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Invited lecture at ION 2025 conference Sunday, 08 June 2025 13:40 |
Professor Michał Boćkowski, Director of IWC PAN, has been invited to give an invited lecture at the ION 2025 – Ion Implantation and Other Applications of Ions and Electrons conference, which will take place from 24 to 26 June 2025 in Lublin, Poland, organized by Maria Curie-Skłodowska University and Lublin University of Technology. The title of his talk is: “Shaping the Future of GaN-on-GaN Technology”. The lecture will focus on the development of advanced GaN-on-GaN structures and their potential in high-power and high-frequency applications. Conference website: https://ion.umcs.pl
IHPP PAS Seminar on Nitride SemiconductorsFriday, 06 June 2025 13:46 |
Dear Colleagues, We are pleased to invite you to the next IHPP PAS Seminar on Nitride Semiconductors. The talk will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ). The talk is scheduled on Friday 13.06.2025 at 15:00 CEST. Speaker: Prof. Huili Grace Xing (Cornell University, Ithaca, USA) Title: 2D Hole Gas at GaN/AlN interface – an Unprecedented Platform to Probe the Valence Band of GaN Abstract: Link Sincerely, Tadeusz Suski
Two OPUS and one SONATA project granted by NCN for Unipress scientistsMonday, 02 June 2025 13:28 |
We are pleased to announce that the National Science Centre (NCN) has published the results of the OPUS 28 and SONATA 20 competitions, where scientists from the Institute of High Pressure Physics PAS have received funding for three projects. The winners are:
Congratulations!
Publiczna obrona rozprawy doktorskiej mgr inż. Joanny ŁośThursday, 15 May 2025 23:05 |
Dnia 26 maja 2025 r. (poniedziałek) o godz. 13:00 w sali seminaryjnej Instytutu Wysokich Ciśnień Polskiej Akademii Nauk w Warszawie, ul. Sokołowska 29/37, odbędzie się publiczna obrona rozprawy doktorskiej mgr inż. Joanny Łoś. Temat rozprawy: „Charakterystyka zjawisk przedprzejściowych i dynamiki w materiałach ciekłokrystalicznych i ich nanokoloidach” Rozprawa doktorska i recenzje dostępne są na stronie BIP IWC PAN.
FENG project for GaN/AlGaN/SiC structuresSunday, 11 May 2025 15:01 |
The National Center for Research and Development (NCBiR) as the Intermediate Institution for Priority I FENG 2021 has completed the evaluation of projects submitted in the call no. FENG.01.01-IP.01-005/23 – SMART Path Projects implemented in consortia. The projects were applied for by consortia with or without the participation of a large enterprise. In the latter category, the first place in the ranking list of co-financed projects was taken by the project implemented in the consortium SEEN Semiconductors Sp. z o. o. and the group of Prof. Michał Leszczyński from the NL-12 Laboratory of Semiconductor Characterization. There are 51 projects (out of 566 applications) that received co-financing for the amount of PLN 686,870,078.42. Project Title: Conductive GaN/AlGaN/SiC structures for the construction of new generations of vertical electronic devices. Project acronym: "TranzGaN" The aim of the project is to develop a technology for the growth of a conductive AlGaN:Si buffer on SiC substrates using the MOVPE method. For this purpose, the flow of reagents, temperature, growth pressure and disorientation of SiC substrates will be optimized. The result of this is to prepare a buffer layer with good electrical conductivity and the lowest possible dislocation density in the GaN layer grown on this buffer. This will allow for the production of epitaxial structures of vertical devices such as CAVET transistors, p-i-n diodes or laser diodes, which will significantly expand the scientific experience of the Institute. Project value: PLN 4,455,429.57 European Funds contribution: PLN 3,752,662.00
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Invited talk at WOCSDICE - EXMATEC 2025Sunday, 08 June 2025 13:02 |
Professor Michał Boćkowski, Director of the Institute of High Pressure Physics PAS, has been invited to deliver a lecture at the international WOCSDICE - EXMATEC 2025 conference, which will take place from 16 to 20 June 2025 in Cádiz, Spain. This joint event merges the 48th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) and the 19th Workshop on Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC) – two renowned conferences in the field of compound semiconductor materials and technologies. Professor Boćkowski will present an invited talk entitled “Shaping the Future of GaN Crystal Growth Technology”, highlighting IWC PAN's latest progress in gallium nitride (GaN) crystal growth and its applications in high-power electronics and wide bandgap technologies. Conference website: https://we2025.eu
From epitaxy to leadership - COST webinarFriday, 06 June 2025 13:25 |
European Network for Innovative and Advanced Epitaxy - OPERA COST Action CA20116 - invites to a webinar From epitaxy to leadership - a woman’s path in science of semiconductors that will be given by prof. Evelyne GIL from Université Clermont Auvergne in France on June 18, 2025 at 2 pm (GMT+1, Poland time) on-line via Zoom platform. Abstract and speaker biography are avaialble under this link.
High-Tc iron-based superconductors by spark plasma sintering techniqueMonday, 02 June 2025 13:12 |
In the recent study, Prof. Singh’s research team has investigated the effect of “spark plasma sintering (SPS)” process on the superconducting properties of iron-based superconductors in collaboration with Shibaura Institute of Technology (SIT), Japan. They have also conducted a comparative analysis of conventional, high-gas-pressure, and SPS techniques to understand their impact on superconducting properties. Interestingly, the SPS process increased the critical current density without significantly affecting the critical transition temperature, which is attributed to the enhanced density of the samples. More details about this study can be found in the published paper by: Mohammad Azam, Tatiana Zajarniuk, Konrad Kwatek, Paolo Mele, and Shiv J. Singh entitled “Effect of spark plasma sintering on the superconducting properties of Sm-based oxypnictide” Cryogenics 150, 104125 (2025) (Elsevier); https://doi.org/10.1016/j.cryogenics.2025.104125
Figure: The variations of (a) the onset transition temperature (Tconset), (b) the transition width (ΔT), (c) the room temperature resistivity (ρ300 K), (d) the Residual Resistance Ratio (RRR = ρ300 K / ρ60 K), and (e) the critical current density (Jc) of different SmFeAsO0.80F0.20 bulks prepared by conventional (0 MPa), high gas pressure (500 MPa) and SPS (45 MPa) processes under the different growth pressures. FNP START scholarships 2025Thursday, 15 May 2025 09:48 |
We are proud to announce that among the winners of the FNP START scholarship funded by the Foundation for Polish Science (FNP) are Mikołaj Chlipała and Mateusz Hajdel from the MBE Epitaxy Laboratory of our Institute of High Pressure Physics PAS. Congratulations to all the winners! The list of the 100 most talented young scientists - the winners of the START 2025 competition implemented by the Foundation for Polish Science - has been just announced on the FNP webpage. In this competition, FNP awards researchers under thirty who, despite their young age, can boast of outstanding scientific achievements. The FNP's START programme is the oldest scholarship programme in Poland. Its aim is to support outstanding young scientists and encourage them to further their scientific development. More about the START programme here.
FIRST TEAM for dr hab. Henryk TurskiWednesday, 07 May 2025 11:39 |
The Foundation for Polish Science (FNP) has announced the results of the FIRST TEAM competition financed by the FENG program. The aim of this program is to enable young researchers to create new teams that will employ young scientists and conduct innovative research with results that have practical applications. 174 projects were submitted to the 1/2024 recruitment. 18 projects received a total amount of PLN 70,984,310.92 (success rate: 10.34%). The top three highest rated projects included the project "Double-Sided Epitaxy: A New Approach to Semiconductor Device Integration" leaded by dr hab. Henryk Turski, prof. IWC PAN from our Institute at the MBE Epitaxy Laboratory. Congratulations! More details, including a ranking list of projects, are available on the FNP website.
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