Projects | Institute of High Pressure Physics Polish PAS

Ongoing projects
Completed

Nitride semiconductor-based green VECSELs – working around the "green gap"

Piotr Perlin
January 2025 January 2028

Multi-junction distributed-feedback laser diodes - synergy of high optical power and single-mode operation

Grzegorz Muzioł
December 2024 December 2027

A new generation of scaffolds based on curdlan and whey protein isolate obtained by electrospinning for the treatment of cartilage, bone and osteochondral defects

Julia Higuchi
October 2024 September 2027

Far ultraviolet laser diodes

Czesław Skierbiszewski
October 2023 September 2027

AlInGaN laser diodes and micro LEDs with active regions shaped as micro ribbons and discs fabricated on corrugated substrates

Anna Kafar
National Science Center
July 2022 July 2027

Mechanisms of Al, Ga, In diffusion in three-dimensional quantum structures of (AlGaIn)N

Michał Leszczyński
June 2023 June 2027

Towards yellow laser diodes with tunable InGaN pseudo-substrate relaxation enabled by nanoporous GaN

Marta Sawicka
June 2024 June 2027

Critical Current Density and Pinning Mechanism in Iron-Based Superconductors Synthesized by High Pressure Technology

Shiv Singh
April 2022 March 2027

Photonic Integrated Circuit Based Single-Output Multi-Wavelengh (In, Al) GaN Monolythic Laser System

Anna Kafar
National Center for Research and Development
March 2023 March 2027

Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superluminescent InGaN/GaN diodes

Grzegorz Staszczak
National Science Center
January 2022 January 2027

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Design, fabrication and properties of ceramic-polymer composites with high dielectric tunability

Sylwester Rzoska
National Science Center
August 2019 July 2023

Influence of build-in piezoelectric fields on performance of nitride laser diodes

Mateusz Hajdel
National Science Center
July 2020 July 2023

Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with highly doped subcontact n-GaN:O layer to n-GaN and AlGaN/GaN HEMT transistors

Monika Masłyk
National Science Center
October 2021 February 2023

Opracowanie unikatowej w skali światowej technologii produkcji drutów nadprzewodzących na bazie MgB2 o zwielokrotnionej wielkości prądu krytycznego do zastosowań w obszarze elektroenergetyki

Andrzej Morawski
Narodowe Centrum Badań i Rozwoju
September 2019 December 2022

Implantacja akceptorów w intencjonalnie niedomieszkowane warstwy GaN wzrastane metodą HVPE - struktury będące podstawą wertykalnych tranzystorów wysokich mocy

Michał Boćkowski
Narodowe Centrum Nauki
September 2019 December 2022

Mikrostrukturalne aspekty umacniania trudnoodkształcalnych stopów cynku przy zastosowaniu niekonwencjonalnej metody wyciskania

Wacław Pachla
National Science Center
September 2017 November 2022

Ujawnianie śladów linii papilarnych nanocząsteczkami wytwarzanymi przy użyciu technologii wysokich ciśnień

Witold Łojkowski
National Center for Research and Development
December 2018 July 2022

Termodynamika i kinetyka syntezy GaN w metalicznych układach stosowanych do krystalizacji diamentu

Izabella Grzegory
Narodowe Centrum Nauki
July 2017 July 2022

A universal process for overcoming the equilibrium crystal shape in crystal growth from the vapor phase

Michał Boćkowski
Foundation for Polish Science
October 2018 June 2022

Terahertz plasma resonance in the grating-gate and fin-shaped channel AlGaN/GaN structures

Pavlo Sai
National Science Center
June 2020 June 2022

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