Projects | Institute of High Pressure Physics Polish PAS

Ongoing projects
Completed

Ab initio thermodynamics and engineering of point defects in nanometric nearsurface areas of III-nitride semiconductors

Paweł Kempisty
National Science Center
January 2022 December 2026

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Acive Building Blocs for Visible and Near-Infrared Applications on a Silicon Nitride Interposer

Henryk Turski
September 2022 August 2026

Device focused research of amplification, generation and control of terahertz radiation

Viacheslav Kochelap
September 2023 August 2026

Center for Physics and Technology of Nitride Semiconductors "GaN-Unipress"

Michał Boćkowski
January 2024 June 2026

Seizing the advantages of Nitrogen-polar GaN for III-nitride light emitters

Henryk Turski
June 2022 June 2026

The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exceptional structural quality

Tomasz Sochacki
National Science Centre
June 2021 June 2026

Badania in-situ relaksacji plastycznej warstw buforowych InGaN w celu zwiększenia limitów zawartyości indu w azotkowych warstwach epitaksjalnych

Julita Smalc-Koziorowska
National Science Center
December 2021 June 2026

CHIP-scale Optical Atomic Clock

Henryk Turski
European Commision
October 2022 March 2026

Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

Karolina Grabiańska
National Science Center
January 2022 January 2026

Crystallization from vapor phase of bulk gallium nitride doped with germanium

Kacper Paweł Sierakowski
National Science Centre
January 2022 January 2026

Basics of (AlGaIn)N epitaxy on GaN substrates laterally patterned for the production of laser arrays emitting light in the 520-540 nm range for the purpose of three-dimensional image projection

Ewa Grzanka
January 2022 January 2026

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