Mikołaj Chlipała and Henryk Turski the Integrated Nitride Structures Laboratory (NL-16) from the Institute of High Pressure Physics, Polish Academy of Sciences, describe an electrochemical etching method for releasing ultra-thin GaN LED membranes and transferring them onto foreign substrates, including CMOS-compatible ones.
The article is published in Compound Semiconductor (Issue VI 2026). Full article on page 44: https://compoundsemiconductor....