is the formation of materials using high pressures and the use of advanced implementations for research using broadband electrical impedance.

More information are available by e-mail: sylwester.rzoska@gmail.com

This Sunday, November 3, will mark the start of the largest conference on nitride semiconductors, the 12th International Workshop on Nitride Semiconductors (IWN 2024).

The conference consists of five thematic symposia: Growth, Characterization/Physics, Optical and Optoelectronics, Electronic Devices, and Nanoscale. The Chair persons of the Growth symposium are Prof. Izabella Grzegory and Prof. Michal Boćkowski from our Institute.

The plenary lecture entitled. “Tunnel Junctions for Novel Nitride Optoelectronic Devices” will be given by Prof. Czeslaw Skierbiszewski, head of the MBE Epitaxy Laboratory of IWC PAN.

Two employees of the Institute have been asked to give invited papers: Prof. Henryk Turski will speak on “Epitaxy of III-Nitride Devices on Opposite Facets of the Same Polar Crystal: New Perspectives in Materials Engineering” and Dr. Tomasz Sochacki will talk about “Morphological Evolution During Bulk GaN Growth”. A number of other IWC PAN employees will also speak at the conference, presenting the results of their work on nitride semiconductors. Prof. M. Boćkowski will also appear as a panelist at the Rump Session entitled. “Future of III-Nitride Power Electronics”.