- Warsaw-4-PhD School
- Doctoral studies
Events
OPUS +LAP for Unipress
Wednesday, 20 November 2024 14:10 |
National Science Center (NCN) announced the results of OPUS 26+LAP/Weave for the bilateral projects conducted with partners in Germany. Dr. Grzegorz Muzioł from MBE Laboratory of our Institute received funding for the project „Multi-junction distributed-feedback laser diodes - synergy of high optical power and single-mode operation”.
The project will develop a completely new optoelectronic device - a multi-junction distributed-feedback laser diode (DFB LD), which is shown schematically in Figure 1. Multi-junction LDs have several pn junctions interconnected with tunnel junctions (TJs). The advantage of this scheme, compared to single junction devices, is that for the same current flow, the recombination occurs in each of the quantum wells (QW). In principle, one can expect an N-fold increase in output power of the multi-junction LD with N sections. This results in differential efficiency (photons per injected electrons) higher than 100%, which comes at the cost of additional voltage required for each section. The DFB grating placed on the surface of the device, as shown in Figure 1, will ensure strong coupling to the optical mode and lasing at only one wavelength – the one that matches the grating. The demonstration of visible multi-junction DFB LDs will open a new field of GaN-based devices and stimulate new research directions. Abstract of the project is available here. The project will be conducted in collaboration between Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS), CEZAMAT Warsaw University of Technology and group of Prof. Ulrich Theodor Schwarz from Technische Universität Chemnitz (TU Chemnitz). Figure 1. (a) A schematic showing the concept of a multi-junction distributed feedback laser diode composed of three sections interconnected with tunnel junctions (TJ). The third order optical mode is drawn with maxima in the three quantum well (QW) regions. The light propagating in the device couples to the DFB grating that is placed on the surface and ensures lasing in a single mode. (b) Schematics of a band diagram for a LD stack (click to enlarge the Figure). A competition for the PostDoc position
Monday, 18 November 2024 18:31 |
Institute of High Pressure Physics PAS opens the competition for PostDoc in the NL10 laboratory X-PressMatter to work in the NCN Project: ‘Pressure-formed glass materials for innovative energy storage and conversion’, ref. NCN: 2022/45/B/ST5/0400; Primary Investigator: Prof. dr hab. Sylwester J. Rzoska. Detailed conditions of the competition are given in the attached announcement. Application deadline: December 15, 2024 at 16:00. The winning candidate will work on innovative materials for the new generation of batteries, both for electrodes and ‘solid’ electrolytes. A special distinguishing feature of the work is the formation of materials using high pressures and the use of advanced implementations for research using broadband electrical impedance. More information are available by e-mail: sylwester.rzoska@gmail.com Dr. Shiv Singh contribution to IBS2app2025
Tuesday, 05 November 2024 12:07 |
Dr. Shiv Singh from our Institute, Laboratory of Superconductors, serves as a program committee member for the 2nd international workshop dedicated on iron-based superconductors “Iron-based Superconductors: Advances towards applications 2025 (IBS2app 2025)”. IBS2app 2025 will be held in Miyazaki, Japan from 13th to 15th February 2025. The IBS2app 2025 offers researchers a platform for scientific discussion and information exchange on iron-based superconductors. Dr. Singh will also deliver an invited talk titled "Review on high pressure growth effect on iron-based superconductors” at this workshop. Dr. Singh's research team has demonstrated that high-pressure growth techniques can effectively improve the superconducting properties and sample quality of high Tc superconductors. This talk will provide a comprehensive overview of the properties of iron-based superconductors by considering different kinds of samples under ambient and high-pressure effects. More details can be found here: https://smartconf.jp/content/ibs2app/speakers Prof. Piotr Perlin elected for the PPTF Board
Friday, 25 October 2024 10:51 |
PPTF - Polish Technological Platform on Photonics elected new authorities for the next two years. The new Board members are:
We wish you fruitful cooperation for the benefit of Polish photonics! (Photo courtesy of Agni Maria Sodul & Maciej J. Nowakowski) |
Unipress Thursday Seminar
Wednesday, 20 November 2024 11:40 |
Material doping without impurity atoms is possible in nitrides due to the presence of polarization gradient in the crystal. The emergence of polarization charges in concentration-graded AlGaN and InGaN materials will be discussed during the next Unipress Thursday Seminar by dr Konrad Sakowski from Laboratory of Nitride Semiconductor Physics, Institute of High Pressure Physics in the talk „Polarization doping in AlGaN and InGaN — numerical simulations”. Additionally, the issue of mobile charges in polarization doped alloys and the potential application of polarization doping for UV heterostructures will be discussed. Join us online via Zoom platform on Thursday, November 28, 2024 at 3:00 pm. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl Abstract of the talk is here. IHPP PAS Seminar on Nitride Semiconductors
Tuesday, 12 November 2024 23:49 |
Dear Ladies and Gentlemen, We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ). The next seminar is unusually scheduled on Tuesday 19.11.2024 at 14:00. Speaker: Prof. Henryk Turski (Institute of High Pressure Physics PAS, Warsaw, Poland) Title: Epitaxy of III-Nitride Devices on Opposite Facets of the Same Polar Crystal Abstract: Link Sincerely, Tadeusz Suski A worldwide celebration of nitride semiconductors - IWN2024
Tuesday, 29 October 2024 10:28 |
This Sunday, November 3, will mark the start of the largest conference on nitride semiconductors, the 12th International Workshop on Nitride Semiconductors (IWN 2024). The conference consists of five thematic symposia: Growth, Characterization/Physics, Optical and Optoelectronics, Electronic Devices, and Nanoscale. The Chair persons of the Growth symposium are Prof. Izabella Grzegory and Prof. Michal Boćkowski from our Institute. The plenary lecture entitled. “Tunnel Junctions for Novel Nitride Optoelectronic Devices” will be given by Prof. Czeslaw Skierbiszewski, head of the MBE Epitaxy Laboratory of IWC PAN. Two employees of the Institute have been asked to give invited papers: Prof. Henryk Turski will speak on “Epitaxy of III-Nitride Devices on Opposite Facets of the Same Polar Crystal: New Perspectives in Materials Engineering” and Dr. Tomasz Sochacki will talk about “Morphological Evolution During Bulk GaN Growth”. A number of other IWC PAN employees will also speak at the conference, presenting the results of their work on nitride semiconductors. Prof. M. Boćkowski will also appear as a panelist at the Rump Session entitled. “Future of III-Nitride Power Electronics”. 10th Workshop on Physics and Technology of Semiconductor Lasers - Summary
Wednesday, 23 October 2024 18:04 |
10th Workshop on Physics and Technology of Semiconductor Lasers was organized this year from 13 to 18 October, 2024 by our Institute in Sopot and chaired by prof. Piotr Perlin. It was a very successful meeting, gathering almost seventy participants with 62 presentations that included 14 invited talks, 29 contributed presentations and 19 posters. Thank you all for the fruitful discussions! Next 11th Workshop on Physics and Technology of Semiconductor Lasers will be organized in 2026 by Lodz University of Technology, and chaired by prof. Tomasz Czyszanowski. We are all looking forward to it! |
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