Characterization of materials and devices
Characterization of materials and devices
Fabrication of materials and structures
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=120 (4 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=100 (12 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=60 (4 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=40 (2 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=20 (5 units)
Characterization of materials and devices
Fabrication of materials and structures
Fabrication of materials and structures
Characterization of materials and devices
Delta Technologies X‑ray goniometer for crystal orientation (3 units)