Stacked transistors with light emitters offer many attractive applications in both ever day life and in research filed. Transistor acting as a switching device allows for high frequency operation of LED without loses on metal interconnectors which are necessary for joining discreet devices. This is crucial for tightly integrated matrices of LED. Conventional matrix of LED needs two electrical leads both of which have to pass high alternating voltage causing crosstalk effect between device. Such matrices were already presented in GaN material system. In case of LED integrated with transistor needs one additional electrical path but now one operates as power supply with constant voltage for the on-state of LED and one as signal path with small alternating switching voltage. Matrices can further enhance both bandwidth and intensity and may find application in inorganic displays market. Such displays may achieve high resolution, colour fidelity, durability and long lifetime compared to popular organic LED (OLED) displays. Proposed monolithic integrated HBT with LED are first step in researches of matrices.
Project value: PLN 210 00,00
Project financed by the National Science Centre under the Preludium program.
The goal of this project is to obtain a platform with bipolar junction transistor which will be monolithically integrated with an LED (see Fig. 1) and to investigate the influence of material and geometric order on device performance.
Project is carried out from 2020 to 2023
Project resulted in the following publications:
Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer
M. Chlipała, .H. Turski, M. Żak, G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, N. Fiuczek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, C. Skierbiszewski, Appl. Phys. Lett. 120, 171104 (2022); DOI.org/10.1063/5.0082297
Nitride light-emitting diodes for cryogenic temperatures
By: M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski OPTICS EXPRESS, Volume: 28, Issue: 20, Pages: 30299-30308 (2020); 10.1364/OE.403906
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
M. Hajdel, M. Chlipala, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Zmuda, C. Skierbiszewski, G. Muziol, MATERIALS Vol: 15 Issue: 1 Article Number:237 (2021) DOI10.3390/ma15010237
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S, Grzanka, C. Skierbiszewski, T. Suski OPTICS EXPRESS Vol: 29 Issue: 2, pp: 1824-1837 (2021) doi: 10.1364/OE.415258
Research team of the project