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Two NCN OPUS projects for laser development
Thursday, 05 December 2024 12:48 |
The National Science Centre (NCN) announced yesterday the results of the OPUS competition. Among the best projects that received funding there are two from our Institute. The projects are focused on the development of new laser types based on GaN. Dr hab. Henryk Turski received funding for the OPUS project „Next generation visible light sources utilizing photonic crystals”. The main motivation and ultimate goal of the planned effort is to find a way to fabricate photonic crystal surface-emitting lasers (PhC SELs) emitting in visible range. In the project we want to integrate photonic and laser diode structures in order to obtain new class of devices: miniaturized, efficient and with improved light beam properties. Final device schematics and more about the project can be found in the popular science abstract. Prof. dr hab. Piotr Perlin received funding for the OPUS project "Bridging the Green Gap: Developing High-Power Green Lasers with excellent beam qualities". The project goal to develop a high-power and high quality circular beam surface emitting green laser. The proposed solution uses a VECSEL (Vertical Extended Cavity Surface Emitting Lasers) type structure, where optical pumping will be carried out using efficient blue lasers. The popular science abstract is avaialable here. IHPP PAS Seminar on Nitride Semiconductors
Friday, 29 November 2024 19:04 |
Dear Colleagues, We are pleased to invite you again to the IHPP PAS Seminar on Nitride Semiconductors. The next talk is scheduled on 10 December 2024 at 10:00 (Tuesday). It will be held in a fully remote mode through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ). Speaker: Prof. Guangxu Ju (School of Physics, Peking University, China) Title: Dynamics of Atomic-Scale Surface Step During (In)GaN Growth by MOVPE Abstract: Link Sincerely, Tadeusz Suski Recent study of Centera Laboratory published in Advanced Functional Materials
Thursday, 28 November 2024 12:44 |
Interactions between condensed matter excitations and electromagnetic cavity fields are fundamental to photonic and quantum research. The research team from Centera Laboratory of our Institute demonstrated quasiparticles comprising phonons, magnons, and optical cavity modes. Magnons and phonons, excited in separate slabs of distinct materials, strongly couple to Fabry–Perot cavity modes formed by the samples. Our research reveals new pathways for obtaining hybrid resonators for tunable terahertz devices. More about this research can be found in a recently published article M. Białek, Y. Todorov, K. Stelmaszczyk, D. Szwagierczak, B. Synkiewicz-Musialska, J. Kulawik, N. Pałka, M. Potemski, W. Knap, Advanced Functional Materials n/a, 2416037. https://doi.org/10.1002/adfm.202416037 A competition for the PostDoc position
Monday, 18 November 2024 18:31 |
Institute of High Pressure Physics PAS opens the competition for PostDoc in the NL10 laboratory X-PressMatter to work in the NCN Project: ‘Pressure-formed glass materials for innovative energy storage and conversion’, ref. NCN: 2022/45/B/ST5/0400; Primary Investigator: Prof. dr hab. Sylwester J. Rzoska. Detailed conditions of the competition are given in the attached announcement. Application deadline: December 15, 2024 at 16:00. The winning candidate will work on innovative materials for the new generation of batteries, both for electrodes and ‘solid’ electrolytes. A special distinguishing feature of the work is the formation of materials using high pressures and the use of advanced implementations for research using broadband electrical impedance. More information are available by e-mail: sylwester.rzoska@gmail.com A worldwide celebration of nitride semiconductors - IWN2024
Tuesday, 29 October 2024 10:28 |
This Sunday, November 3, will mark the start of the largest conference on nitride semiconductors, the 12th International Workshop on Nitride Semiconductors (IWN 2024). The conference consists of five thematic symposia: Growth, Characterization/Physics, Optical and Optoelectronics, Electronic Devices, and Nanoscale. The Chair persons of the Growth symposium are Prof. Izabella Grzegory and Prof. Michal Boćkowski from our Institute. The plenary lecture entitled. “Tunnel Junctions for Novel Nitride Optoelectronic Devices” will be given by Prof. Czeslaw Skierbiszewski, head of the MBE Epitaxy Laboratory of IWC PAN. Two employees of the Institute have been asked to give invited papers: Prof. Henryk Turski will speak on “Epitaxy of III-Nitride Devices on Opposite Facets of the Same Polar Crystal: New Perspectives in Materials Engineering” and Dr. Tomasz Sochacki will talk about “Morphological Evolution During Bulk GaN Growth”. A number of other IWC PAN employees will also speak at the conference, presenting the results of their work on nitride semiconductors. Prof. M. Boćkowski will also appear as a panelist at the Rump Session entitled. “Future of III-Nitride Power Electronics”. |
Publiczna obrona rozprawy doktorskiej mgr. inż. Kacpra Sierakowskiego
Monday, 02 December 2024 01:08 |
Dnia 16 grudnia 2024 r. (poniedziałek) o godz. 14:00 w sali seminaryjnej Instytutu Wysokich Ciśnień Polskiej Akademii Nauk w Warszawie, ul. Sokołowska 29/37, odbędzie się publiczna obrona rozprawy doktorskiej mgr. inż. Kacpra Sierakowskiego. Temat rozprawy: „Diffusion of acceptors in ion implanted gallium nitride grown by halide vapor phase epitaxy” Rozprawa doktorska i recenzje dostępne są na stronie BIP IWC PAN Applied Reseach Programme results summary
Friday, 29 November 2024 11:44 |
The National Centre for Research and Development (NCBR) has published an extensive summary and a short movie from the conference summarising the "Applied Research" Programme implemented under the 3rd edition of the Norwegian Funds and European Economic Area (EEA) Funds. The programme was implemented in 2020-2024. Funding was received by 81 projects, in which support was provided to almost 1650 scientists from 139 institutions. The total budget of the Programme was over EUR 81 million. One of the projects that was financed under the Small Grant Scheme (SGS) was implemented at our Institute "Buried periodic Arrays of NANOchannels for single-frequency nitride lasers". We are looking forward to getting more information about the next edition of the Norwegian and EEA Funds. OPUS +LAP for Unipress
Wednesday, 20 November 2024 14:10 |
National Science Center (NCN) announced the results of OPUS 26+LAP/Weave for the bilateral projects conducted with partners in Germany. Dr. Grzegorz Muzioł from MBE Laboratory of our Institute received funding for the project „Multi-junction distributed-feedback laser diodes - synergy of high optical power and single-mode operation”.
The project will develop a completely new optoelectronic device - a multi-junction distributed-feedback laser diode (DFB LD), which is shown schematically in Figure 1. Multi-junction LDs have several pn junctions interconnected with tunnel junctions (TJs). The advantage of this scheme, compared to single junction devices, is that for the same current flow, the recombination occurs in each of the quantum wells (QW). In principle, one can expect an N-fold increase in output power of the multi-junction LD with N sections. This results in differential efficiency (photons per injected electrons) higher than 100%, which comes at the cost of additional voltage required for each section. The DFB grating placed on the surface of the device, as shown in Figure 1, will ensure strong coupling to the optical mode and lasing at only one wavelength – the one that matches the grating. The demonstration of visible multi-junction DFB LDs will open a new field of GaN-based devices and stimulate new research directions. Abstract of the project is available here. The project will be conducted in collaboration between Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS), CEZAMAT Warsaw University of Technology and group of Prof. Ulrich Theodor Schwarz from Technische Universität Chemnitz (TU Chemnitz). Figure 1. (a) A schematic showing the concept of a multi-junction distributed feedback laser diode composed of three sections interconnected with tunnel junctions (TJ). The third order optical mode is drawn with maxima in the three quantum well (QW) regions. The light propagating in the device couples to the DFB grating that is placed on the surface and ensures lasing in a single mode. (b) Schematics of a band diagram for a LD stack (click to enlarge the Figure). Dr. Shiv Singh contribution to IBS2app2025
Tuesday, 05 November 2024 12:07 |
Dr. Shiv Singh from our Institute, Laboratory of Superconductors, serves as a program committee member for the 2nd international workshop dedicated on iron-based superconductors “Iron-based Superconductors: Advances towards applications 2025 (IBS2app 2025)”. IBS2app 2025 will be held in Miyazaki, Japan from 13th to 15th February 2025. The IBS2app 2025 offers researchers a platform for scientific discussion and information exchange on iron-based superconductors. Dr. Singh will also deliver an invited talk titled "Review on high pressure growth effect on iron-based superconductors” at this workshop. Dr. Singh's research team has demonstrated that high-pressure growth techniques can effectively improve the superconducting properties and sample quality of high Tc superconductors. This talk will provide a comprehensive overview of the properties of iron-based superconductors by considering different kinds of samples under ambient and high-pressure effects. More details can be found here: https://smartconf.jp/content/ibs2app/speakers |
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