Interdyscyplinarne badania nad integracją aktywnych i pasywnych elementów subterahercowych w jeden monolityczny obwód wykonany w zaawansowanej technologii azotkowej

Our proposal is aimed at conducting interdisciplinary research on integrating passive and active electronic elements into a single chip fabricated using gallium nitride (GaN)-based technology, optimized for efficient operation in the extremely high-frequency (EHF) range above 100 GHz. This study particularly focuses on the sub-terahertz (sub-THz) range (0.1–0.3 THz), which is of great interest in high-frequency (HF) engineering, semiconductor physics, and materials science. Building on the prior work and expertise of the consortium partners [1–3], we propose investigating the integration of a sub-THz system consisting of active and passive components on a GaN substrate within a single technological process. The integration of active and passive elements on a GaN-based chip presents significant challenges due to the fundamentally different electrodynamic and technological requirements for these devices. To address this, our research seeks to explore innovative solutions for combining radiating passive elements, such as planar antennas, with active electronic components, all fabricated on a wide bandgap GaN semi-insulating and low-loss substrate. This substrate would serve both as a semiconductor and a dielectric support for planar antennas. Preliminary results have demonstrated high antenna gain in systems enhanced with metasurfaces, which effectively reduce parasitic surface wave (SW) excitations [3]. These findings form the basis of our hypothesis that integrating antennas surrounded with metasurfaces and thinning GaN substrates to 200 μm can significantly limit SW excitations and improve system performance. The primary objective of this project is to develop design concepts and fabrication processes for sub-THz integrated systems based on GaN technology on high quality ammonothermal substrates. This includes rigorous numerical simulations, experimental validation, and the development of metasurface-enhanced designs. The interdisciplinary nature of this research is underscored by the collaboration between the consortium partners: IHPP PAS – the consortium leader, specializing in semiconductor physics, and WUT, focusing on HF engineering. Together, they bring complementary expertise and methodologies to tackle the complex challenges of integrating passive and active elements. The significance of this project lies in addressing the technological limitations and material challenges associated with sub-THz system development. By leveraging access to high-quality research and development low-loss substrates and advanced fabrication technologies, we aim to pioneer new approaches to GaN-based integration. The expected outcomes include gaining a deeper understanding of the physical and electronic properties of integrated sub-THz circuits and the interactions between active and passive components. Furthermore, this work will contribute to the advancement of wireless technologies, laying the groundwork for systems beyond 5G. An example of a future potential application could be integrated antennas for drone swarm internal communication in the sub-terahertz range, where the integration of the passive and active elements can significantly reduce the weight and increase reliability of the communication module. In conclusion, the broader impact of this project extends to advancing interdisciplinary research and fostering innovation in HF electronics, materials engineering, and applied physics. The proposed integration of passive and active elements into a unified GaN-based technology represents a significant step forward in the development of reliable sub-THz integrated systems.