Project Preludium
„Monolithic bipolar junction transistor driving LED in group III nitrides material system”

Project Description

Stacked transistors with light emitters offer many attractive applications in both ever day life and in research filed. Transistor acting as a switching device allows for high frequency operation of LED without loses on metal interconnectors which are necessary for joining discreet devices. This is crucial for tightly integrated matrices of LED. Conventional matrix of LED needs two electrical leads both of which have to pass high alternating voltage causing crosstalk effect between device. Such matrices were already presented in GaN material system. In case of LED integrated with transistor needs one additional electrical path but now one operates as power supply with constant voltage for the on-state of LED and one as signal path with small alternating switching voltage. Matrices can further enhance both bandwidth and intensity and may find application in inorganic displays market. Such displays may achieve high resolution, colour fidelity, durability and long lifetime compared to popular organic LED (OLED) displays. Proposed monolithic integrated HBT with LED are first step in researches of matrices.

Project value: PLN 210 00,00
Project financed by the National Science Centre under the Preludium program.

Project Goal

The goal of this project is to obtain a platform with bipolar junction transistor which will be monolithically integrated with an LED (see Fig. 1) and to investigate the influence of material and geometric order on device performance.

Figure 1 Schematic summary of the project. First, tunnel junction, transistor and LED will be grown in one process. Second, metal contacts will be put on the device. This results in the circuit where transistor drives a LED.


Project is carried out from 2020 to 2023

Project resulted in the following publications:

  1. Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer
    M. Chlipała, .H. Turski, M. Żak, G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, N. Fiuczek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, C. Skierbiszewski, Appl. Phys. Lett. 120, 171104 (2022);

  2. Nitride light-emitting diodes for cryogenic temperatures
    By: M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski OPTICS EXPRESS, Volume: 28, Issue: 20, Pages: 30299-30308 (2020); 10.1364/OE.403906

  3. Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
    M. Hajdel, M. Chlipala, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Zmuda, C. Skierbiszewski, G. Muziol, MATERIALS Vol: 15 Issue: 1 Article Number:237 (2021) DOI10.3390/ma15010237

  4. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
    K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S, Grzanka, C. Skierbiszewski, T. Suski OPTICS EXPRESS Vol: 29 Issue: 2, pp: 1824-1837 (2021) doi: 10.1364/OE.415258

  5. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, C. Skierbiszewski, Electronics, 9 1481 (2020); 10.3390/electronics9091481

Research Team

Research team of the project

mgr inż. Mikołaj Chlipała
dr Henryk Turski