Structures to your specification
We grow epitaxial structures to order only – there is no catalogue of standard structures. Each job is prepared to the customer's requirements: from the layer design, through the choice of substrate (including our own GaN substrates), to the growth technique – MOCVD or MBE.
Plasma-assisted molecular beam epitaxy (PAMBE)
- MBE Epitaxy Laboratory (NL-14) – nitride structures for light emitters (LEDs, laser diodes) from UV to yellow, tunnel-junction structures, heavily Ge- and Si-doped layers.
- Integrated Nitride Structures Laboratory (NL-16) – growth on both sides of the same crystal, structures for separating thin devices from the GaN substrate; dual-chamber Veeco Gen20a PAMBE reactor.
Metal-organic vapour phase epitaxy (MOCVD / MOVPE)
- Crystal Growth Laboratory (NL-3) – epitaxial semiconductor structures for optoelectronics and electronics.
- Optoelectronic Devices Laboratory (NL-15) – structures for optoelectronic devices (laser diodes, optical amplifiers, superluminescent diodes) – from structure design to epitaxial growth.
How to order
- Send a description of the required structure: layer sequence, materials, thicknesses, doping, substrate type and size, quantity.
- Our specialists assess feasibility and propose the technology and any adjustments.
- We prepare an individual quotation with lead time.
Contact and inquiries
Individual quote - depending on specification