News archive
PhD student in OPUS project
We offer a PhD scholarship in OPUS project "Monolithic superconductor-semiconductor integration using nitride platform" Application deadline 27.11.2023.
The doping of a GaN crystal with germanium
We are pleased to inform that the article "Role of Metallic Adlayer in Limiting Ge Incorporation into GaN" has been published in Materials and is available online. It describes the doping of a GaN crystal with germanium using the MBE method and describes the role of the metallic layer on the surface during epitaxy.
Distinction of the Rzeczpospolita Cyfrowal
for Dr. Marta Sawicka "For a special contribution to the development of Polish digital transformation in 2021 for research on lasers"
Foto. Mariusz Szachowski
GaN: Mg electrochemical etching published in Acta Materialia Congratulations to Natalia Fiuczek!
Good understanding and reproducibility of the n-type GaN electrochemical etching (ECE) process made this technique an interesting method of controlling the refractive index of GaN layers by changing their porosity. However, in the case of p-type GaN, the lack of model and understanding of the process appeared to be a significant obstacle in the demonstration of p-type ECE GaN etching in a controlled manner. In the work of N. Fiuczek et al. "Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection", recently published in the prestigious journal Acta Materialia, the authors explain the p-type etching mechanism and show that the use of a tunnel junction allows for very effective injection of carriers needed for digestion.
The paper presents for the first time electrochemical etching of GaN layers doped with p-type at constant voltage and without the use of an external light source. Thanks to the use of a tunnel junction, homogeneous and perfectly controllable etching of GaN and InGaN layers doped with Mg was obtained. Interestingly, the voltage range for which porous layers were obtained was only ~ 0.4 V. The threshold etching voltages (2.2 V) and the voltages at which strong etching was obtained (2.4 V) are much lower than for n-type doped GaN layers with the same concentration of admixtures. The work also showed that the transport of holes in the material was not limited to 200 µm in-plane distance. Using the proposed model of etching of p-typical GaN layers, it was explained how this process takes place in the tunnel junction system used as a layer for injecting carriers into the etched layer.
COST "European Network for Innovative and Advanced Epitaxy" - OPERA
On September 27, 2021 the COST Action "European Network of Innovative and Advanced Epitaxy", named OPERA had its kick-off meeting. There are 33 countries involved in the project, including Poland. The goal of the project is to build a new and innovative European Network composed of expert communities in epitaxial growth focusing on different materials classes: conventional semiconductors, oxides and 2D materials. In this COST Action, Poland is represented by dr hab. Wojciech Pacuski from the University of Warsaw and dr inż. Marta Sawicka from our Institute of High Pressure Physics of the Polish Academy of Sciences. More information about the project goals and involved people can be found here: www.cost.eu/actions/CA20116.
BANANO project
We are happy to announce that the project of our colleague Dr. Marta Sawicka was first listed in the SMALL GRANT SCHEME competition ranking, published on May 7, 2021 by the National Center for Research and Development
The project entitled 'Buried periodic Arrays of NANOchannels for single-frequency nitride lasers' will exploit the synergy of several advanced technologies in order to develop GaN-based lasers of single-frequency spectrum (DFB LDs). The innovation of the proposed approach is related to positioning an efficient diffraction grating inside the structure. The schematic view of the device is presented in the graphic below (author Mateusz Hajdel).
Nitride tunnel joints with record-low resistance
Mikołaj Żak and our colleagues published an interesting paper on nitride tunnel junctions fabricated by molecular beam epitaxy Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices in Physical Review Applied. The paper proposes a method of producing GaN: Mg / InGaN: Mg + / InGaN: Si + / GaN: Si doped tunnel junctions with record-low series resistance while maintaining high quality of the structures. The experimental results of the measured tunneling current were supported by calculations in the k · p Kane model taking into account the realistic distribution of electric fields in the junction structure. An important element in explaining the compliance of the theoretical model with the experimental results of the tunneling effects was the analysis of the structure of the GaN valence band and the adoption of the correct effective mass for holes involved in tunneling.
PhD scholarship in MBE lab
01.12.2021. PhD students are welcome to apply for a position in NCN OPUS project that is carried out in our MBE lab. More details can be found in NCN database: PhD student „Growth and characterization of NbN/GaN superconducting bolometers”.
PhD scholarships in MBE lab
16.09.2020. We announce the results of the competitions for PhD positions in our MBE laboratory. Two young researchers will join the research teams of the NCN SONATA projects. Congratulations to Mikołaj Żak who will work in the project "Circumvention of piezoelectric fields in III-nitride heterostructures – a way towards solving the green gap problem" PI - dr inż. Grzegorz Muzioł, and Natalia Fiuczek, who will work in the project "Nanoporous GaN – a new platform for realization of quantum structures", PI - dr inż. Marta Sawicka.
New projects
18.05.2020 The National Science Center (NCN) published a list of projects qualified for funding in NCN calls: OPUS, PRELUDIUM and SONATA. Four proposals from our group got funding. Dr Marta Sawicka will be a PI of a SONATA project „Nanoporous GaN - a new platform for realization of quantum structures” (ST5 panel), Dr Grzegorz Muzioł will be a PI of SONATA project „Circumvention of piezoelectric fields in III-nitride heterostructures – a way towards solving the green gap problem” (ST3 panel). PhD students were granted projects PRELUDIUM (ST7 panel): Mateusz Hajdel will be a PI of a project „Influence of build-in piezoelectric fields on performance of nitride laser diodes” and Mikołaj Chlipała will be a PI of a project „Monolithic bipolar junction transistor driving LED in group III nitrieds material system”. New scientific challenges are ahead of us.
Master thesis defense of Julia Sławińska and Natalia Fiuczek
09.09.2019 Julia Sławińska and Natalia Fiuczek defended Master Thesis with honours. They carried out the research in Institute of High Pressure Physics PAS within Foundation for Polish Science projects: "Tunnel junction and its applications for GaN based optoelectronics" leaded by prof. Czesław Skierbiszewski and "Development of high quality InAlN – the road to strain-free nitride lasers" leaded by dr inż. Marta Sawicka. Congratulations!
Best Poster Award for Julia Sławińska at 13th International Conference of Nitride Semiconductors 7-12.07.2019 in Bellevue"
24.07.2019 Julia Slawinska is a master student in prof. Czeslaw Skierbiszewski group in UNIPRESS. She presented at the conference poster entitled "Arrays of Nitride MicroLEDs with Tunnel Junctions Grown by Plasma Assisted Molecular Beam Epitaxy". Julia is involved in TEAM-TECH POIR.04.04.00-00-210C/16-00 project of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund. More info at mrs website.
Public defense of Mikołaj Chlipała MSc thesis
16.07.2019 Congratulation to Mikołaj Chlipała on an excellent defense of his MSc thesis (with honors). Thesis title was "Electroluminescence mechanism at cryogenic temperatures of nitride diodes with tunnel junction, grown by molecular beam epitaxy". Mikołaj Chlipała is a laureate of the Fundation for Polish Science scholarship and a team member of TEAM-TECH project.
Prof. Czesław Skierbiszewski - chariman of "Jaszowiec 2020"
14.06.2019 Program Comittee of "International School & Conference on the Physics of Semiconductors" nominated Prof. Czesław Skierbiszewski to be the chairman of the next "Jaszowiec" conference.
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Scholarship for a Master student
14.06.2019 Students enrolled in Master Programm are welcome to apply for a sholarship within the HOMING project "Polarity engineering in Nitride heterostructures" financed by the Foundation for Polish Science. Primary Investigator (PI) - dr Henryk Turski. Offer details and required application documents can be found on Euraxess webpage. Application deadline os 14/06/2019 12:00 (Warsaw/Athens time).
Best oral presentation award for Natalia Fiuczek
On May 18-19.2019 our students - Natalia Fiuczek, Julia Sławińska and Mikołaj Chlipała - gave oral presentations on IV edition of Ogólnopolska Konferencja Zaawansowane Materiały i Nanotechnologia organized at the Warsaw University. They are students of Gdańsk University of Technology and they carry out research in the Institute of High Pressure Technology, in our laboratory. Natalia Fiuczek oral presentation was awarded in the category of experiemntal physics research. Congratulations!
Our PhD students with honourable mention
We are proud to announce that Mikołaj Żak MSc and Mateusz Hajdel MSc received the distinction in the XXVII edition of the Adam Smoliński Competition for the best thesis in field of optoelectronics. The competition was organized by Polish Committee of Optoelectronics SEP. Both master's theses were realized in collaboration of the Gdańsk University of Technology and the MBE laboratory of the Institute of High Pressure Physics PAS. CONGRATULATIONS!
PhD student Mateusz Hajdel is a laureate of "100 na 100" scholarship program
30.11.2018 We are glad to inform that Mateusz Hajdel, MSc is a laureate of Halina Konopacka and Ignacy Matuszewski "100 na 100" scholarship program founded by Lotto Foundation. The scholarship is granted to 100 best polish student to allow them further self-development and gaining knowledge also outside of their own discipline. More information about the program on page: www.fundacjalotto.pl/100stypendiow
New project - PhD scholarship offer
PhD students are invited to apply for a scholarship position in HOMING project of the Foundation for Polish Science "Polarity engineering in Nitride heterostructures", leaded by dr Henryk Turski. Application deadline 29.10.2018 at 12:00. More details can be found here: 1_oferta-pracy_FNP_IWC_Homing.pdf
Congratulations on the scholarship of Ministry of Science and Higher Education
We are proud to announce that dr inż. Grzegorz Muzioł and dr Henryk Turski will receive the scholarships of Ministry of Science and Higher Education. They are among 181 young scientists with esceptional scientific recors who carry out high quality research.
New team members of MBE lab
01.09.2018 Congratulations to Gdańsk University of Technology students who joined the research teams of TEAM-TECH and POWROTY projects of Foundation for Polish Science. Mikołaj Chlipała and Julia Sławińska work in TEAM-TECH "Tunnel junction and its applications for GaN based optoelectronics" - leaded by prof. dr hab. Czesław Skierbiszewski. Natalia Fiuczek works in POWROTY project "Development of high quality InAlN - the road to strain-free nitride lasers" - leaded by dr inż. Marta Sawicka.
Dr Grzegorz Muzioł is granted a LIDER project
13.08.2018 National Center for Research and Development granted LIDER project to dr inż Grzegorz Muzioł from MBE laboratory. He will develop distributed feedback laser diodes (DFB LDs) on GaN.
Dr Henryk Turski among the grant winners of HOMING programme
Foundation for Polish Science has announced the results of fifth competitions in HOMING and REINTEGRATION programmes. Dr Henryk Turski from MBE Laboratory is among the grant winners of HOMING programme with his project "Polarity engineering in nitride heterostructures". CONGRATULATIONS!
Gdańsk University of Technology is a partner of TEAM-TECH project
Institute of High Pressure Physics and Gdańsk University of Technology, Faculty of Applied Physics and Mathematics, represented by professor Wojciech Sadowski, start the partnership in TEAM-TECH project.
Public defense of Mateusz Hajdel MSc thesis
16.07.2018 Congratulation to Mateusz Hajdel on an excellent defense of his MSc thesis (with honors). Mateusz Hajdel is a laureate of the Fundation for Polish Science scholarship and a team member of TEAM-TECH project.
Dr. inż. Marta Sawicka a laureate of POWROTY 4/2017 programme
Foundation for Polish Science has announced results of fourth competitions in HOMING and POWROTY programmes. One of the laureates of POWROTY 4/2017 programme is our Team member dr inż. Marta Sawicka
Her project Development of high quality InAlN - the road to strain-free nitride lasers is aimed to understand microscopic growth mechanism and finding optimal growth conditions for high quality InAlN composed of 83% Al and 17%In, that is lattice matched to GaN. Obtaining high quality InAlN by PAMBE will be crucial for enhancing parameters of currently developed edge emitting lasers and will allow manufacturing of surface emitting diodes (VCSELs),currently not available on the market.
Project will be carried in collaboration with Prof. E. Calleja's group from Technical University of Madrid theoretical physicists group of Prof. M. Załuska-Kotur from Institute of Physics PAS. Results will be tested on laser diode structures prepared together with TopGaN.