Project SPRInG
„Short Period Superlattices for Rational (In Ga)N”

Programme Description

The SPRInG Project is carried out in a frame of Horizon2020 Programme MARIE SKŁODOWSKA-CURIE ACTIONS Innovative Training Networks – European Industrial Doctorates (ITN-EID) H2020-MSCA-ITN-2014.

Project Goal

The scientific mission of the SPRInG project is to develop a novel (In,Ga)N alloy that offers completely new opportunities to tune bandgaps and piezoelectric fields in quantum structures for highly efficient optoelectronic devices. This novel “rational” (n InN/m GaN) alloy is based on short period superlattices that stack integer numbers of m (n) monolayers (MLs) of InN (GaN), i.e. heterostructures of pure InN MLs embedded in a GaN matrix. The development of fundamental knowledge on this rational (InN/GaN) alloy as established for other III-V compounds is envisioned as the base for such devices.

Dedicated www of the SPRInG Project

Research Team

Zespół badawczy projektu SPRInG:

prof. dr hab. Czesław Skierbiszewski
dr inż. Marcin Siekacz
dr inż. Marta Sawicka
mgr inż. Paweł Wolny

Torsten Ernst MSc

dr inż. Julita Smalc-Koziorowska


Projekt time framework: 2014-2019

Project results have been published in:

International Collaboration

SPRInG project is carried out by TopGaN Ltd. in consortium with Forschungsverbund Berlin e.V. (FvB), in particular two research institutes: Paul-Drude Institut für Festkorperelektronik (PDI) and Leibniz-Institut für Kristallzüchtung (IKZ).