List of book chapters

(last update 07.04.2021)

“MBE of III‐Nitride Heterostructures for Optoelectronic Devices” by C. Skierbiszewski, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski‐Szkudlarek, A. Feduniewicz‐Żmuda, P. Wolny, M. Sawicka, in book: ” Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics” ed. by Hajime Asahi, Yoshiji Horikoshi, 2019 John Wiley & Sons Ltd, Published: February 2019, Print ISBN: 9781119355014, Online ISBN: 9781119354987

“Laser Diodes Grown by Molecular Beam Epitaxy” by G. Muziol, H. Turski, M. Siekacz, M. Sawicka and C. Skierbiszewski, in Nitride Semiconductor Technology, Power Electronics and Optoelectronic Devices, edited by Fabrizio Roccaforte and Mike Leszczynski (2020) , Wiley – VCH Verlag GmbH &Co. KGaA, Weinheim, Germany, ISBN 978-3-527-34710-0

“InGaN laser diodes by plasma assisted molecular beam epitaxy”, C. Skierbiszewski, G. Muziol, H. Turski, M. Siekacz and M. Sawicka Handbook of Solid-State Lighting and LEDs, Edited by Zhe Chuan Feng, CRC Press Taylor and Francis Group 2017, ISBN 9781498741415 - CAT# K26740

"Nitride-Based Light-Emitting Diodes and Nitride-Based Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy", C. Skierbiszewski, Lattice Engineering: Technology and Applications, Edited by Shumin Wang, pp 355-385, Pan Stanford Publishing Pte. Ltd. 2012, ISBN 978-981-4316-29-3

"Experimental Studies of GaInNAs Conduction Band Structure”, C. Skierbiszewski, Dilute III-V Nitride Semiconductors and Material Systems, Physics and Technology, editor Ayse Erol, pp 123-161, Springer Series in Materials Science 105, Springer-Verlag Berlin Heidelberg 2008

"Laser diodes grown on gallium nitride substrates”, P. Perlin, M. Leszczyński, P. Prystawko, M. Boćkowski, I. Grzegory, C. Skierbiszewski, T. Suski , III- Nitride Devices and NanoEngineering, editor Zhe Chuan Feng, pp 223-252, Imperial College Press, London 2008

List of scientific publications

2023

  1. Bidirectional light-emitting diode as a visible light source driven by alternating current ,M. Żak, G. Muziol, M. Siekacz, A. Bercha, M. Hajdel, K. Nowakowski-Szkudlarek, A. Lachowski, M. Chlipała, P. Wolny, H. Turski, C. Skierbiszewski Published, Nat Commun 14, 7562 (2023) , doi.org/10.1038/s41467-023-43335-7

  2. The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI3/GaN interface E. Zdanowicz,AP. Herman, L. Przypis, K. Opolczynska, J. Serafinczuk, M. Chlipala, C. Skierbiszewski, R. Kudrawiec, HYSICAL CHEMISTRY CHEMICAL PHYSICS, DOI10.1039/d3cp00801k

  3. Nanostars in Highly Si-Doped GaN M, Sawicka,H. Turski, K. Sobczak,A. Feduniewicz-Zmuda, N. Fiuczek, O. Golyga, M. Siekacz, G. Muziol, G. Nowak, J. Smalc-Koziorowska, C. CRYSTAL GROWTH & DESIGN, DOI10.1021/acs.cgd.3c00317

  4. Transition between quantum confinement and bulklike behavior in polar quantum wells L. Uhlig; J. Tepass; M. Hajdel, G. Muziol, UT. Schwarz, PHYSICAL REVIEW B, DOI10.1103/PhysRevB.108.045304

  5. Long-Lived Excitations in Wide (In,Ga)N/GaN Quantum Wells, A. Bercha, G. Muziol, M. Chlipala, W. Trzeciakowski, PHYSICAL REVIEW APPLIED, DOI10.1103/PhysRevApplied.20.034040

  6. The dissociation of (a plus c) misfit dislocations at the InGaN/GaN interface J.Smalc-Koziorowska, J. Moneta; G. Muziol, W. Chrominski, R. Kernke, M. Albrecht, T. Schulz, I. Belabbas, JOURNAL OF MICROSCOPY, DOI10.1111/jmi.13234

  7. Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells J. Tepass, L. Uhlig, M. Hajdel, G. Muziol, UT. Schwarz, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, DOI10.1002/pssa.202300042

  8. Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In, Ga)N Quantum Wells P. Wolny, H. Turski, G. Muziol, M. Sawicka, J. Smalc-Koziorowska, J. Moneta, M. Hajdel, A. Feduniewicz-Żmuda, S. Grzanka, R. Kudrawiec, and C. Skierbiszewski Phys. Rev. Applied 19, 014044 – Published 17 January 2023 10.1103/PhysRevApplied.19.014044

  9. Fabrication of GaN-air channels for embedded photonic structure Marta Sawicka, Oliwia Gołyga, Natalia Fiuczek, Grzegorz Muzioł, Anna Feduniewicz-Żmuda, Marcin Siekacz, Henryk Turski, Robert Czernecki, Ewa Grzanka, Igor Prozheev, Filip Tuomisto, Czesław Skierbiszewski, Materials Science in Semiconductor Processing, Volume 155, 2023, 107234, ISSN 1369-8001, 10.1016/j.mssp.2022.107234

  10. Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells Tomm, J.W., Bercha, A., Muzioł, G., Piprek, J. and Trzeciakowski, W. (2023), Phys. Status Solidi RRL 2300027. doi.org/10.1002/pssr.202300027

  11. Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy 10.1364/OME.485588 doi.org/10.1364/OME.485588

  12. Evidence for “dark charge” from photoluminescence measurements in wide InGaN quantum wells A. Bercha, W. Trzeciakowski, G. Muziol, J. Tomm, and T. Suski, Opt. Express 31, 3227-3236 (2023) 10.1364/OE.480074

  13. Polarization Doping in a GaN-InN System—Ab Initio Simulation Ahmad, Ashfaq, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol, Eva Monroy, Agata Kaminska, and Stanislaw Krukowski. 2023. Materials 16, no. 3: 1227. 10.3390/ma16031227

2022

  1. Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides By: K. Oreszczuk, J. Slawinska, A. Rodek, M. Potemski, C. Skierbiszewski, P. Kossacki, Nanoscale 14(46): 17271-17276 (2022). Doi.org/10.1039/D2NR03970B

  2. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources by G. Muziol, M. Hajdel, M. Siekacz, H. Turski, K. Pieniak, A. Bercha, W. Trzeciakowski, R. Kudrawiec, T. Suski, and C. Skierbiszewski, Japanese Journal of Applied Physics, 61, Sa0801 [Doi:10.35848/1347-4065/ac3c1a] (https://iopscience.iop.org/article/10.35848/1347-4065/ac3c1a)

  3. Negative Magnetoresistivity in Highly Doped n-Type GaN By: L. Konczewicz, M. Iwinska, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, S. Juillaguet, S. Contreras, Materials, 15, 7069 Doi.org/10.3390/ma15207069

  4. Electrical transport properties of highly doped N-type GaN materials By: L. Konczewicz, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipała, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras, Semiconductor Science and Technology, 37, 055012 Doi. 10.1088/1361-6641/ac5e01

  5. Role of Metallic Adlayer in Limiting Ge Incorporation into GaN By: H. Turski, P. Wolny , M. Chlipala, M. Sawicka, A. Reszka, P. Kempisty, L. Konczewicz,G. Muziol, M. Siekacz, C. Skierbiszewski, Materials 2022, 15(17), 5929; DOI.org/10.3390/ma15175929

  6. Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes By: J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, G. Staszczak, and C. Skierbiszewski, Optics Express Vol. 30, Issue 15, pp. 27004-27014 (2022) Published July 2022 DOI.org/10.1364/OE.458950

  7. Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection By: N. Fiuczeka, M. Sawicka,A. Feduniewicz-Żmuda, M. Siekacz, M. Żak, K. Nowakowski-Szkudlarek, G. Muzioł, P. Wolny, J.J. Kelly, C. Skierbiszewskia, Acta Materialia 234(15):118018, Published May 2022 DOI.org/10.1016/j.actamat.2022.118018

  8. Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer By: M. Chlipała, .H. Turski, M. Żak, G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, N. Fiuczek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, C. Skierbiszewski, Appl. Phys. Lett. 120, 171104 (2022); Published April 2022, DOI.org/10.1063/5.0082297

  9. Electrically pumped blue laser diodes with nanoporous bottom cladding By: M. Sawicka, G. Muziol, N. Fiuczek, M. Hajdel, M. Siekacz, A. Feduniewicz-Żmuda, K. Nowakowski-Szkudlarek, P. Wolny, M. Żak, H. Turski, C. Skierbiszewski, Optics Express Vol. 30, Issue 7, pp. 10709-10722 (2022), Published February 2022 DOI.org/10.1364/OE.454359

  10. GaN-based bipolar cascade lasers with 25 nm wide quantum wells By: J. Piprek, G. Muziol, M.Siekacz, C. Skierbiszewski, OPTICAL AND QUANTUM ELECTRONICS Vol: 54 Issue: 1 Article Number62 Published JAN 2022 DOI10.1007/s11082-021-03455-0

  11. Material Gain in Polar GaInN and AlGaN Quantum Wells: How to Overcome the ‘Dead’ Width for Light Emitters in These QW Systems? Marta Gladysiewicz; Czesław Skierbiszewski; Robert Kudrawiec; IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 28, NO. 1, JANUARY/FEBRUARY 2022 https://ieeexplore.ieee.org/document/9546060

2021

  1. Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs By: M. Hajdel, M. Chlipala, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Zmuda, C. Skierbiszewski, G. Muziol, MATERIALS Vol: 15 Issue: 1 Article Number:237 Published 2021 DOI10.3390/ma15010237

  2. III-nitride optoelectronic devices containing wide quantum wells-unexpectedly efficient light sources By: G. Muziol, M. Hajdel, M. Siekacz, H. Turski, K. Pieniak, A. Bercha, W. Trzeciakowski, R. Kudrawiec, T. Suski, C. Skierbiszewski, JAPANESE JOURNAL OF APPLIED PHYSICS Vol:61 Issue:SA SupplementA Article NumberSA0801 Published 2021 DOI10.35848/1347-4065/ac3c1a

  3. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction By: K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S, Grzanka, C. Skierbiszewski, T. Suski OPTICS EXPRESS Vol: 29 Issue: 2, pp: 1824-1837 (2021) Publishde 18January 2021 doi: 10.1364/OE.415258

  4. Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices By: M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, and C. Skierbiszewski Phys. Rev. Applied 15, 024046 – Published 19 February 2021 doi.org/10.1103/PhysRevApplied.15.024046

  5. Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs By: K. Pieniak, W. Trzeciakowski, G. Muziol, A. Kafar, M. Siekacz, C. Skierbiszewski, T Suski, OPTICS EXPRESS Vol:29 Issue: 25 pp: 40804-40818 – Published DEC 6 2021 DOI10.1364/OE.441387

  6. Composition Inhomogeneity in Nonpolar (10(1)over-bar0) and Semipolar (20(2)over-bar1) InAIN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy By: M. Sawicka, J. Smalc-Koziorowska, M. Krysko, N. Fiuczek, P. Wolny, A. Feduniewicz-Zmuda, K. Nowakowski-Szkudlarek, H. Turski, C. Skierbiszewski, CRYSTAL GROWTH & DESIGN Vol: 21 Issue: 9 pp: 5223-5230 – Published SEP 1 2021 DOI10.1021/acs.cgd.1c00560

  7. Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects By: P. Tatarczak, H.Turski, KP. Korona, E. Grzanka, C. Skierbiszewski, A. Wysmolek, APPLIED SURFACE SCIENCE Vol: 566 Article Number 150734 – Published NOV 15 2021 DOI10.1016/j.apsusc.2021.150734

  8. GaN-based bipolar cascade laser exceeding 100% differential quantum efficiency By: J Piprek, M. Siekacz, G. Muziol, C. Skierbiszewski, Book Group Author: IEEE 2021 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), Book SeriesInternational Conference on Numerical Simulation of Optoelectronic Devices pp:75-76 Published 2021 DOI10.1109/NUSOD52207.2021.9541524

  9. Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs By: L.van Deurzen, MG. Ruiz, K Lee, T.Turski, S. Bharadwaj, R. Page, V. Protasenko, H. Xing, J.Lahnemann, D. Jena, JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol: 54 Issue 49 Article Number495106 Published DEC 9 2021 DOI10.1088/1361-6463/ac2446

  10. Free Excitonic Emission in Homoepitaxial Layers Grown on Bulk GaN Substrates By: P. Tatarczak, P H. Turski, A. Wysmolek, ACTA PHYSICA POLONICA A Vol: 139 Issue 3 pp: 300-303 Published MAR 2021 DOI10.12693/APhysPolA.139.300

  11. Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells By: J. Smalc-Koziorowska, E. Grzanka, A. Lachowski, R. Hrytsak, M. Grabowski, S. Grzanka, S. Kret, R. Czernecki, H. Turski, L. Marona, T. Markurt, T. Schulz, M. Albrecht, M. Leszczynski, ACS APPLIED MATERIALS & INTERFACES Vol: 13 Issue 6 pp: 7476-7484 Published FEB 17 2021 DOI10.1021/acsami.0c21293

  12. Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs By: A. Reszka, KP. Korona, S. Tiagulskyi, H. Turski, U. Jahn, S. Kret, R. Bozek, M. Sobanska, ZR. Zytkiewicz, BJ. Kowalski, ELECTRONICS Vol: 10 Issue 1 Article Number 45 Published JAN 2021 DOI10.3390/electronics10010045

2020

  1. Sensitivity of N-polar GaN surface barrier to ambient gases (vol 281, pg 561, 2019) By: L.Janicki, J. Misiewicz, M. Siekacz, H. Turski, J. Moneta, S. Gorantla, C. Skierbiszewski, R. Kudrawiec SENSORS AND ACTUATORS B-CHEMICAL, Volume: 309, Article Number: 127782, Published: APR 15 2020 10.1016/j.snb.2020.127782

  2. Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching By: M. Sawicka, N. Fiuczek, H. Turski, G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Zmuda, P. Wolny, C. Skierbiszewski, NANOSCALE, Volume: 12, Issue: 10, Pages: 6137-6143, Published: MAR 14 2020 10.1039/c9nr10968d

  3. Stacking faults in plastically relaxed InGaN epilayers By: J. Moneta, E. Grzanka,H. Turski, C. Skierbiszewski, J. Smalc-Koziorowska, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Volume: 35, Issue: 3, Article Number: 034003, Published: MAR 2020 10.1088/1361-6641/ab6bb1

  4. Hydrostatic pressure dependence of indirect and direct excitons in InGaN/GaN quantum wells By: G. Staszczak, W. Trzeciakowski, E. Monroy, A. Bercha, G. Muziol, C. Skierbiszewski, P. Perlin, T Suski, PHYSICAL REVIEW B, Volume: 101, Issue: 8, Article Number: 085306, Published: FEB 28 2020 10.1103/PhysRevB.101.085306

  5. Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes By: S. Bharadwaj, J. Miller, K. Lee, J. Lederman, M. Siekacz, HL. Xing, D. Jena, C. Skierbiszewski, H . Turski, OPTICS EXPRESS, Volume: 28, Issue: 4, Pages: 4489-4500, Published: FEB 17 2020 [10.1364/OE.384021] (https://www.osapublishing.org/oe/fulltext.cfm?uri=oe-28-4-4489&id=426518)

  6. Anomalous photocurrent in wide InGaN quantum wells By: A. Bercha, Artem, W. Trzeciakowski, G. Muziol, M. Siekacz, C. Skierbiszewski, OPTICS EXPRESS, Volume: 28, Issue: 4, Pages: 4717-4725 ,Published: FEB 17 2020 10.1364/OE.382646

  7. Gallium nitride tunneling field-effect transistors exploiting polarization fields By: A. Chaney, H. Turski, K. Nomoto, Z. Hu, J. Encomendero, S. Rouvimov, T. Orlova, P. Fay, A. Seabaugh, HLG. Xing, J. Debdeep APPLIED PHYSICS LETTERS, Volume: 116, Issue: 7, Article Number: 073502, Published: FEB 18 2020 10.1063/1.5132329

  8. Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells By: M. Jarema, M. Gladysiewicz, L. Janicki, E. Zdanowicz, H. Turski, G. Muziol, C. Skierbiszewski, R. Kudrawiec, JOURNAL OF APPLIED PHYSICS, Volume: 127, Issue: 3, Article Number: 035702, Published: JAN 21 2020 10.1063/1.5121368

  9. Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy By: M. Sawicka, N. Fiuczek, P. Wolny, A. Feduniewicz-Żmuda, M. Siekacz, M. Kryśko, K. Nowakowski-Szkudlarek, J. Smalc-Koziorowska, S. Kret, Ž. Gačević, E. Calleja, C. Skierbiszewski, Journal of Crystal Growth, 544 125720 (2020), 10.1016/j.jcrysgro.2020.125720

  10. III-N/Si₃N₄ Integrated Photonics Platform for Blue Wavelengths By: R. Arefin, S. H. Ramachandra, H. Jung, W. You, S. M. N. Hasan, H. Turski, S. Dwivedi, S. Arafin, IEEE Journal of Quantum Electronics, vol. 56, no. 4, 1-9, Aug. (2020),

2019

  1. Nitride LEDs and Lasers with Buried Tunnel Junctions, By H. Tursk, M. Siekacz, G. Muziol, M. Hajdel, S. Stanczyk, M. Zak, M. Chlipala, Cz. Skierbiszewski, S. Bharadwaj, HG. Xing, D. Jena, ECS Journal of Solid State Science and Technology, Volume: 9, Issue: 1, Article Number: 015018, Published: DEC 5 2019, DOI: 10.1149/2.0412001JSS,

  2. Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy, Hajdel, M.; Muziol, G. ; Nowakowski-Szkudlarek, K. ; Siekacz, M.; Feduniewicz-Zmuda, A., Wolny, P. , Skierbiszewski, C., Acta Physica Polonica A, Volume: 136, Issue: 4, Pages: 592-596, Published: OCT 2019, DOI: 10.12693/APhysPolA.136.593

  3. Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices By Muziol, G. ; Turski, H. ; Siekacz, M. ; Szkudlarek, K. ; Janicki, L. ; Baranowski, M. ; Zolud, S. ; Kudrawiec, R.; Suski, T. ; Skierbiszewski, C. ACS Photonics, Volume: 6, Issue: 8, Pages: 1963-1971, Published: AUG 2019, DOI: 10.1021/acsphotonics.9b00327

  4. Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE By: M. Siekacz, P. Wolny, T. Ernst, E. Grzanka, G. Staszczak, T. Suski, A. Feduniewicz-Żmuda, M. Sawicka, J. Moneta, M. Anikeeva, T. Schulz, M. Albrecht, and C. Skierbiszewski, Superlattices and Microstructures 133, 106209 Published: July 2019

  5. Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface By: H. Turski, F. Krzyżewski, A. Feduniewicz-Żmuda, P. Wolny, M. Siekacz, G. Muzioł, C. Cheze, K. Nowakowski-Szkudlarek, H. Xing, D. Jena, M. Załuska-Kotur, C. Skierbiszewski, Applied Surface Science 484, 771-780 Published: AUG 2019

  6. Optical properties of III-nitride laser diodes with wide InGaN quantum wells By: G. Muzioł, M. Hajdel, M. Siekacz, K. Nowakowski-Szkudlarek, S. Stańczyk, H. Turski, C. Skierbiszewski, Applied Physics Express 12, 072003 Published: JUNE 2019

  7. Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions By: H. Turski, S. Bharadwaj, H. Xing, D. Jena, Journal of Applied Physics 125, 203104 Published: MAY 2019

  8. Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE By: H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, A. Reszka, B. Kowalski, M. Krysko, P. Wolny, J. Smalc-Koziorowska, M. Siekacz, G. Muzioł, K. Nowakowski-Szkudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth 512, 208-212 Published: APR 2019

  9. Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy By: G. Muzioł, M. Siekacz, K. Nowakowski-Szkudlarek, M. Hajdel, J. Smalc-Koziorowska, A. Feduniewicz-Żmuda, E. Grzanka, P. Wolny, H. Turski, P. Wiśniewski, P. Perlin, C. Skierbiszewski, Materials Science in Semiconductor Processing 91, 387-391 Published: MAR 2019

  10. Depletion Layer Built-In Field at (1-100), (0001), and (000-1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting By: H. Stokowski, L. Janicki, J. Serafińczuk, M. Siekacz, C. Skierbiszewski, R. Kudrawiec, Advanced Materials Interfaces 6, 1801497 Published: FEB 2019

  11. Stack of two III-nitride laser diodes interconnected by a tunnel junction By: M. Siekacz, G. Muzioł, M. Hajdel, M. Żak, K. Nowakowski-Szkudlarek, H. Turski, M. Sawicka, P. Wolny, A. Feduniewicz-Żmuda, S. Stanczyk, J. Moneta, C. Skierbiszewski, Optics Express 27, 5784-5791 Published: FEB 2019

  12. Sensitivity of N-polar GaN surface barrier to ambient gases By: L. Janicki, J. Misiewicz, M. Siekacz, H. Turski, J. Moneta, S. Gorantla, C. Skierbiszewski, R. Kudrawiec, Sensors and Actuators B-Chemical 281, 561-567 Published: FEB 2019

2018

  1. Switching of exciton character in double InGaN/GaN quantum wells By: T. Suski, G. Staszczak, K.P. Korona, P. Lefebvre, E. Monroy, P.A. Dróżdż, G. Muzioł, C. Skierbiszewski, M. Kulczykowski, M. Matuszewski, E. Grzanka, S. Grzanka, K. Pieniak, K. Gibasiewicz, A. Khachapuridze, J. Smalc-Koziorowska, L. Marona, P. Perlin, Physical Review B 98, 165302 Published: OCT 2018

  2. Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices By: P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski, Journal of Applied Physics 124, 065701 Published: AUG 2018

  3. An effective method for antenna design in field effect transistor terahertz detectors By: BW. Zhang, W. Yan, ZF. Li, L. Bai, G. Cywiński, I. Yahniuk, K. Nowakowski-Szkudlarek, C. Skierbiszewski, J. Przybytek, DB. But, D. Coquillat, W. Knap, FH. Yang, Journal of Infrared and Milimeter Waves 37, 389-392 Published: AUG 2018

  4. Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application By: J. Moneta, M. Siekacz, E. Grzanka, T. Schulz, T. Markut, M. Albrecht, J. Smalc-Koziorowska, Applied Physics Letters 113, 031904 Published: JUL 2018

  5. Hydrogen diffusion in GaN:Mg and GaN:Si By: R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, M. Leszczyński, Journal of Alloys and Compounds 747, 354-358 Published: MAY 2018

  6. True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy By: C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, Applied Physics Express 11, 034103 Published: MAR 2018

  7. Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications By: G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, GS. Simin, SL. Rumyantsev, Applied Physics Letters 112, 133502 Published: MAR 2018

  8. Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE By: H. Turski, G. Muzioł, M. Siekacz, P. Wolny, K. Nowakowski-Szkudlarek, A. Fedunniewicz-Żmuda, K. Dybko, C. Skierbiszewski, Journal of Crystal Growth 482, 56-60 Published: JAN 2018

  9. Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 degrees C By: C. Cheze, F. Feix, J. Lahnemann, T. Flissikowski, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski, O. Brandt, Applied Physics Letters 112, 022102 Published: JAN 2018

  10. Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells By: L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Cheze, M. Siekacz, XQ. Wang, M. Albrecht, J. Neugebauer, Physical Review Materials 2, 011601 Published: JAN 2018

2017

  1. Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties G. Muzioł, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, C. Skierbiszewski, Optics Express 25, 33113-33121 Published: DEC 25 2017

  2. Influence of the growth method on degradation of InGaN laser diodes A. Bojarska, G. Muzioł, C. Skierbiszewski, E. Grzanka, P. Wiśniewski, I. Makarowa, R. Czernecki, T. Suski, P. Perlin, Appllied Physics Express 10, 091001 Published: SEP 2017

  3. Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy G. Staszczak, I. Gorczyca, E. Grzanka, J. Smalc‐Koziorowska, G. Targowski, R. Czernecki, M. Siekacz, S. Grzanka, C. Skierbiszewski, T. Schulz, N. E. Christensen, T. Suski, Physica Status Solidi B 254, 1600710 Published: AUG 2017

  4. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range R. Kucharski, L. Janicki, M. Zając, M. Wełna, M. Motyka, C. Skierbiszewski, R. Kudrawiec, Crystals 7, 187 Published: JUL 2017

  5. Comparative study of semipolar (20(2)over-bar1), nonpolar (10(1)over-bar0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy By: M. Sawicka, P. Wolny, M. Krysko, H. Turski, K. Szkudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth 465, 43-47 Published: MAY 1 2017

  6. Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy By: M. Sawicka, A. Feduniewicz-Żmuda, M. Kryśko, H. Turski, G. Muziol, M. Siekacz, P. Wolny, C. Skierbiszewski, Journal of Crystal Growth 459, 129-134 Published: FEB 1 2017

  7. Miscut dependent surface evolution in the process of N-polar GaN (000(1)over-bar) growth under N-rich condition By: Krzyzewski, F.; Zaluska-Kotur, M.A.; Turski, H. ; Sawicka, M.; Skierbiszewski, C. JOURNAL OF CRYSTAL GROWTH Volume: 457, Pages: 38-45, Special Issue: SI Published: JAN 1 2017

2016

  1. HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut (TM) By: Iwinska, M.; Amilusik, M.; Fijalkowski, M.; Sochacki, T.; Lucznik, B.; Grzanka, E.; Litwin-Staszewska, E.; Weyher, J. L.; Nowakowska- Siwinska, A.; Muziol, G.; Skierbiszewski, C.; Grzegory, I.; Guiot, E.; Caulmilone, R.; Bockowski, M. JOURNAL OF CRYSTAL GROWTH Volume: 456, Pages: 73-79 Published: DEC 15 2016

  2. A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations By: Drozdz, P. A.; Korona, K. P.; Sarzynski, M.; Czernecki, R.; Skierbiszewski, C.; Muziol, G.; Suski, T. ACTA PHYSICA POLONICA A Volume: 130, Issue: 5, Pages: 1209-1212 Published: NOV 2016

  3. Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices By: Cheze, C.; Siekacz, M.; Isa, F.; Jenichen, B.; Feix, F.; Buller, J.; Schulz, T.; Albrecht, M.; Skierbiszewski, C.; Calarco, R., Riechert, H. JOURNAL OF APPLIED PHYSICS Volume: 120, Issue: 12, Article Number: 125307 Published: SEP 28 2016

  4. Comparison of the Luminous Efficiencies of Ga- and N-Polar InxGa1-xN/InyGa1-yN Quantum Wells Grown by Plasma- Assisted Molecular Beam Epitaxy By: Fernandez-Garrido, S.; Laehnemann, J.; Hauswald, C.; Korytov, M.; Albrecht, M.; Cheze, C.; Skierbiszewski, C.; Brandt, O. PHYSICAL REVIEW APPLIED Volume: 6, Issue: 3, Article Number: 034017 Published: SEP 27 2016

  5. Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays By: Szkudlarek, K.; Sypek, M.; Cywinski, G.; Suszek, J.; Zagrajek, P.; Feduniewicz-Zmuda, A.; Yahniuk, I.1; Yatsunenko, S.; Nowakowska- Siwinska, A.; Coquillat, D.; But, Dmytro B.; Rachon, M.; Wegrzynska, K.; Skierbiszewski, C.; Knap, W. OPTICS EXPRESS Volume: 24, Issue: 18, Pages: 20119-20131 Published: SEP 5 2016

  6. Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide By: Muziol, G.; Turski, H.; Siekacz, M.; Grzanka, S.; Perlin, P.; Skierbiszewski, C. APPLIED PHYSICS EXPRESS Volume: 9, Issue: 9, Article Number: 092103 Published: SEP 2016

  7. Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes By: Cywinski, G.; Szkudlarek, K.; Kruszewski, P.; Yahniuk, I.; Yatsunenko, S.; Muziol, G.; Skierbiszewski, C.; Knap, W.; Rumyantsev, S.L. APPLIED PHYSICS LETTERS Volume: 109, Issue: 3, Article Number: 033502 Published: JUL 18 2016

  8. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N By: Borysiuk, J.; Sakowski, K.; Drozdz, P.; Korona, K. P.; Sobczak, K.; Muziol, G.; Skierbiszewski, C.; Kaminska, A.; Krukowski, S. JOURNAL OF APPLIED PHYSICS Volume: 120, Issue: 1, Article Number: 015702 Published: JUL 7 2016

  9. Surface Leakage Currents in SiN and Al2O3 Passivated AlGaN/GaN High Electron Mobility Transistors By: Bai, L.; Yan, W.; Li, Z.-F.; Yang, X.; Zhang, B.-W.; Tian, L.-X.; Zhang, F.; Cywinski, G.; Szkudlarek, K.; Skierbiszewski, C.; Knap, W.; Yang, F.-H. CHINESE PHYSICS LETTERS Volume: 33, Issue: 6, Article Number: 067201 Published: JUN 2016

  10. Strain relaxation in semipolar (20(2)over-bar1) InGaN grown by plasma assisted molecular beam epitaxy By: Sawicka, M.; Krysko, M.; Muziol, G.; Turski, H.; Siekacz, M.; Wolny, P.; Smalc-Koziorowska, J.; Skierbiszewski, C. JOURNAL OF APPLIED PHYSICS Volume: 119, Issue: 18, Article Number: 185701 Published: MAY 14 2016

  11. Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient By: Janicki, L.; Ramirez-Lopez, M.; Misiewicz, J.; Cywinski, G.; Bockowski, M.; Muziol, G.; Chesze, C.; Sawicka, M.; Skierbiszewski, C.; Kudrawiec, R. JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 55, Issue: 5, Special Issue: SI, Article Number: 05FA08 Published: MAY 2016

  12. MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications By: Cywinski, G.; Szkudlarek, K.; Kruszewski, P.; Yahniuk, I.; Yatsunenko, S.; Muziol, G.; Siekacz, M.; Skierbiszewski, C.; Rumyantsev, S.;Knap, W. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 34, Issue: 2, Article Number: 02L118 Published: MAR 2016

  13. Surface potential barrier in m-plane GaN studied by contactless electroreflectance By: Janicki, L.; Misiewicz, J.; Cywinski, G.; Sawicka, M.; Skierbiszewski, C.; Kudrawiec, R. APPLIED PHYSICS EXPRESS Volume: 9, Issue: 2, Article Number: 021002 Published: FEB 2016

  14. GaN/AIGaN Based Transistors for Terahertz Emitters and Detectors By: Cywinski, G.; Szkudlarek, K.; Yahniuk, I.; Yatsunenko, S.; Siekacz, M.; Skierbiszewski, C.; Knap, W.; But, D.B.; Coquillat, D.;Dyakonova, N.; Knap, W. Book Group Author(s): IEEE Edited by: Rydosz, A.

  15. GaN/AlGaN Lateral Schottky Barrier Diodes for High Frequency Applications By: Cywinski, G.; Szkudlarek, K.; Yahniuk, I.; Yatsunenko, S.; Kruszewski, P.; Muziol, G.; Skierbiszewski, C.; Knap, W.; Rumyantsev, S.; But, D.; Knap, W. Book Group Author(s): IEEE Edited by:Rydosz, A 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON) Published: 2016

  16. Aluminum free nitride laser diodes grown by plasma assisted MBE By: Skierbiszewski, C.; Muziol, G. Turski, H.; Siekacz, M. Book Group Author(s): IEEE 2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) Published: 2016

  17. Lateral Schottky Barrier Diodes Based on GaN/AlGaN 2DEG for sub-THz Detection By: Cywinski, G.; Yahniuk, I.; Szkudlarek, K.; Kruszewski, P.; Yatsunenko, S.; Muziol, G.; Skierbiszewski, C.; But, D.; Knap, W. Edited by:Napieralski, A PROCEEDINGS OF THE 23RD INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2016) Pages: 346-349 Published: 2016

2015

  1. Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures By: Gladysiewicz, M.; Janicki, L.; Siekacz, M.; Cywinski, G.; Skierbiszewski, C., Kudrawiec, R. APPLIED PHYSICS LETTERS Volume: 107, Issue: 26, Article Number: 262107 Published: DEC 28 2015

  2. AlGaN/GaN HEMT's photoresponse to high intensity THz radiation By:Dyakonova, N.; But, D. B.; Coquillat, D.; Knap, W.; Drexler, C.; Olbrich, P.; Karch, J.; Schafberger, M.; Ganichev, S. D.; Ducournau, G.; Gaquiere, C.; Poisson, M. -A.; Delage, S.; Cywinski, G.; Skierbiszewski, C. OPTO-ELECTRONICS REVIEW Volume: 23, Issue: 3, Pages: 195-199 Published: SEP 2015

  3. High power nitride laser diodes grown by plasma assisted molecular beam epitaxy By: Muziol, G.; Siekacz, M.; Turski, H.; Wolny, P.; Grzanka, S.; Grzanka, E.; Feduniewicz-Zmuda, A.; Borysiuk, J.; Sobczak, K.; Domagala, J.; Nowakowska-Siwinska, A.; Makarowa, I.; Perlin, P.; Skierbiszewski, C. JOURNAL OF CRYSTAL GROWTH Volume: 425, Pages: 398-400 Published: SEP 1 2015

  4. Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes By: Baranowski, M.; Kudrawiec, R.; Misiewicz, J.; Turski, H.; Skierbiszewski, C. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Volume: 252, Issue: 5, Pages: 983-988, Special Issue: SI Published: MAY 2015

  5. Corrigendum to growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions (vol 377C, pg 184, 2013) By: Sawicka, M.; Cheze, C.; Turski, H.; Smalc-Koziorowska, J.; Krysko, M.; Kret, S.; Remmele, T.; Albrecht, M.; Cywinski, G.; Grzegory, I.; Skierbiszewski, C. JOURNAL OF CRYSTAL GROWTH Volume: 415, Pages: 176-176, Published: APR 1 2015

  6. Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy. By: Muziol, G.; Turski, H.; Siekacz, M.; Wolny, P.; Grzanka, S.; Grzanka, E.; Perlin, P.; Skierbiszewski, C. APPLIED PHYSICS EXPRESS Volume: 8, Issue: 3, Article Number: 032103 Published: MAR 2015

2014

  1. Erratum: Semipolar (20(2)over-bar1) GaN laser diodes operating at 388nm grown by plasma-assisted molecular beam epitaxy By: Sawicka, M.; Muziol, G.; Turski, H.; Feduniewicz-Zmuda, A.; Krysko, M.; Grzanka, S.; Grzanka, E., Smalc-Koziorowska, J.; Albrecht, M.; Kucharski, R.; Perlin, P.; Skierbiszewski, C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 32, Issue: 5, Article Number: 053401 Published: SEP 2014

  2. Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region By: Gladysiewicz, M.; Kudrawiec, R.; Syperek, M; Misiewicz, J.; Siekacz, M.; Cywinski, G.; Khachapuridze, A.; Suski, T.; Skierbiszewski, C. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 115, Issue: 3, Pages: 1015-1023 Published: JUN 2014

  3. Publlisher's Note: Ultraviolet laser diodes grown on semipolar (20(2)over-bar1) GaN substrates by plasma-assisted molecular beam epitaxy By: Sawicka, M.; Muziol, G.; Turski, H.; Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Weyher, J. L.; Cheze, C.; Albrecht, M.;Kucharski, R.; Perlin, P.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 104, Issue: 21, Article Number: 219901 Published: MAY 26 2014

  4. Ultraviolet light-emitting diodes grown by plasma- assisted molecular beam epitaxy on semipolar GaN (2021) substrates By: Sawicka, M.; Cheze, C.; Turski, H.; Muziol, G.; Grzanka, S.; Hauswald, C.; Brandt, O.; Siekacz, M.; Kucharski, R.; Remmele, T.; Albrecht, M.; Krysko, M.; Grzanka, E.; Sochacki, T.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 104, Issue: 20, Article Number: 209902 Published: MAY 19 2014

  5. Publisher's note: Cyan laser diode grown by plasma-assisted molecular beam epitaxy By: Turski, H.; Muziol, G.; Wolny, P.; Grzanka, S.; Cywinski, G.; Sawicka, M.; Perlin, P.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 104, Issue: 20, Article Number: 209901 Published: MAY 19 2014

  6. Semipolar (20(2)over-bar1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy By: Sawicka, M.; Muziol, G.; Turski, H.; Feduniewicz-Zmuda, A.; Krysko, M.; Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Albrecht, M.; Kucharski, R.; Perlin, P.; Skierbiszewski, C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 32, Issue: 2, Article Number: 02C115 Published: MAR 2014

  7. AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy By: Skierbiszewski, C.; Turski, H.; Muziol, G,; Wolny, P.; Cywinski, G.; Grzanka, S.; Smalc-Koziorowska, J.; Sawicka, M.; Perlin, P.; Wasilewski, Zbig R.; Porowski, S, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 32, Issue: 2, Article Number: 02C112 Published: MAR 2014

  8. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy By: Skierbiszewski, C.; Turski, H.; Muziol, G.; Siekacz, M.; Sawicka, M.; Cywinski, G.; Wasilewski, Z. R.; Porowski, S. JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 47, Issue: 7, Article Number: 073001 Published: FEB 19 2014

  9. Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging By: Schulz, T.; Duff, A.; Remmele, T.; Korytov, M.; Markurt, T.; Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Cheze, C.; Skierbiszewski, C. JOURNAL OF APPLIED PHYSICS Volume: 115, Issue: 3, Article Number: 033113 Published: JAN 21 2014

  10. Cyan laser diode grown by plasma-assisted molecular beam epitaxy By: Turski, H.; Muziol, G.; Wolny, P.; Grzanka, S.; Cywinski, G.; Sawicka, M.; Perlin, P.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 104, Issue: 2, Article Number: 023503 Published: JAN 13 2014

  11. True-blue laser diodes grown by plasma-assisted MBE on bulk GaN substrates By: Muziol, G.; Turski, H.; Siekacz, M.; Wolny, P.; Sawicka, M.; Grzanka, S.; Perlin, P.; Suski, T.; Wasilewski, Z. R.; Grzegory, I.; Porowski, S.; Skierbiszewski, C. Edited by: Eddy, CR; Kuball, M; Koleske, DD; Amano, H PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 11, Issue: 3-4, Pages: 666-669 Published: 2014

2013

  1. MBE fabrication of III-N-based laser diodes and its development to industrial system By: Skierbiszewski, C.; Siekacz, M.; Turski, H.; Muziol, G.; Sawicka, M.; Perlin, P.; Wasilewski, Z. R.; Porowski, S. JOURNAL OF CRYSTAL GROWTH Volume: 378, Pages: 278-282, Published: SEP 1 2013

  2. Growth mechanisms in semipolar (2 0 (2)over-bar 1) and nonpolar m-plane (1 0 (1)over-bar 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions By: Sawicka, M.; Cheze, C.; Turski, H.; Smalc-Koziorowska, J.; Krysko, M.; Kret, S.; Remmele, T.; Albrecht, M.; Cywinski, G.; Grzegory, I.; Skierbiszewski, C. JOURNAL OF CRYSTAL GROWTH Volume: 377, Pages: 184-191 Published: AUG 15 2013

  3. Step-flow growth mode instability of N-polar GaN under N-excess By: Cheze, C.; Sawicka, M.; Siekacz, M.; Turski, H.; Cywinski, G.; Smalc-Koziorowska, J.; Weyher, J. L.; Krysko, M.; Lucznik, B.; Bockowski, M.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 103, Issue: 7, Article Number: 071601 Published: AUG 12 2013

  4. Determination of gain in AlGaN cladding free nitride laser diodes By: Muziol, G.; Turski, H.; Siekacz, M.; Sawicka, M.; Wolny, P.; Perlin, P.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 103, Issue: 6, Article Number: 061102 Published: AUG 5 2013

  5. Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy By: Turski, H.; Siekacz, M.; Sawicka, M.; Wasilewski, Z. R.; Porowski, S.; Skierbiszewski, C. JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52, Issue: 8, ,Part: 2, Special Issue: SI Article Number: UNSP 08JE02 Published: AUG 2013

  6. Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy By: Kudrawiec, R.; Janicki, L.; Gladysiewicz, M.; Misiewicz, J.; Cywinski, G.; Bockowski, M.; Muziol, G.; Cheze, C.; Sawicka, M.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 103, Issue: 5, Article Number: 052107 Published: JUL 29 2013

  7. Ultraviolet laser diodes grown on semipolar (20(2)over-bar1) GaN substrates by plasma-assisted molecular beam epitaxy By: Sawicka, M.; Muziol, G.; Turski, H.; Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Weyher, J. L.; Cheze, C.; Albrecht, M.; Kucharski, R.; Perlin, P.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 102, Issue: 25, Article Number: 251101 Published: JUN 24 2013

  8. Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells By: Cheze, C.; Siekacz, M.; Muziol, G.; Turski, H.; Grzanka, S.; Krysko, M.; Weyher, J.; Bockowski, M.; Hauswald, C.; Laehnemann, J.; Brandt, O.; Albrecht, M.; Skierbiszewski, C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 31, Issue: 3, Article Number: 03C130 Published: MAY 2013

  9. Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy By: Cywinski, G.; Kudrawiec, R.; Janicki, L.; Misiewicz, J.; Cheze, C.; Siekacz, M.; Sawicka, M.; Wolny, P.; Bockowski, M.; Skierbiszewski, C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 31, Issue: 3, Article Number: 03C112 Published: MAY 2013

  10. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (20(2)over- bar1) substrates By: Sawicka, M.; Cheze, C.; Turski, H.; Muziol, G.; Grzanka, S.; Hauswald, C.; Brandt, O.; Siekacz, M.; Kucharski, R.; Remmele, T.; Albrecht, M.; Krysko, M.; Grzanka, E.; Sochacki, T.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 102, Issue: 11, Article Number: 111107 Published: MAR 18 2013

  11. Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers By: Turski, H.; Siekacz, M.; Wasilewski, Z. R.; Sawicka, M.; Porowski, S.; Skierbiszewski, C. JOURNAL OF CRYSTAL GROWTH Volume: 367, Pages: 115-121 Published: MAR 15 2013

  12. Nitride-Based Light-Emitting Diodes and Nitride-Based Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy By: Skierbiszewski, Czeslaw Edited by: Wang, S LATTICE ENGINEERING: TECHNOLOGY AND APPLICATIONS Pages: 355-385, Published: 2013

  13. Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy By: Turski, H.; Siekacz, M.; Sawicka, M.; Wasilewski, Z. R.; Porowski, S.; Skierbiszewski, C. Edited by:Chyi, JI; Nanishi, Y; Morkoc, H; Piprek, J; Yoon, E; Fujioka, H GALLIUM NITRIDE MATERIALS AND DEVICES VIII Book Series: Proceedings of SPIE Volume: 8625, Article Number: UNSP 862527 Published: 2013

  14. True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates By: Turski, H.; Siekacz, M.; Muziol, G.; Sawicka, M.; Grzanka, S.; Perlin, P.; Suski, T.; Wasilewski, Z. R.; Grzegory, I.; Porowski, S.; Skierbiszewski, C. Edited by:Chyi, JI; Nanishi, Y; Morkoc, H; Piprek, J; Yoon, E; Fujioka, H GALLIUM NITRIDE MATERIALS AND DEVICES VIII Book Series: Proceedings of SPIE Volume: 8625, Article Number: 862512 Published: 2013

2012

  1. Electrostatic Gates for GaN/AlGaN Quantum Point Contacts By: Czapkiewicz, M.; Cywinski, G.; Dybko, K.; Siekacz, M.; Wolny, P.; Gieraltowska, S.; Guziewicz, E.; Skierbiszewski, C.; Wrobel, J. ACTA PHYSICA POLONICA A Volume: 122, Issue: 6, Pages: 1026-1028 Published: DEC 2012

  2. Waveguide Design for Long Wavelength InGaN Based Laser Diodes By: Muziol, G.; Turski, H.; Siekacz, M.; Sawicka, M.; Wolny, P.; Cheze, C.; Cywinski, G.; Perlin, P.; Skierbiszewski, C. ACTA PHYSICA POLONICA A Volume: 122, Issue: 6, Pages: 1031-1033 Published: DEC 2012

  3. True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy By: Skierbiszewski, C.; Siekacz, M.; Turski, H.; Muziol, G.; Sawicka, M.; Wolny, P.; Cywinski, G.; Marona, L.; Perlin, P.; Wisniewski, P.; Albrecht, M.; Wasilewski, Z. R.; Porowski, S. APPLIED PHYSICS EXPRESS Volume: 5, Issue: 11, Article Number: 112103 Published: NOV 2012

  4. Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy By: Kudrawiec, R.; Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Cywinski, G.; Cheze, C.; Wolny, P.; Prystawko, P.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 100, Issue: 18, Article Number: 181603 Published: APR 30 2012

  5. InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE By: Skierbiszewski, C.; Siekacz, M.; Turski, H.; Muziol, G.; Sawicka, M.; Feduniewicz-Zmuda, A.; Smalc-Koziorowska, J.; Perlin, P.; Grzanka, S.; Wasilewski, Z. R.; Kucharski, R.; Porowski, S. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 30, Issue: 2, Article Number: 02B102 Published: MAR 2012

  6. AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy By: Skierbiszewski, C.; Siekacz, M.; Turski, H.; Muziol, G.; Sawicka, M.; Feduniewicz-Zmuda, A.; Cywinski, G.; Cheze, C.; Grzanka, S.; Perlin, P.; Wisniewski, P.; Wasilewski, Z. R.; Porowski, S. APPLIED PHYSICS EXPRESS Volume: 5, Issue: 2, Article Number: 022104 Published: FEB 2012

  7. Electromodulation spectroscopy of optical transitions and electric field distribution in GaN/AlGaN/GaN transistor heterostructures with various AlGaN layer thicknesses By: Kudrawiec, R.; Gladysiewicz, M.; Misiewicz, J.; Siekacz, M.; Cywinski, G.; Wolny, P.; Skierbiszewski, C. Edited by: Parbrook, PJ; Martin, RW; Halsall, MP PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 9, Issue: 3-4, Pages: 1092-1095 Published: 2012

2011

  1. Proceedings of the 40th "Jaszowiec" International School and Conference on the Physics of Semiconductors, Krynica- Zdroj 2011 Preface By: Skierbiszewski, C.; Cywinski, L. ACTA PHYSICA POLONICA A Volume: 120, Issue: 5, Pages: 817-817 Published: NOV 2011

  2. Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy By: Krawczyk, M.; Lisowski, W.; Sobczak, J.; Kosinski, A.; Jablonski, A.; Skierbiszewski, C.; Siekacz, M.; Wiazkowska, S.] JOURNAL OF ALLOYS AND COMPOUNDS Volume: 509, Issue: 40, Pages: 9565-9571 Published: OCT 6 2011

  3. Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy By: Siekacz, M.; Sawicka, M.; Turski, H.; Cywinski, G.; Khachapuridze, A.; Perlin, P.; Suski, T.; Bockowski, M.; Smalc-Koziorowska, J.; Krysko, M.; Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Wasilewski, Z.; Porowski, S.; Skierbiszewski, C. JOURNAL OF APPLIED PHYSICS Volume: 110, Issue: 6, Article Number: 063110 Published: SEP 15 2011

  4. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates By: Smalc-Koziorowska, J.; Sawicka, M.; Remmele, T.; Skierbiszewski, C.; Grzegory, I.; Albrecht, M. APPLIED PHYSICS LETTERS Volume: 99, Issue: 6, Article Number: 061901 Published: AUG 8 2011

  5. Electron spin resonance and Rashba field in GaN-based materials By: Wolos, A.; Wilamowski, Z.; Skierbiszewski, C.; Drabinska, A.; Lucznik, B.; Grzegory, I.; Porowski, S. PHYSICA B-CONDENSED MATTER Volume: 406, Issue: 13, Pages: 2548-2554 Published: JUL 1 2011

  6. Step-flow anisotropy of the m-plane GaN (1(1)over-bar00) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy By: Sawicka, M.; Turski, H.; Siekacz, M.; Smalc-Koziorowska, J.; Krysko, M.; Dziecielewski, I.; Grzegory, I.; Skierbiszewski, C. PHYSICAL REVIEW B Volume: 83, Issue: 24, Article Number: 245434 Published: JUN 27 2011

  7. The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures By: Gladysiewicz, M.; Kudrawiec, R.; Misiewicz, J.; Cywinski, G.; Siekacz, M.; Wolny, P.; Skierbiszewski, C. APPLIED PHYSICS LETTERS Volume: 98, Issue: 23, Article Number: 231902 Published: JUN 6 2011

  8. High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy By: Sawicka, M.; Feduniewicz-Zmuda, A.; Turski, H.; Siekacz, M.; Grzanka, S.; Krysko, M.; Dziecielewski, I.; Grzegory, I.; Skierbiszewski, C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 29, Issue: 3, Article Number: 03C135 Published: MAY 2011

  9. Growth mechanism of InGaN by plasma assisted molecular beam epitaxy By: Turski, H.; Siekacz, M.; Sawicka, M.; Cywinski, G.; Krysko, M.; Grzanka, S.; Smalc-Koziorowska, J.; Grzegory, I.; Porowski, S.; Wasilewski, Z. R.; Skierbiszewski, C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 29, Issue: 3, Article Number: 03C136 Published: MAY 2011

  10. Theoretical simulations of radiative recombination time in polar InGaN quantum wells By: Gladysiewicz, M.; Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Siekacz, M.; Cywinski, G.; Skierbiszewski, C.; Suski, T. Book Author(s): Wetzel, C; Khan, A PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 8, Issue: 7-8 Published: 2011

  11. Broadening of interband transitions in InGaN quantum wells By: Gladysiewicz, M.; Kudrawiec, R.; Misiewicz, J.; Siekacz, M.; Cywinski, G.; Skierbiszewski, C. Book Author(s): Wetzel, C; Khan, A PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 8, Issue: 7-8 Published: 2011

  12. InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy By: Skierbiszewski, C.; Siekacz, M.; Turski, H.; Sawicka, M.; Feduniewicz-Zmuda, A.; Perlin, P.; Suski, T.; Wasilewski, Z.; Grzegory, I.; Porowski, S. LITHUANIAN JOURNAL OF PHYSICS Volume: 51, Issue: 4, Pages: 276-282 Published: 2011

  13. Plasmonic cladding InGaN MQW laser diodes By: Perlin, P.; Holc, K.; Sarzynski, M.; Leszczynski, M.; Czernecki, R.; Marona, L.; Wisniewski, P.; Cywinski, G.; Skierbiszewski, C.; Bockowski, M.; Grzegory, I, Suski, T. Edited by: Belyanin, AA; Smowton, PM NOVEL IN-PLANE SEMICONDUCTOR LASERS X Book Series: Proceedings of SPIE Volume: 7953, Article Number: UNSP 79530I

2010

  1. Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells By: Gladysiewicz, M.; Kudrawiec, R.; Misiewicz, J.; Cywinski, G.; Siekacz, M.; Skierbiszewski, C. JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 43, Issue: 19, Article Number: 195101 Published: MAY 19 2010

  2. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources By: El Fatimy, A.; Dyakonova, N.; Meziani, Y.; Otsuji, T.; Knap, W.; Vandenbrouk, S.; Madjour, K.; Theron, D.; Gaquiere, C.; Poisson, M. A.; Delage, S.; Prystawko, P.; Skierbiszewski, C. JOURNAL OF APPLIED PHYSICS Volume: 107, Issue: 2, Article Number: 024504 Published: JAN 15 2010

  3. TEM investigation of a processed InGaN based laser grown by PAMBE on bulk GaN substrate By: Kret, S.; Ivaldi, F.; Zak, M.; Feduniewicz-Zmuda, A.; Siekacz, M.; Cywinski, G.; Skierbiszewski, C. Edited by: Stutzmann, M; Hildebrandt, S PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 5 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 7, Issue: 5, Pages: 1325-1328 Published: 2010

2009

  1. Contactless electroreflectance of InGaN layers with indium content < 36%: The surface band bending, band gap bowing, and Stokes shift issues By: Kudrawiec, R.; Siekacz, M.; Krysko, M.; Cywinski, G.; Misiewicz, J.; Skierbiszewski, C. JOURNAL OF APPLIED PHYSICS Volume: 106, Issue: 11, Article Number: 113517 Published: DEC 1 2009

  2. Near IR Refractive Index for GaInN Heavily Doped with Silicon By: Cywinski, G.; Kudrawiec, R.; Rzodkiewicz, W.; Krysko, M.; Litwin-Staszewska, E.; Misiewicz, J.; Skierbiszewski, C. ACTA PHYSICA POLONICA A Volume: 116, Issue: 5, Pages: 936-938 Published: NOV 2009

  3. Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths By: Cywinski, G.; Kudrawiec, R.; Rzodkiewicz, W.; Krysko, M.; Litwin-Staszewska, E.; Lucznik, B.; Misiewicz, J.; Skierbiszewski, C. APPLIED PHYSICS EXPRESS Volume: 2, Issue: 11, Article Number: 111001 Published: NOV 2009

  4. Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells By: Kudrawiec, R.; Gladysiewicz, M.; Misiewicz, J.; Cywinski, G.; Siekacz, M.; Skierbiszewski, C. MICROELECTRONICS JOURNAL Volume: 40, Issue: 4-5, Pages: 805-808, Special Issue: SI Published: APR-MAY 2009

  5. Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission By: Skierbiszewski, C.; Wasilewski, Z. R.; Grzegory, I.; Porowski, S. JOURNAL OF CRYSTAL GROWTH Volume: 311, Issue: 7, Pages: 1632-1639 Published: MAR 15 2009

  6. Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions By: Kudrawiec, R.; Gladysiewicz, M.; Motyka, M.; Misiewicz, J.; Cywinski, G.; Siekacz, M.; Skierbiszewski, C. MICROELECTRONICS JOURNAL Volume: 40, Issue: 3, Pages: 392-395, Special Issue: SI Published: MAR 2009

  7. Tunable room temperature Terahertz sources based on two dimensional plasma instability in GaN HEMTs By: El Fatimy, A.; Suemitsu, T.; Otsuji, T.; Dyakonova, N.; Knap, W.; Meziani, Y. M.; Vandenbrouk, S.; Madjour, K.; Theron, D.; Gaquiere, Ch.; Prystawko, P.; Skierbiszewski, C. Book Author(s): Varani, L Edited by:Palermo, C; Bastard, G

  8. InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE By: Siekacz, M.; Szankowska, M. L.; Feduniewicz-Zmuda, A.; Smalc-Koziorowska, J.; Cywinski, G.; Grzanka, S.; Wasilewski, Z. R.; Grzegory, I.; Lucznik, B.; Porowski, S.; Skierbiszewski, C. Edited by: Butte, R PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 6, Pages: S917-S920, Part: S2 Published: 2009

2008

  1. Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells By: Cywinski, G.; Skierbiszewski, C.; Siekacz, M.; Feduniewicz-Zmuda, A.; Krysko, M.; Gladysiewicz, M.; Kudrawiec, R.; Nevou, L.; Kheirodin, N.; Julien, F. H.; Misiewicz, J. ACTA PHYSICA POLONICA A Volume: 114, Issue: 5, Pages: 1093-1099 Published: NOV 2008

  2. Zero Field Spin Splitting in GaN/AlGaN Heterostructures Probed by the Weak Antilocalization By: Dybko, K.; Siekacz, M.; Skierbiszewski, C. ACTA PHYSICA POLONICA A Volume: 114, Issue: 5, Pages: 1109-1113 Published: NOV 2008

  3. TEM investigations of (In,Ga)N/GaN quantum structures By: Manolaki, P.; Haeusler, I.; Kirmse, H.; Neumann, W.; Smatc-Koziorowska, J.; Skierbiszewski, C. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Volume: 205, Issue: 11, Pages: 2573-2576 Published: NOV 2008

  4. Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy By: Siekacz, M.; Feduniewicz-Zmuda, A.; Cywinski, G.; Krysko, M.; Grzegory, I.; Krukowski, S.; Waldrip, K. E.; Jantsch, W.; Wasilewski, Z. R.; Porowski, S.; Skierbiszewski, C. JOURNAL OF CRYSTAL GROWTH Volume: 310, Issue: 17, Pages: 3983-3986 Published: AUG 15 2008

  5. Blue laser diodes by low temperature plasma assisted MBE By: Skierbiszewski, Czeslaw Edited by: Lojkowski, W; Blizzard, JR PERSPECTIVES OF NANOSCIENCE AND NANOTECHNOLOGY: ACTA MATERIALIA GOLD MEDAL WORKSHOP Book Series: SOLID STATE PHENOMENA
    Volume: 140, Pages: 17-25 Published: 2008

  6. Computer-assisted analysis of TEM diffraction contrast images of (In,Ga)N/GaN nanostructures By: Manolaki, P.; Haeusler, I.; Kirmse, H.; Mogilatenko, A.; Neumann, W.; Smak-Koziorowska, J.; Skierbiszewski, C. Edited by: Stutzmann, M PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 12 2008 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 5, Issue: 12, Pages: 3732-+ Published: 2008

  7. Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells By: Kudrawiec, R.; Motyka, M.; Cywinski, G.; Siekacz, M.; Skierbiszewski, C.; Nevou, L.; Doyennette, L.; Tchernycheva, M.; Julien, F. H.; Misiewicz, J. Edited by:Saarinen, M; Leitch, A; Botha, R PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 5, Issue: 2, Pages: 503-+ Published: 2008

  8. Optically pumped lasing of GaN/AlGaN structures grown along a non-polar crystallographic direction By: Teisseyre, H.; Szymanski, M.; Khachapuridze, A.; Swietlik, T.; Skierbiszewski, C.; Feduniewicz-Zmuda, A.; Siekacz, M.; Lucznik, B.; Kamler, G.; Krysko, M.; Suski, T.; Perlin, P.; Grzegory, I.; Porowski, S. Edited by:Palacios, T; Jena, D PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 5, Issue: 6, Pages: 2173-+ Published: 2008

2007

  1. Complete in-plane polarization anisotropy of the A exciton in unstrained A-plane GaN films By: Misra, P.; Brandt, O.; Grahn, H. T.; Teisseyre, H.; Siekacz, M.; Skierbiszewski, C.; Lucznik, B. APPLIED PHYSICS LETTERS Volume: 91, Issue: 14, Article Number: 141903 Published: OCT 1 2007

  2. Influence of electric field on recombination dynamics of quantum confined carriers By: Korona, K. P.; Borysiuk, J.; Skierbiszewski, C. ACTA PHYSICA POLONICA A Volume: 112, Issue: 2, Pages: 243-247 Published: AUG 2007

  3. Electron-electron interaction effects in quantum hall regime of GaN/AlGaN heterostructures By: Siekacz, M.; Dybko, K.; Maude, D.; Potemski, M.; Knap, W.; Skierbiszewski, C. ACTA PHYSICA POLONICA A Volume: 112, Issue: 2, Pages: 269-273 Published: AUG 2007

  4. Deep-level defects in MBE-Grown GaN-based laser structure By: Tsarov, T.; Wosinski, T.; Makosa, A.; Skierbiszewski, C.; Grzegory, I.; Perlin, P. ACTA PHYSICA POLONICA A Volume: 112, Issue: 2, Pages: 331-337 Published: AUG 2007

  5. Optically pumped laser action on nitride based separate confinement heterostructures grown along the (11(2)over- bar0) crystallographic direction By: Teisseyre, H.; Szymanski, M.; Khachapuridze, A.; Skierbiszewski, C.; Feduniewicz-Zmuda, A.); Siekacz, M.; Lucznik, B.; Kamler, G.; Krysko, M.; Suski, T.; Perlin, P.; Grzegory, I.; Porowski, S. ACTA PHYSICA POLONICA A Volume: 112, Issue: 2, Pages: 467-472 Published: AUG 2007

  6. Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma- assisted MBE By: Skierbiszewski, C.; Siekacz, M.; Perlin, P.; Feduniewicz-Zmuda, A.; Cywinski, G.; Grzegory, I.; Leszczyniski, M.; Wasilewski, Z. R.; Porowski, S. JOURNAL OF CRYSTAL GROWTH Volume: 305, Issue: 2, Pages: 346-354 Published: JUL 15 2007

  7. Plasmon-cyclotron resonance in two-dimensional electron gas confined at the GaN/AlxGa1-xN interface By: Wolos, A.; Jantsch, W.; Dybko, K.; Wilamowski, Z.; Skierbiszewski, C. PHYSICAL REVIEW B Volume: 76, Issue: 4, Article Number: 045301 Published: JUL 2007

  8. Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma- assisted molecular beam epitaxy on bulk GaN substrates By: Swietlik, T.; Franssen, G.; Skierbiszewski, C.; Czernecki, R.; Wisniewski, P.; Krysko, M.; Leszczynski, M.; Grzegory, I.; Mensz, P.; Jursenas, S.; Suski, T.; Perlin, P. SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 22, Issue: 7, Pages: 736-741 Published: JUL 2007

  9. Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate By: Swietlik, T.; Franssen, G.; Czernecki, R.; Leszczynski, M.; Skierbiszewski, C.; Grzegory, I.; Suski, T.; Perlin, P.; Lauterbach, C.; Schwarz, U. T. JOURNAL OF APPLIED PHYSICS Volume: 101, Issue: 8, Article Number: 083109 Published: APR 15 2007

  10. Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (11(2)over-bar0) nonpolar direction By: Teisseyre, H.; Skierbiszewski, C.; Khachapuridze, A.; Feduniewicz-Zmuda, A.; Siekacz, M.; Ucznik, B.; Kamler, G.; Krysko, M.; Suski, T.; Perlin, P.; Grzegory, I.; Porowski, S APPLIED PHYSICS LETTERS Volume: 90, Issue: 8, Article Number: 081140 Published: FEB 19 2007

  11. Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE By: Swietlik, T.; Skierbiszewski, C.; Czernecki, R.; Franssen, G.; Wisniewski, P.; Leszczynski, M.; Grzegory, I.; Mensz, P.; Suski, T.; Perlin, P. Edited by: Morkoc, H; Litton, CW Gallium Nitride Materials and Devices II Book Series: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) Volume: 6473, Pages: E4731-E4731, Article Number: 64731E Published: 2007

  12. Tunneling in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN By: Golka, S.; Pozzovivo, G.; Schrenk, W.; Strasser, G.; Skierbiszewski, C.; Siekacz, M.; Grzegory, I.; Porowski, S. Edited by:Jantsch, W; Schaffler, F PHYSICS OF SEMICONDUCTORS, PTS A AND B Book Series: AIP Conference Proceedings Volume: 893, Pages: 303-+ Published: 2007

  13. Properties of the two-dimensional electron gas confined in GaN/AlGaN interface studied by electron spin resonance By: Wolos, A.; Jantsch, W.; Dybko, K.; Wilamowski, Z.; Skierbiszewski, C. Edited by: Jantsch, W; Schaffler, F PHYSICS OF SEMICONDUCTORS, PTS A AND B Book Series: AIP Conference Proceedings Volume: 893, Pages: 1313-+ Published: 2007

  14. Continuous-wave operation of blue InGaN laser diodes made by plasma-assisted MBE By: Skierbiszewski, C.; Perlin, P.; Grzegory, I.; Porowski, S. Edited by: Jantsch, W; Schaffler, F PHYSICS OF SEMICONDUCTORS, PTS A AND B Book Series: AIP Conference Proceedings Volume: 893, Pages: 1409-+ Published: 2007

2006

  1. Energy difference between electron subbands in AlInN/GaInN quantum wells studied by contactless electroreflectance spectroscopy By: Motyka, M.; Kudrawiec, R.; Cywinski, G.; Siekacz, M.; Skierbiszewski, C.; Misiewicz, J. APPLIED PHYSICS LETTERS Volume: 89, Issue: 25, Article Number: 251908 Published: DEC 18 2006

  2. High power continuous wave blue InAlGaN laser diodes made by plasma assisted MBE By: Skierbiszewski, C.; Siekacz, M.; Wisniewski, P.; Perlin, P.; Feduniewicz-Zmuda, A.; Cywinski, G.; Smalc, J.; Grzanka, S.; Grzegory, I.; Leszczynski, M.; Porowski, S. ACTA PHYSICA POLONICA A Volume: 110, Issue: 3, Pages: 345-351 Published: SEP 2006

  3. Crack free GaInN/AlInN multiple quantum wells grown on GaN with strong intersubband absorption at 1.55 mu m By: Cywinski, G.; Skierbiszewski, C.; Feduniewicz-Zmuda, A.; Siekacz, M.; Nevou, L.; Doyennette, L.; Julien, F. H.; Prystawko, P.; Krysko, M.; Grzanka, S.; Grzegory, I.; Porowski, S. ACTA PHYSICA POLONICA A Volume: 110, Issue: 2, Pages: 175-181 Published: AUG 2006

  4. Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates By: Zukauskas, A; Kazlauskas, K; Tamulaitis, G; Pobedinskas, P; Jursenas, S; Miasojedovas, S; Ivanov, VY; Godlewski, M; Skierbiszewski, C; Siekacz, M; Franssen, G; Perlin, P; Suski, T; Grzegory, I PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Volume: 243, Issue: 7, Pages: 1614-1618 Published: JUN 2006

  5. 60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy By: Skierbiszewski, C; Wisniewski, P; Siekacz, M; Perlin, P; Feduniewicz-Zmuda, A; Nowak, GGrzegory, I; Leszczynski, M; Porowski, S. APPLIED PHYSICS LETTERS Volume: 88, Issue: 22, Article Number: 221108 Published: MAY 29 2006

  6. Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths By: Cywinski, G.; Skierbiszewski, C.; Fedunieiwcz-Zmuda, A.; Siekacz, M.; Nevou, L.; Doyennette, L.; Tchernycheva, M.; Julien, F. H.; Prystawko, P.; Krysko, M.; Grzanka, S.; Grzegory, I.; Presz, A.; Domagala, J. Z.; Smalc, J.; Albrecht, M.; Remmele, T.; Porowski, S. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 24, Issue: 3, Pages: 1505-1509 Published: MAY-JUN 2006

  7. Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN By: Golka, S; Pflugl, C; Schrenk, W; Strasser, G; Skierbiszewski, C; Siekacz, M; Grzegory, I; Porowski, S APPLIED PHYSICS LETTERS Volume: 88, Issue: 17, Article Number: 172106 Published: APR 24 2006

  8. Blue and UV semiconductor lasers By: Krukowski, S.; Skierbiszewski, C.; Perlin, P.; Leszczynski, M.; Bockowski, M.; Porowski, S. ACTA PHYSICA POLONICA B Volume: 37, Issue: 4, Pages: 1265-1312 Published: APR 2006

  9. Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths By: Skierbiszewski, C. Cywinski, G.; Siekacz, M.; Feduniewicz-Zmuda, A.; Nevou, L.; Doyennette, L.; Tchernycheva, M.; Julien, F. H.; Smalc, J.; Prystawko, P.; Krysko, M.; Grzanka, S.; Grzegory, I.; Domagala, J. Z.; Remmele, T.; Albrecht, M.; Porowski, S Edited by: Litton, CW; Grote, JG; Morkoc, H; Madhukar, A Gallium Nitride Materials and Devices Book Series: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) Volume: 6121, Pages: 12109-12109, Article Number: 612109 Published: 2006

  10. Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers By: Kazlauskas, K.; Jursenas, S.; Miasojedovas, S.; Pobedinskas, P.; Tamulaitis, G.; Zukauskas, A.; Ivanov, V. Y.; Godlewski, M.; Skierbiszewski, C.; Siekacz, M.; Leszczynski, M.; Franssen, G.; Perlin, P.; Suski, T.; Grzegory, I. OPTICA APPLICATA Volume: 36, Issue: 2-3, Pages: 181-185 Published: 2006

  11. Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates By: Korona, K. P.; Skierbiszewski, C.; Siekacz, M.; Feduniewicz, A.; Suski, T.; Franssen, G.; Grzegory, I.; Borysiuk, J.; Leszczynski, M. Edited by:Hildebrandt, S; Stutzmann, M PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 3, Issue: 6, Pages: 1962-1965 Published: 2006

2005

  1. From high electron mobility GaN/AlGaN heterostructures to blue-violet InGaN laser diodes. Perspectives of MBE for nitride optoelectronics By: Skierbiszewski, C. ACTA PHYSICA POLONICA A Volume: 108, Issue: 4, Pages: 635-651 Published: OCT 2005

  2. High power blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy By: Skierbiszewski, C; Perlin, P; Grzegory, I; Wasilewski, ZR; Siekacz, M; Feduniewicz, A; Wisniewski, P; Borysiuk, J; Prystawko, P; Kamler, G; Suski, T, Porowski, S. SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 20, Issue: 8, Pages: 809-813 Published: AUG 2005

  3. Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures By: Knap, W; Skierbiszewski, C; Dybko, K; Lusakowski, J; Siekacz, M; Grzegory, I; Porowski, S. JOURNAL OF CRYSTAL GROWTH Volume: 281, Issue: 1, Pages: 194-201 Published: JUL 15 2005

  4. Control of Mg doping of GaN in RF-plasma molecular beam epitaxy By: Feduniewicz, A; Skierbiszewski, C; Siekacz, M; Wasilewski, ZR; Sproule, I; Grzanka, S; Jakiela, R; Borysiuk, J; Kamler, G; Litwin-Staszewska, E; Czernecki, R; Bockowski, M; Porowski, S. JOURNAL OF CRYSTAL GROWTH Volume: 278, Issue: 1-4, Pages: 443-448 Published: MAY 1 2005

  5. Effective g* factor in the diluted nitrides Ga1-yInyNxAs1-x By: Skierbiszewski, C; Pfeffer, P; Lusakowski, J. PHYSICAL REVIEW B Volume: 71, Issue: 20, Article Number: 205203 Published: MAY 2005

  6. Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (1120) direction By: Teisseyre, H; Skierbiszewski, C; Lucznik, B; Kamler, G; Feduniewicz, A; Siekacz, M; Suski, T; Perlin, P; Grzegory, I, Porowski, S. APPLIED PHYSICS LETTERS Volume: 86, Issue: 16, Article Number: 162112 Published: APR 18 2005

  7. High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy By: Skierbiszewski, C; Dybko, K; Knap, W; Siekacz, M; Krupczynski, W; Nowak, G; Bockowski, M; Lusakowski, J; Wasilewski, ZR; Maude, D; Suski, T; Porowski, S. APPLIED PHYSICS LETTERS Volume: 86, Issue: 10, Article Number: 102106 Published: MAR 7 2005

  8. Stimulated emission from the MBE grown homoepitaxial InGaN based multiple quantum wells structures By: Ivanov, VY; Godlewski, M; Miasojedovas, S; Jursenas, S; Kazlauskas, K; Zukauskas, A; Skierbiszewski, C; Siekacz, M; Leszczynski, M; Perlin, P; Suski, T; Grzegory, I ACTA PHYSICA POLONICA A Volume: 107, Issue: 2, Pages: 225-229 Published: FEB 2005

  9. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy By: Skierbiszewski, C; Wasilewski, ZR; Siekacz, M; Feduniewicz, A; Perlin, P; Wisniewski, P; Borysiuk, J; Grzegory, I; Leszczynski, M; Suski, T; Porowski, S APPLIED PHYSICS LETTERS Volume: 86, Issue: 1, Article Number: 011114 Published: JAN 3 2005

  10. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells By: Chwalisz, B; Wysmolek, A; Korona, KP; Stepniewski, R; Skierbiszewski, C; Grzegory, I; Porowski, S Edited by: Stutzmann, M E-MRS 2004 Fall Meeting Symposia C and F Book Series: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS Volume: 2, Issue: 3, Pages: 1010-1013 Published: 2005

  11. Potential of MBE for gallium nitride based lasers By: Porowski, S.; Skierbiszewski, C. Edited by: Abramski, KM; Lapucci, A; Plinski, EF LASERS AND APPLICATIONS Book Series: Proceedings of SPIE Volume: 5958, Article Number: 59580Z, Published: 2005

  12. High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN By: Siekacz, M; Dybko, K; Skierbiszewski, Knap, W; Wasilewski, Z; Maude, D; Lusakowski, J; Krupczynski, W; Nowak, G; Bockowski, M, Porowski, S. Edited by: Stutzmann, M Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4 Book Series: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS Volume: 2, Issue: 4, Pages: 1355-1359 Published: 2005

  13. High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications By: Consejo, C; Contreras, S; Konczewicz, L; Lorenzini, P; Cordier, Y; Skierbiszewski, C; Robert, JL Edited by: Stutzmann, M. PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 4 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 2, Issue: 4, Pages: 1438-1443 Published: 2005

2004

  1. The electron effective mass at the bottom of the GaNAs conduction band By: Skierbiszewski, C; Gorczyca, I; Lepkowski, SP; Lusakowski, J; Borysiuk, J; Toivonen, J. SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 19, Issue: 10, Pages: 1189-1195 Article Number: PII S0268-1242(04)80378-X Published: OCT 2004

  2. Zeeman splitting in GaInNAs By: Skierbiszewski, C; Lusakowski, J. JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 16, Issue: 31, Pages: S3319-S3331 Special Issue: SI, Article Number: PII S0953-8984(04)75684-2 Published: AUG 11 2004

  3. Spin and interaction effects in Shubnikov-de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures By: Knap, W; Fal'ko, VI; Frayssinet, E; Lorenzini, P; Grandjean, N; Maude, D; Karczewski, G; Brandt, BL; Lusakowski, J; Grzegory, I; Leszczynski, M; Prystawko, P; Skierbiszewski, C; Porowski, SHu, X; Simin, G; Khan, MA; Shur, MS. JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 16, Issue: 20, Pages: 3421-3432 Article Number: PII S0953-8984(04)74559-2 Published: MAY 26 2004

  4. Low dislocation density, high power InGaN laser diodes By: Perlin, P; Leszczyski, M; Prystawko, P; Wisniewski, P; Czernetzki, R; Skierbiszewski, C; Nowak, G; Purgal, W; Weyher, JL; Kamler, G; Borysiuk, J; Krysko, M, Sarzynski, M; Suski, T; Litwin-Staszewska, E; Dmowski, L; Franssen, G; Grzanka, S; Swietlik, T; Grzegory, I; Bockowski, M; Lucznik, B; Porowski, S; Gorczyca, L; Bering, A; Krupczynski, W; Makarowa, I; Wisniewska, R; Libura, A. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH Volume: 9, Issue: 3, Article Number: 3 Published: 2004

  5. High power, pulse current operated, violet light emitting lasers grown on bulk GaN substrates By: Perlin, P; Leszczynski, M; Prystawko, P; Czernetzki, R; Wisniewski, P; Weyher, JL; Nowak, G; Borysiuk, J; Gorczyca, L; Swietlik, T; Franssen, G; Bering, A; Skierbiszewski, C; Grzegory, I; Suski, T; Porowski, S. Edited by: Gmachl, CF; Bour, DP NOVEL IN-PLANE SEMICONDUCTOR LASERS III Book Series: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) Volume: 5365, Pages: 288-296 Published: 2004

  6. Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma- assisted molecular beam epitaxy By: Skierbiszewski, C; Wasilewski, Z; Siekacz, M; Feduniewicz, A; Pastuszka, B; Grzegory, I; Leszczynski, M; Porowski, S PHYSICA STATUS SOLIDI A-APPLIED RESEARCH Volume: 201, Issue: 2, Pages: 320-323 Published: JAN 2004

  7. GaN based light emitters fabricated on bulk GaN substrates. New class of low dislocation density devices By: Perlin, P; Leszczynski, M; Prystawko, P; Skierbiszewski, C; Siekacz, M; Franssen, G; Grzanka, S; Wisniewski, P; Grzegory, I; Porowski, S. Edited by: Kavokin, A; Laussy, FP PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 1, NO 6 Book Series: Physica Status Solidi C-Current Topics in Solid State Physics Volume: 1, Issue: 6, Pages: 1505-1510 Published: 2004

2003

  1. Bulk GaN crystals grown at high pressure as substrates for blue-laser technology By: Czernetzki, R; Leszczynski, M; Grzegory, I; Perlin, P; Prystawko, P; Skierbiszewski, C; Krysko, M; Sarzynski, M; Wisniewski, P; Nowak, G; Libura, A; Grzanka, S; Suski, T; Dmowski, L; Litwin-Staszewska, E; Bockowski, M; Porowski, S. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH Volume: 200, Issue: 1, Pages: 9-12 Published: NOV 2003

2002

  1. Pressure and composition dependence of the electronic structure of GaAs1-xNx By: Gorczyca, I; Skierbiszewski, C; Suski, T; Christensen, NE; Svane, A. PHYSICAL REVIEW B Volume: 66, Issue: 8, Article Number: 081106 Published: AUG 15 2002

  2. Experimental studies of the conduction-band structure of GaInNAs alloys By: Skierbiszewski, C SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 17, Issue: 8, Pages: 803-814 Article Number: PII S0268-1242(02)37907-0 Published: AUG 2002

  3. Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells By: Skierbiszewski, C; Lepkowski, SP; Perlin, P; Suski, T; Jantsch, W; Geisz, J. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 13, Issue: 2-4, Pages: 1078-1081 Article Number: PII S1386-9477(02)00307-7 Published: MAR 2002

  4. Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures By: Knap, W; Borovitskaya, E; Shur, MS; Hsu, L; Walukiewicz, W; Frayssinet, E; Lorenzini, P; Grandjean, N; Skierbiszewski, C; Prystawko, P; Leszczynski, M; Grzegory, I. APPLIED PHYSICS LETTERS Volume: 80, Issue: 7, Pages: 1228-1230 Published: FEB 18 2002

  5. Band structure and optical properties of InyGa1-yAs1-xNx alloys By: Skierbiszewski, C; Perlin, P; Wisniewski, P; Suski, T; Geisz, JF; Hingerl, K; Jantsch, W; Mars, DE; Walukiewicz, W PHYSICAL REVIEW B Volume: 65, Issue: 3, Article Number: 035207 Published: JAN 15 2002

2001

  1. Epitaxy on GaN bulk crystals By: Leszczynski, M; Prystawko, P; Czernecki, R; Lehnert, J; Perlin, P; Wisniewski, P; Skierbiszewski, C.; Suski, T; Nowak, G; Karouta, F; Holst, J; Grzegory, I; Porowski, S. OPTO-ELECTRONICS REVIEW Volume: 9, Issue: 2, Pages: 125-128 Published: JUN 2001

  2. Blue laser on high N-2 pressure-grown bulk GaN By: Grzegory, I; Bockowski, M; Krukowski, S; Lucznik, B; Wroblewski, M; Weyher, JL; Leszczynski, M; Prystawko, P; Czernecki, R; Lehnert, J; Nowak, G; Perlin, P; Teisseyre, H; Purgal, W; Krupczynski, W; Suski, T; Dmowski, LH; Litwin-Staszewska, E; Skierbiszewski, C; Lepkowski, S; Porowski, S. ACTA PHYSICA POLONICA A Volume: 100, Pages: 229-232, Supplement: S Published: 2001

  3. Epitaxy on GaN bulk crystals By: Leszczynski, M; Prystawko, P; Czernecki, R; Lehnert, J; Perlin, P; Wisniewski, P; Skierbiszewski, C, Suski, T; Nowak, G; Karouta, F; Holst, J; Grzegory, I; Porowski, S. Edited by:Rutkowski, J; Wenus, J; Kubiak, L INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY Book Series: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) Volume: 4413, Pages: 11-15 Published: 2001

2000

  1. High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates By: Frayssinet, E; Knap, W; Lorenzini, P; Grandjean, N; Massies, J; Skierbiszewski, C; Suski, T; Grzegory, I; Porowski, S; Simin, G; Hu, X; Khan, MA; Shur, MS; Gaska, R; Maude, D. APPLIED PHYSICS LETTERS Volume: 77, Issue: 16, Pages: 2551-2553 Published: OCT 16 2000

  2. Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x By: Skierbiszewski, C; Perlin, P; Wisniewski, P; Knap, W; Suski, T; Walukiewicz, W; Shan, W; Yu, KM; Ager, JW; Haller, EE; Geisz, JF; Olson, JM APPLIED PHYSICS LETTERS Volume: 76, Issue: 17, Pages: 2409-2411 Published: APR 24 2000

  3. Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01 By: Perlin, P; Wisniewski, P; Skierbiszewski, C; Suski, T; Kaminska, E; Subramanya, SG; Weber, ER; Mars, DE; Walukiewicz, W. APPLIED PHYSICS LETTERS Volume: 76, Issue: 10, Pages: 1279-1281 Published: MAR 6 2000

  4. Pressure studies of band structure, defects and impurities in group III nitrides By: Perlin, P; Suski, T; Skierbiszewski, C; Wisniewski, P HIGH PRESSURE RESEARCH Volume: 18, Issue: 1-6, Pages: 21-28 Published: 2000

1999

  1. Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions By: Knap, W; Frayssinet, E; Sadowski, ML; Skierbiszewski, C; Maude, D; Falko, V; Khan, MA; Shur, MS. APPLIED PHYSICS LETTERS Volume: 75, Issue: 20, Pages: 3156-3158 Published: NOV 15 1999

  2. Evidence for localized Si-donor state and its DX-like properties in AlGaN (vol 74, pg 3833, 1999) By: Skierbiszewski, C; Suski, T; Leszczynski, M; Shin, M; Skowronski, M; Bremser, MD; Davis, RF. APPLIED PHYSICS LETTERS Volume: 75, Issue: 20, Pages: 3225A-3225A Published: NOV 15 1999

  3. Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys By: Skierbiszewski, C; Perlin, P; Wisniewski, P; Suski, T; Walukiewicz, W; Shan, W; Ager, JW; Haller, EE; Geisz, JF; Friedman, DJ, Olson, JM; Kurtz, SR. PHYSICA STATUS SOLIDI B-BASIC RESEARCH Volume: 216, Issue: 1, Pages: 135-139 Published: NOV 1999

  4. Pressure studies of defects and impurities in nitrides By: Suski, T; Perlin, P; Skierbiszewski, C; Wisniewski, P; Dmowski, L; Leszczynski, M; Walukiewicz, W. PHYSICA STATUS SOLIDI B-BASIC RESEARCH Volume: 216, Issue: 1, Pages: 521-528 Published: NOV 1999

  5. Conduction band energy spectrum of two-dimensional electrons in GaN/AlGaN heterojunctions By: Knap, W; Frayssinet, E; Skierbiszewski, C; Chaubet, C; Sadowski, ML; Maude, D; Khan, MA; Shur, MS. PHYSICA STATUS SOLIDI B-BASIC RESEARCH Volume: 216, Issue: 1, Pages: 719-725 Published: NOV 1999

  6. Evidence for localized Si-donor state and its metastable properties in AlGaN By: Skierbiszewski, C; Suski, T; Leszczynski, M; Shin, M; Skowronski, M; Bremser, MD; Davis, RF APPLIED PHYSICS LETTERS
    Volume: 74, Issue: 25, Pages: 3833-3835 Published: JUN 21 1999

  7. Far infrared emission and population inversion of hot holes in MQW InGaAs/GaAs heterostructures excited at lateral transport By: Aleshkin, VY; Andronov, AA; Antonov, AV; Bekin, NA; Gavrilenko, AV; Gavrilenko, VI; Revin, DG; Uskova, EA; Zvonkov, BN; Zvonkov, NB; Knap, W; Lusakowski, J; Skierbiszewski, C Edited by: Sakaki, H; Woo, JC; Yokohama, N; Hirayama, Y COMPOUND SEMICONDUCTORS 1998 Book Series: INSTITUTE OF PHYSICS CONFERENCE SERIES Issue: 162, Pages: 105-110 Published: 1999

  8. Far infrared emission and population inversion of hot holes in MQW InGaAs/GaAs heterostructures under real space transfer By: Aleshkin, VY; Andronov, AA; Antonov, AV; Bekin, NA; Gavrilenko, AV; Gavrilenko, VI; Revin, DG; Uskova, EA; Zvonkov, BN; Zvonkov, NB; Knap, W; Lusakowski, J; Skierbiszewski, C. Edited by: Asmontas, S; Dargys, A ULTRAFAST PHENOMENA IN SEMICONDUCTORS Book Series: MATERIALS SCIENCE FORUM Volume: 297-2, Pages: 261-264 Published: 1999

1998

  1. The universal behaviour of shallow-deep level instabilities in semiconductors By: Skierbiszewski, C; Wilamowski, Z; Jantsch, W. PHYSICA STATUS SOLIDI B-BASIC RESEARCH Volume: 210, Issue: 2, Pages: 765-769 Published: DEC 1998

  2. Evidence for alloy splitting of Ge related DX state in AlxGa1-xAs By: Skierbiszewski, C; Piotrzkowski, R; Lubke, K. ACTA PHYSICA POLONICA A Volume: 94, Issue: 3, Pages: 531-533 Published: SEP 1998

  3. Properties of Fe doped beta-HgS under hydrostatic pressure By: Szuszkiewicz, W; Skierbiszewski, C; Paszkowicz, W; Dybko, K; Domagala, J; Dynowska, E; Witkowska, B; Zinn, P. ACTA PHYSICA POLONICA A Volume: 94, Issue: 3, Pages: 570-574 Published: SEP 1998

  4. Far infrared spectroscopy with high resolution cyclotron resonance filters By: Skierbiszewski, C; Knap, W; Dur, D; Ivchenko, EL; Huant, S; Etienne, B. JOURNAL OF APPLIED PHYSICS Volume: 84, Issue: 1, Pages: 433-438 Published: JUL 1 1998

1997

  1. Contactless characterisation of 2D-electrons in GaN/AlGaN HFETs By: Alause, H; Skierbiszewski, C; Dyakonov, M; Knap, W; Sadowski, ML; Huant, S; Young, J; Khan, MA; Chen, Q. DIAMOND AND RELATED MATERIALS Volume: 6, Issue: 10, Pages: 1536-1538 Published: AUG 1997

  2. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface By: Knap, W; Contreras, S; Alause, H; Skierbiszewski, C; Camassel, J; Dyakonov, M; Robert, JL); Yang, J; Chen, Q; Khan, MA; Sadowski, ML; Huant, S; Yang, FH; Goiran, M; Leotin, J; Shur, MS. APPLIED PHYSICS LETTERS Volume: 70, Issue: 16, Pages: 2123-2125 Published: APR 21 1997

  3. Experimental evidence for the two-electron nature of In-related DX states in CdTe By: Skierbiszewski, C; Wisniewski, P; Wilamowski, Z; Jantsch, W; Karczewski, G Edited by: Davies, G; Nazare, MH DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 Book Series: MATERIALS SCIENCE FORUM Volume: 258-2, Pages: 1353-1358, Part: 1-3 Published: 1997

  4. Photo- and electroluminescence of erbium-doped silicon By: Lanzerstorfer, S; Stepikhova, M; Hartung, J; Skierbiszewski, C; Jantsch, W. Edited by:Davies, G; Nazare, MH DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 Book Series: MATERIALS SCIENCE FORUM Volume: 258-2, Pages: 1509-1514, Part: 1-3 Published: 1997

1996

  1. Two-electron DX state in CdTe:In By: Skierbiszewski, C; Wisniewski, P; Litwin-Staszewska, E; Suski, T; Wilamowski, Z; Zakrzewski, AK; Karczewski, G; Jantsch, W. ACTA PHYSICA POLONICA A Volume: 90, Issue: 5, Pages: 927-930 Published: NOV 1996

  2. Weak antilocalization and spin precession in quantum wells By: Knap, W; Skierbiszewski, C; Zduniak, A; LitwinStaszewska, E; Bertho, D; Kobbi, F; Robert, JL; Pikus, GE; Pikus, FG; Iordanskii, SV; Mosser, V; Zekentes, K; LyandaGeller, YB. PHYSICAL REVIEW B Volume: 53, Issue: 7, Pages: 3912-3924 Published: FEB 15 1996

  3. Factors governing the photoluminescence yield of erbium implanted silicon By: Jantsch, W; Przybylinska, H; Skierbiszewski, C; Lanzerstorfer, S; Palmetshofer, L Edited by: Coffa, S; Polman, A; Schwartz, RN RARE EARTH DOPED SEMICONDUCTORS II Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume: 422, Pages: 101-111 Published: 1996

1995

  1. Barrier between localized and shallow neutral donor states in GaAs-Ge By: Skierbiszewski, C; Jantsch, W; Wilamowski, Z; Lubke, K; SuskI, T. PHYSICAL REVIEW B Volume: 52, Issue: 20, Pages: 14312-14315 Published: NOV 15 1995

  2. Metastability of localized neutral donor state in GaAs By: Skierbiszewski, C; Jantsch, W; Lubke, K; Wilamowski, Z; Suski, T. ACTA PHYSICA POLONICA A Volume: 88, Issue: 5, Pages: 905-908 Published: NOV 1995

  3. The light-hole mass in a strained ingaas/gaas single-quantum-well and its pressure-dependence By: Lancefield, D; Adams, AR; Meney, AT; Knap, W; Litwin-Staszewska, E; Skierbiszewski, C; Robert, JL JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS Volume: 56, Issue: 3-4, Pages: 469-473 Published: MAR-APR 1995

  4. Weak antilocalization in quantum-wells By: Knap, W; Skierbiszewski, C; litwin-Staszewska, E, Kobbi, F; Zduniak, A; Robert, JL; Pikus, GE; Iordanskii, SV; Mosser, V; Zekentes, K. ACTA PHYSICA POLONICA A Volume: 87, Issue: 2, Pages: 427-432 Published: FEB 1995

  5. Correlated charged donors in GaAs/AlGaAs quantum well. Quantum- and mobility-scattering times By: Suski, T; Wisniewski, P; Litwin-Staszewska, E; Skierbiszewski, C; Brunthaler, G; Kohler, K. Edited by: Suezawa, M; KatayamaYoshida, H ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1- Book Series: MATERIALS SCIENCE FORUM Volume: 196-, Pages: 443-447 Published: 1995

  6. A new type of metastability due to donors in GaAs By: Skierbiszewski, C; Jantsch, W; Wilamowski, Z; Lubke, K; Suski, T. Edited by:Suezawa, M; KatayamaYoshida, H ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1- Book Series: MATERIALS SCIENCE FORUM Volume: 196-, Pages: 1025-1029 Published: 1995

  7. 2-dimensional electron-gas mobility anomalies (and enhancement) in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures By: Litwin-Staszewska, E; Suski, T; Skierbiszewski, C; Kobbi, F; Robert, JL; Mosser, V. JOURNAL OF APPLIED PHYSICS Volume: 77, Issue: 1, Pages: 405-407 Published: JAN 1 1995

1994

  1. Determination of the basic parameters of pseudomorphic gainas quantum-wells by means of simultaneous transport and optical investigations By: Litwin-Staszewska, E; Kobbi, F; Kamalsaadi, M; Dur, D; Skierbiszewski, C; Sibari, H; Zekentes, K; Mosser, V; Raymond, A; Knap, W; Robert, JL. SOLID-STATE ELECTRONICS Volume: 37, Issue: 4-6, Pages: 665-667 Published: APR-JUN 1994

  2. Coexistence of 2 localized states of the ge donor in GaAs as evidenced by a huge increase of the electron-mobility at ppc conditions By: Skierbiszewski, C; Wisniewski, P; Suski, T; Wilamowski, Z; Ostermayer, G; Jantsch, W; Walker, P; Mason, NJ; Singleton, J Edited by: Heinrich, H; Jantsch, W. PROCEEDINGS OF THE 17TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-3: ICDS-17 Book Series: MATERIALS SCIENCE FORUM Volume: 143-, Pages: 1013-1018, Part: 1-3 Published: 1994

1993

  1. Metastable and nonmetastable deep states of ge in GaAs By: Skierbiszewski, C; Suski, T; Wisniewski, P; Jantsch, W; Ostermayer, G; Wilamowski, Z; Walker, PG; Mason, NJ; Singleton, J. APPLIED PHYSICS LETTERS Volume: 63, Issue: 23, Pages: 3209-3211 Published: DEC 6 1993

  2. Unusual behavior of the Ge DX center in GaAs - coexistence of 2 localized donor states By: Vanderwel, PJ; Wisniewski, P; Suski, T; Singleton, J, Skierbiszewski, C; Giling, LJ; Warburton, R; Walker, PJ; Mason, NJ, Nicholas, RJ; Eremets, M JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 5, Issue: 28, Pages: 5001-5008 Published: JUL 12 1993

  3. Unusual behavior of the DX-center in GaAs-Ge By: Wisniewski, P; Vanderwel, P; Suski, T; Singleton, J; Skierbiszewski, C; Giling, LJ; Warburton, R; Walker, PG; Mason, NJ; Nicholas, RJ; Eremets, M Edited by:Arai, T; Onari, S JAPANESE JOURNAL OF APPLIED PHYSICS, VOL 32, SUPPLEMENT 32-1: PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON HIGH PRESSURE IN SEMICONDUCTOR PHYSICS Pages: 218-220 Published: 1993

  4. Why various types of donor can either enhance or reduce electron-mobility in narrow-gap semiconductors By: Skierbiszewski, C; Wilamowski, Z; Suski, T; Kossut, J; Witkowska, B SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 8, Issue: 1, Pages: S40-S43 Supplement: S Published: JAN 1993

  5. The band-structure of mixed-crystal Hg1-xFexSe By: Skierbiszewski, C; Wilamowski, Z; Kossut, J SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 8, Issue: 1, Pages: S22-S25 Supplement: S Published: JAN 1993

1992

  1. Electron-scattering and the band-structure of mixed-crystals Hg1-xFexSe By: Skierbiszewski, C; Wilamowski, Z; Suski, T; Kossut, J; Witkowska, B ACTA PHYSICA POLONICA A Volume: 82, Issue: 5, Pages: 809-812 Published: NOV 1992

1991

  1. High-pressure studies of electron-mobility in heavily doped GaAs - fitting of the absolute value By: Dmowski, L; Wisniewski, P; Skierbiszewski, C; Suski, T; Vanderwel, PJ; Singleton, J; Kossut, J; Ploog, K; Harris, JJ. SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 6, Issue: 10, Pages: 969-972

  2. Pressure study of charged donor ordering in HgSe doped with iron and gallium By: Skierbiszewski, C; Suski, T; Kossut, J; Wilamowski, Z; Dobrowolski, W; Witkowska, B. ACTA PHYSICA POLONICA A Volume: 80, Issue: 3, Pages: 401-404 Published: SEP 1991 Published: OCT 1991

  3. Concentration dependent mobility of 2-dimensional electron-gas in GaAs/aiGaAs heterostructure By: Gorczyca, I; Skierbiszewski, C; Litwins-Saszewska, E; Suski, T; Krupski, J; Ploog, K SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 6, Issue: 6, Pages: 461-464 Published: JUN 1991

  4. Elimination of DX centerlike behavior of donors in heavily doped GaAs By: Suski, T; Wisniewski, P; Skierbiszewski, C; Dmowski, LH; Vanderwel, PJ; Singleton, J; Giling, LJ; HARRIS, JJ. JOURNAL OF APPLIED PHYSICS Volume: 69, Issue: 5, Pages: 3087-3093 Published: MAR 1 1991

  5. Magnetotransport in high mobility insb-cdte heterojunctions - electric spin-splitting of subbands and high-pressure effects By: Singleton, J; Greene, SK; Golding, TD; Pepper, M; Skierbiszewski, C; Wisniewski, P; Vanderwel, PJ; Vanthor, PHE; Dinan, J. SUPERLATTICES AND MICROSTRUCTURES Volume: 9, Issue: 1, Pages: 51-54 Published: 1991

1990

  1. Shubnikov-De Haas effect under hydrostatic-pressure in HgSe-Fe By: SKIERBISZEWSKI, C; SUSKI, T; DOBROWOLSKI, W; KOSSUT, J JOURNAL OF CRYSTAL GROWTH Volume: 101, Issue: 1-4, Pages: 869-871 Published: APR 1990

  2. Mobility in heavily doped n-GaAs at pressures above 15 kbar - interdonor interactions in the dx center system By: Wisniewski, P; Dmowski, L; Skierbiszewski, C; Suski, T; Vanderwel, PJ; Singleton, J; Kossut, J; Ploog, K; Harris, JJ Edited by:Anastassakis, EM; Joannopoulos, JD 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3 Pages: 2574-2577 Published: 1990

  3. The influence of hydrostatic-pressure on the formation of a donor superlattice in HgSe-Fe By: Skierbiszewski, C; Suski, T; Litwin-Staszewska, E; Dobrowolski, W; Dybko, K; Mycielski, A SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 4, Issue: 4, Pages: 293-295 Published: APR 1989

1989

1988

  1. Metastable character of grain-boundary defects in p-Hg1-xMnxTe and Hg1-x-yCdyMnxTe By: Wisniewski, P; Suski, T; Skierbiszewski, C; Dmowski, L; Grabecki, G; Dietl, T ACTA PHYSICA POLONICA A Volume: 73, Issue: 3, Pages: 443-446 Published: MAR 1988

1986

  1. Pressure-dependence of dielectric-constant in insb crystal By: Wisniewski, P; Skierbiszewski, C; Suski, T ACTA PHYSICA POLONICA A Volume: 69, Issue: 5, Pages: 889-891 Published: MAY 1986