On 30 June 2026 at 12:00 p.m. Dr. Piotr Kruszewski’s habilitation colloquium will take place in the seminar room of the Institute of High Pressure Physics, Polish Academy of Sciences, in Warsaw, at 29/37 Sokołowska Street.
Title of scientific achievement: Cycle of scientific articles related thematically: “Trap states in GaN and AlxGa1−xN layers grown by MOVPE technique on Ammono-GaN substrates studied by the capacitance-related spectroscopic methods”.
The Candidate's application, information about the Habilitation Committee, and the reviews are available here.