| Title: | Krystalizacja z fazy gazowej objętościowego azotku galu domieszkowanego germanem |
| Project leader: | Kacper Paweł Sierakowski |
| Laboratory: | Crystal Growth Laboratory (NL-3) |
| Call/Programme name: | PRELUDIUM 20 |
| Project number: | 2021/41/N/ST5/04518 |
| Implementation date: | 20.01.2022 19.01.2026 |
| Implementing entity: | Institute of High Pressure Physics PAS |
| Total funding granted: | 191 296 PLN |
| Funding for the entity: | 191 296 PLN |
| Funding institution: | National Science Centre |
Project description
PRELUDIUM 20 call for research projects addressed at researchers who are not PhD holders. Maximum funds available in the call amount to 70,000 PLN, 140,000 PLN or 210,000 PLN to finance projects for 12 months, 24 months or 36 months respectively. In the PRELUDIUM project, a research team may comprise up to three members, including the principal investigator and mentor.
Project goal
The main goal of this project is to investigate the crystallization process of free standing HVPE GaN crystals doped with germanium. Germanium is an alternative donor dopant for n-type GaN crystals which permits very high doping level and thus free electrons concentration up to 10²⁰ cm⁻³. Due to the difficulties related with large mismatch between GaN:Ge and pure GaN lattice parameters the growth of such crystals remain a challenge.
International collaboration
none
Key results
Publications
Project results have been published in:
- in progress
Submitted patents
none
Professor
none
PhD theses
none
Master theses
none
Lectures
Project results have been presented by:
- K. Sierakowski, “HVPE GaN:Ge vs Ion-Implanted HVPE GaN: Electrical Properties Investigation”, 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan (12–17 November) – poster presentation.