Events
Get a PhD in physics!!!
|
|
| Read more... |
Konkurs SIMP „Osiągnięcie Techniczne 2024 Roku” Tuesday, 17 June 2025 10:54 |
Gratulujemy zespołowi z Laboratorium Plastyczności pod Wysokim Ciśnieniem (NL1) zajęcia drugiego miejsca w Ogólnopolskim Konkursie XVIII edycja „Osiągnięcie Techniczne 2024 Roku” organizowanym przez Stowarzyszenie Inżynierów i Techników Mechaników Polskich (SIMP) w kategorii "osiągnięcia wdrożone w przemyśle (P)". Osiągniecie „Innowacyjne elektrody do procesu drążenia elektroerozyjnego wgłębnego o podwyższonej żywotności” zgłoszone zostało przez Instytut Wysokich Ciśnień PAN - dr inż. Jacek Skiba, dr hab. Mariusz Kulczyk i firmę Gemet Elżbieta Czerwieniak z siedzibą w Józefowie - Paweł Czerwieniak. Gratulujemy! Więcej informacji i pełna lista nagrodzonych i wyróżnionych pod linkiem.
Invited talk at WOCSDICE - EXMATEC 2025Sunday, 08 June 2025 13:02 |
Professor Michał Boćkowski, Director of the Institute of High Pressure Physics PAS, has been invited to deliver a lecture at the international WOCSDICE - EXMATEC 2025 conference, which will take place from 16 to 20 June 2025 in Cádiz, Spain. This joint event merges the 48th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) and the 19th Workshop on Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC) – two renowned conferences in the field of compound semiconductor materials and technologies. Professor Boćkowski will present an invited talk entitled “Shaping the Future of GaN Crystal Growth Technology”, highlighting IWC PAN's latest progress in gallium nitride (GaN) crystal growth and its applications in high-power electronics and wide bandgap technologies. Conference website: https://we2025.eu
From epitaxy to leadership - COST webinarFriday, 06 June 2025 13:25 |
European Network for Innovative and Advanced Epitaxy - OPERA COST Action CA20116 - invites to a webinar From epitaxy to leadership - a woman’s path in science of semiconductors that will be given by prof. Evelyne GIL from Université Clermont Auvergne in France on June 18, 2025 at 2 pm (GMT+1, Poland time) on-line via Zoom platform. Abstract and speaker biography are avaialble under this link.
High-Tc iron-based superconductors by spark plasma sintering techniqueMonday, 02 June 2025 13:12 |
In the recent study, Prof. Singh’s research team has investigated the effect of “spark plasma sintering (SPS)” process on the superconducting properties of iron-based superconductors in collaboration with Shibaura Institute of Technology (SIT), Japan. They have also conducted a comparative analysis of conventional, high-gas-pressure, and SPS techniques to understand their impact on superconducting properties. Interestingly, the SPS process increased the critical current density without significantly affecting the critical transition temperature, which is attributed to the enhanced density of the samples. More details about this study can be found in the published paper by: Mohammad Azam, Tatiana Zajarniuk, Konrad Kwatek, Paolo Mele, and Shiv J. Singh entitled “Effect of spark plasma sintering on the superconducting properties of Sm-based oxypnictide” Cryogenics 150, 104125 (2025) (Elsevier); https://doi.org/10.1016/j.cryogenics.2025.104125
Figure: The variations of (a) the onset transition temperature (Tconset), (b) the transition width (ΔT), (c) the room temperature resistivity (ρ300 K), (d) the Residual Resistance Ratio (RRR = ρ300 K / ρ60 K), and (e) the critical current density (Jc) of different SmFeAsO0.80F0.20 bulks prepared by conventional (0 MPa), high gas pressure (500 MPa) and SPS (45 MPa) processes under the different growth pressures. |
Invited lecture at ION 2025 conferenceSunday, 08 June 2025 13:40 |
Professor Michał Boćkowski, Director of IWC PAN, has been invited to give an invited lecture at the ION 2025 – Ion Implantation and Other Applications of Ions and Electrons conference, which will take place from 24 to 26 June 2025 in Lublin, Poland, organized by Maria Curie-Skłodowska University and Lublin University of Technology. The title of his talk is: “Shaping the Future of GaN-on-GaN Technology”. The lecture will focus on the development of advanced GaN-on-GaN structures and their potential in high-power and high-frequency applications. Conference website: https://ion.umcs.pl
IHPP PAS Seminar on Nitride SemiconductorsFriday, 06 June 2025 13:46 |
Dear Colleagues, We are pleased to invite you to the next IHPP PAS Seminar on Nitride Semiconductors. The talk will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ). The talk is scheduled on Friday 13.06.2025 at 15:00 CEST. Speaker: Prof. Huili Grace Xing (Cornell University, Ithaca, USA) Title: 2D Hole Gas at GaN/AlN interface – an Unprecedented Platform to Probe the Valence Band of GaN Abstract: Link Sincerely, Tadeusz Suski
Two OPUS and one SONATA project granted by NCN for Unipress scientistsMonday, 02 June 2025 13:28 |
We are pleased to announce that the National Science Centre (NCN) has published the results of the OPUS 28 and SONATA 20 competitions, where scientists from the Institute of High Pressure Physics PAS have received funding for three projects. The winners are:
Congratulations!
FENG project for GaN/AlGaN/SiC structuresSunday, 11 May 2025 15:01 |
The National Center for Research and Development (NCBiR) as the Intermediate Institution for Priority I FENG 2021 has completed the evaluation of projects submitted in the call no. FENG.01.01-IP.01-005/23 – SMART Path Projects implemented in consortia. The projects were applied for by consortia with or without the participation of a large enterprise. In the latter category, the first place in the ranking list of co-financed projects was taken by the project implemented in the consortium SEEN Semiconductors Sp. z o. o. and the group of Prof. Michał Leszczyński from the NL-12 Laboratory of Semiconductor Characterization. There are 51 projects (out of 566 applications) that received co-financing for the amount of PLN 686,870,078.42. Project Title: Conductive GaN/AlGaN/SiC structures for the construction of new generations of vertical electronic devices. Project acronym: "TranzGaN" The aim of the project is to develop a technology for the growth of a conductive AlGaN:Si buffer on SiC substrates using the MOVPE method. For this purpose, the flow of reagents, temperature, growth pressure and disorientation of SiC substrates will be optimized. The result of this is to prepare a buffer layer with good electrical conductivity and the lowest possible dislocation density in the GaN layer grown on this buffer. This will allow for the production of epitaxial structures of vertical devices such as CAVET transistors, p-i-n diodes or laser diodes, which will significantly expand the scientific experience of the Institute. Project value: PLN 4,455,429.57 European Funds contribution: PLN 3,752,662.00
|
Links |
