Projects | Institute of High Pressure Physics Polish PAS

Ongoing projects
Completed

Metal vacancies, their complexes and clusters in nitride semiconductors

Robert Czernecki
National Science Center
January 2022 January 2027

Pressurized Glassy Materials for Innovative Energy Storage and Conversion

Sylwester Rzoska
January 2023 January 2027

Supersymmetric nitride-based semiconductor lasers

Piotr Perlin
January 2024 January 2027

Point defects in ammonothermal gallium nitride

Marcin Zając
National Science Center
January 2021 January 2027

Single photon light-emitting diodes based on III-nitrides for quantum technologies

Czesław Skierbiszewski
National Science Center
January 2023 January 2027

Bidirectional light-emitting diodes for alternating current operation

Mikołaj Żak
January 2024 January 2027

Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Michał Boćkowski
National Science Center
January 2024 January 2027

Innovative technology for fabricating semi-insulating gallium nitride (GaN) substrates - on the way to p-type substrates

Tomasz Sochacki
The National Centre for Research and Development
January 2024 January 2027

Atomic-level control of AlGaN hetero-interfaces for deep-UV LED

Paweł Kempisty
July 2023 December 2026

Terahertz metasurfaces for detecting viruses and other biological substances

Maciej Sakowicz
December 2021 December 2026

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Monolithic bipolar junction transistor driving LED in group III nitrieds material system

Mikołaj Chlipała
National Science Center
June 2020 June 2024

3D diffusion of impurities in GaN - mechanism and role of defects

Michał Leszczyński
National Science Center
February 2020 May 2024

Buried periodic Arrays of NANOchannels for single-frequency nitride lasers

Marta Sawicka
National Center for Research and Development
August 2021 April 2024

Excitonic design of perovskite LEDs and lasers

Małgorzata Wierzbowska
National Science Center
February 2020 February 2024

Diffuse X-ray Scattering from Local Chemical Inhomogeneities in InGaN- experimental verification of theoretical model

Michał Leszczyński
National Science Center
January 2019 December 2023

Innowacyjne elektrody do procesu drążenia elektroerozyjnego o podwyższonej żywotności

Jacek Skiba
Narodowe Centrum Badań i Rozwoju
January 2021 December 2023

Ultrafioletowe diody laserowe na bazie AlGaInN/GaN

Robert Czernecki
National Center for Research and Development
November 2019 October 2023

Efficiency enhancement in GaN-based blue to blue-violet LDs by engineered nitride-oxide ohmic contacts (OxyGaN)

Piotr Perlin
National Center for Research and Development
September 2020 August 2023

Center for Terahertz Research and Applications - CENTERA

Wojciech Knap
Foundation for Polish Science
September 2018 August 2023

Wpływ defektów na własności przyrządów elektronicznych na bazie GaN

Michał Leszczyński
Narodowe Centrum Badań i Rozwoju
September 2020 July 2023

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