- Warsaw-4-PhD School
- Doctoral studies
Events
Solid State Physics Seminar 24.10.2024
Monday, 21 October 2024 12:11 |
Prof. dr hab. Izabella Grzegory from our Institute will give a lecture „High Pressure in Physics and Engineering of Hexagonal Boron Nitride” on Solid State Physics Seminar organized by the Faculty of Physics, University of Warsaw. Seminar will be held on October 25, 2024 at 10:15 in the stationary mode at the Faculty of Physics room 0.06. Detailed information and the abstract are available on the website: http://www.fuw.edu.pl/seminarium-fizyki-ciala-stalego.html Publication in Bioactive Materials IF=18.0
Friday, 11 October 2024 15:23 |
The cooperation of two institutes of the Polish Academy of Sciences (the Institute of Metallurgy and Materials Science in Krakow and the Laboratory of High Pressure Plasticity of our Institute of High Presure Physics) resulted in a publication in the prestigious journal Bioactive Materials. The paper M. Gieleciak, A. Jarzębska, Ł. Maj, P. Petrzak, M. Kulczyk, Ł. Rogal, and M. Bieda "Influence of magnesium addition on microstructural and mechanical stability of hydrostatically extruded biodegradable zinc alloys" Bioactive Materials 44, 1 (2025) shows the effect of hydrostatic extrusion on the properties of biodegradable zinc-magnesium alloys. The process of shaping the properties of these materials using high pressures impacts their homogeneity and microstructure fragmentation (mechanical properties) as well as thermal stability in operating conditions (as an implant in a living organism). Unipress Thursday Seminar
Thursday, 03 October 2024 11:40 |
Development of bioabsorbable metals is of great importance since they can be used to produce temporary implants, replacing permanent ones, and thus limiting some harmful side-effects related to their long-term presence in a patient body. One of the most promising materials for such an application is zinc (Zn) due to its optimal corrosion rate. However, the mechanical properties of pure zinc are far from being acceptable for a proposed application. Alloying with other elements and additional plastic deformation such as hydrostatic extrusion (HE) can significantly improve material strength thus enabling applications for orthopedic fixtures such as bone screw implants. Institute of High Pressure Physics PAS invites you to its Unipress Thursday Seminar that will be given by dr inż. Jacek Skiba from Laboratory of Plastic Deformation Under High Pressure, Institute of High Pressure Physics. The talk is titled „Advanced zinc alloys for biomedical applications - Effect of plastic deformation by hydrostatic extrusion method on microstructure, mechanical and functional propertiess” Join us online via Zoom platform on Thursday, October 31, 2024 at 3:00 pm. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl Abstract of the talk is here. IWN 2024
Sunday, 02 June 2024 22:30 |
12th International Workshop on Nitride Semiconductors (IWN 2024) will be held this year in O'ahu, Hawai'i, on November 3-8, 2024. It is organized by Profs.Zlatko Sitar and Ramón Collazo. The IWN 2024 will bring together researchers from around the world to discuss the latest advances in the field of III-Nitride semiconductors. IWN 2024 will celebrate the achievements of Profs. Asif Khan and Russel Dupuis as honorary chairs. Prof. Czesław Skierbiszewski from our Institute was invited to give a plenary talk: „Tunnel Junctions for Novel Nitride Optoelectronic Devices”. |
Konferencja "Lasery w medycynie i stomatologii"
Monday, 14 October 2024 15:31 |
Dnia 9 października 2024 na Uniwersytecie Medycznym we Wrocławiu odbyła się międzynarodowa konferencja p.t. "Lasery w medycynie i stomatologii". Wykład inauguracyjny wygłosił prof. Witold Trzeciakowski z naszego Instytutu Wysokich Ciśnień PAN. Omówił on zalety laserów półprzewodnikowych i opisał wspólny projekt badawczy realizowany przez IWC PAN, Uniwersytet Medyczny we Wrocławiu oraz Warszawski Uniwersytet Medyczny. W tym projekcie IWC PAN dostarczał laserowe źródła światła niebieskiego, zielonego i czerwonego, a na uniwersytetach medycznych wykonywano badania (in vitro i kliniczne) z zastosowaniem tych laserów. Nowością było otrzymanie trzech długości fali lasera w światłowodzie co pozwalało na ciekawe badania oddziaływania promieniowania z tkanką. Projekt był przykładem owocnej współpracy interdyscyplinarnej, a jego efektem jest m. in. 9 publikacji w międzynarodowych pismach medycznych. W trakcie konferencji dokonano przeglądu zastosowań laserów w dermatologii, urologii, okulistyce, stomatologii i chirurgii. Program dostępny jest pod linkiem. Wykład i całą konferencję można odsłuchać na YouTube. Wystąpienie prof. Witolda Trzeciakowskiego od 14 do 50 minuty nagrania. Spotlight talk - prof. Joseph Casamento
Monday, 07 October 2024 17:59 |
The Warsaw Doctoral School in Natural and Biomedical Sciences and the Institute of High Pressure Physics PAS cordially invites you to a SPOTLIGHT TALK: "Enhancing Functionality of Nitride Semiconductors: Examples of Aluminum Boron Nitride and Aluminum Scandium Nitride" given by Prof. Joseph Casamento from Massachusetts Institute of Technology, Department of Materials Science and Engineering, USA. When and where: Tuesday, October 15, 2024, 14:00 (duration: 60 min + more) at the IHPP PAS al. Prymasa Tysiąclecia 98, seminar room 2nd floor and online via Zoom. Abstract and the link to Zoom meeting are available in this file. Dualtronics - novel concept for monolithic device integration
Wednesday, 25 September 2024 17:03 |
Scientists from MBE Laboratory NL14 at the Institute of High Pressure Physics PAS (IHPP PAS, Unipress), in collaboration with groups at Cornell University (CU), have published the results of their recent study in Nature in a paper "Using both faces of polar semiconductor wafers for functional devices" by L. van Deurzen, E. Kim, N. Pieczulewski, Z. Zhang, A. Feduniewicz-Zmuda, M. Chlipala, M. Siekacz, D. Muller, H.G. Xing, D. Jena, and H. Turski. Demonstrated device is the first monolithic integration of a light source (light-emitting diode, LED) and a transistor (high electron mobility transistor, HEMT) on opposite sides of the same bulk semiconductor substrate. Therefore the authors introduce a term "dualtronics" to describe this concept and differentiate it from previous solutions. By using a polar bulk GaN substrate - recognized as the highest-quality bulk GaN substrate available, also grown at Unipress - they were able to amplify the advantages of the devices by utilizing the built-in field inherent in the material. The monolithic integration of both devices on the same crystal enables the full utilization of the substrate's surface area and allows for denser packing of LED pixels. Bulk crystal growth, surface preparation, dual-side epitaxial growth (schematically shown in the figure below), and initial characterization were all performed at IHPP PAS. Meanwhile, the dual-side processing of the LED and HEMT, microscopy characterization, and monolithic modulation of light emission from the LED by the HEMT were carried out at CU. This work represents a promising starting point for the broader development of dual-side integrated optoelectronic and electronic devices, not only within the III-nitride material system. |
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