dr inż. Marcin Siekacz
Marcin Siekacz graduated from Wrocław University of Technology, Faculty of Electronics. He obtained his PhD in 2012 at the Institute of High Pressure PAS under the supervision of prof. Czesław Skierbiszewski. The doctoral thesis entitled "Growth mechanisms and structural properties of GaN/AlGaN/InGaN quantum structures grown by plasma-assited molecular beam epitaxy" is available HERE. Marcin Siekacz is one of the MBE world experts. Together with prof. Skierbiszewski they created and developed the MBE laboratory in the Institute of High Pressure Physics.
Marcin Siekacz co-authored more than 78 scientific publications. In 2015 he was a PostDoc at Paul-Drude Institut in Berlin.
Marcin Siekacz most important achievements are:
- world record 2DEG electron mobilities in GaN/AlGaN quantum structures at 4.2K (109 000 cm2/Vs) and room temperature (2500 cm2/Vs),
- demonstration of first laser diode working in continous wave mode at 410 nm and 60mW optical power,
- green laser optically pumped at 501 nm.
Research interests
Marcin Siekacz is an expert in nitride layers and structures epitaxy by MBE. He fabricates optoelectronic and electronic device structures.
Contact
tel. +48 22 876 0444
lab. +48 22 876 0324
email: msiekacz@unipress.waw.pl