Institute of High Pressure Physics

Dnia 20 października 2022 r. (czwartek) o godz. 14:00 w sali seminaryjnej Instytutu Wysokich Ciśnień Polskiej Akademii Nauk, ul. Sokołowska 29/37, 01-142 Warszawa, odbędzie się publiczna obrona rozprawy doktorskiej mgra inż. Grzegorza Piotra Gajdy.

Temat rozprawy: „Wpływ ciśnienia na syntezę i własności nadprzewodzące podwójnie domieszkowanego związku MgB2 i domieszkowanego związku FeSe”

Pełna treść zawiadomienia

Streszczenie rozprawy doktorskiej

Recenzja 1

Recenzja 2

We invite you to follow the live broadcasts from the Anniversary Symposium "Unipress 50" from the Staszic Palace. The broadcasts will take place on the official YouTube channel of the Polish Academy of Sciences in real time and it is not planned to be available later.

Symposium "Highlights in III-N semiconductors, THz physics and nanomaterials":

• October 7, 2022
• October 8, 2022

The detailed program of the Symposium can be found here

We invite you to take advantage of this unique opportunity and listen to excellent scientific talks presenting the current state of knowledge in the various fields of activity of our Institute and the perspectives for their future development.

Researchers at North Carolina State University,  Adroit Materials and the Institute of High-Pressure Physics of the Polish Academy of Sciences demonstrated a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via magnesium (Mg) implantation followed by ultra-high-pressure annealing (UHPA). The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm2. The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV/cm. These results underline that high-performance GaN JBS can be performed by Mg implantation and UHPA.

For more details see:

https://www.semiconductor-today.com/news_items/2022/sep/ncsu-adroit-070922.shtml

https://iopscience.iop.org/article/10.35848/1882-0786/ac8f81/meta