Marta Sawicka, PhD

Marta Sawicka graduated from Warsaw University of Technology with a MSc degree in material science and engineering in 2008 with honors. She received a PhD degree in physics in 2015 in the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) with honors. Now she continues the scientific research work as a member of prof. Czesław Skierbiszewski MBE Laboratory (IHPP PAS) being a leader (PI) of her own research projects.

Marta Sawicka is an expert in plasma-assisted molecular beam epitaxy (PAMBE) and characterization of nitride layers and structures. She was awarded a prestigious scholarship of Ministry of Science and Higher Education in 2013 for outstanding young researchers.

During her PhD work she studied growth mechanisms of GaN, InGaN and AlGaN layers on various crystallographic orientations. That led her to world’s first demonstration of ultraviolet semipolar InGaN light-emitting diodes (LEDs) and laser diodes (LDs) grown by PAMBE. The thesis entitled “Growth mechanisms of GaN, InGaN and AlGaN layers on GaN substrates of various crystallographic orientation studied by plasma-assisted molecular beam epitaxy" is available HERE (in Polish). .

She co-authored more than 45 scientific publications in peer-reviewed journals, leading to a h-index of 13 (isiknowledge.com), 13 (scopus.com).

ORCID 0000-0002-8039-8084

The main scientific accomplishments of Marta Sawicka are:

Research interests

She is interested in modification of optical and structural properties of GaN using electrochemical etching, novel designs of devices. She studies surface morphology and structural properties by various microscopy methods - AFM, TEM, SEM, OM. She collaborates with TopGaN in the area of laser diode research and development.

Research GRANTS

Publication list

  1. Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching, M. Sawicka, N. Fiuczek, H. Turski, G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, P. Wolny, C. Skierbiszewski, Nanoscale, 12 6137 (2020)
  2. Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy,M. Sawicka, N. Fiuczek, P. Wolny, A. Feduniewicz-Żmuda, M. Siekacz, M. Kryśko, K. Nowakowski-Szkudlarek, J. Smalc-Koziorowska, S. Kret, Ž. Gačević, E. Calleja, C. Skierbiszewski, Journal of Crystal Growth, 544 125720 (2020)
  3. Laser Diodes Grown by Molecular Beam Epitaxy, G. Muziol, H. Turski, M. Siekacz, M. Sawicka, C. Skierbiszewski, Nitride Semiconductor Technology, 2020, pp. 301.
  4. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions,M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, C. Skierbiszewski, Electronics, 9 1481 (2020)
  5. Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE, H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, A. Reszka, B. Kowalski, M. Kryśko, P. Wolny, J. Smalc-Koziorowska, M. Siekacz, G. Muzioł, K. Nowakowski-Szukudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth, 512 208 (2019)
  6. Stack of two III-nitride laser diodes interconnected by a tunnel junction, M. Siekacz, G. Muziol, M. Hajdel, M. Żak, K. Nowakowski-Szkudlarek, H. Turski, M. Sawicka, P. Wolny, A. Feduniewicz-Żmuda, S. Stanczyk, J. Moneta, C. Skierbiszewski, Optics Express, 27 5784 (2019)
  7. Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices, P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski, Journal of Applied Physics, 124 065701 (2018)
  8. C. Skierbiszewski, H. Turski, M. Zak, K. Nowakowski-Szkudlarek, G. Muziol, M. Siekacz, A. Feduniewicz-Zmuda, M. Sawicka, 2018 76th Device Research Conference (DRC), 2018, pp. 1.
  9. True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy, C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, P. Perlin, Applied Physics Express, 11 034103 (2018)
  10. InGaN Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy, C. Skierbiszewski, M. Grzegorz, H. Turski, S. Marcin, M. Sawicka, Handbook of Solid-State Lighting and LEDs, CRC Press, 2017, pp. 321
  11. Comparative study of semipolar (20-21), nonpolar (10-10) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy, M. Sawicka, P. Wolny, M. Kryśko, H. Turski, K. Szkudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth, 465 43 (2017)
  12. Indium incorporation in semipolar and nonpolar InGaN grown by plasma assisted molecular beam epitaxy, M. Sawicka, A. Feduniewicz-Żmuda, M. Kryśko, H. Turski, G. Muziol, M. Siekacz, P. Wolny, C. Skierbiszewski, Journal of Crystal Growth, 459 129 (2017)
  13. Miscut dependent surface evolution in the process of N-polar growth under N-rich condition, F. Krzyżewski, M.A. Załuska-Kotur, H. Turski, M. Sawicka, C. Skierbiszewski, Journal of Crystal Growth, 457 38 (2016).
  14. Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy, M. Sawicka, M. Kryśko, G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Smalc-Koziorowska, C. Skierbiszewski, Journal of Applied Physics, 119 185701 (2016)
  15. Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m -plane GaN surfaces to vacuum and air ambient, Ł. Janicki, M. Ramírez-López, J. Misiewicz, G. Cywiński, M. Boćkowski, G. Muzioł, C. Chèze, M. Sawicka, C. Skierbiszewski, R. Kudrawiec, Japanese Journal of Applied Physics, 55 05FA08 (2016)
  16. Surface potential barrier in m -plane GaN studied by contactless electroreflectance, L. Janicki, J. Misiewicz, G. Cywiński, M. Sawicka, C. Skierbiszewski, R. Kudrawiec, Applied Physics Express, 9 021002 (2016)
  17. Cyan laser diode grown by plasma-assisted molecular beam epitaxy, H. Turski, G. Muziol, P. Wolny, S. Grzanka, G. Cywiński, M. Sawicka, P. Perlin, C. Skierbiszewski, Applied Physics Letters, 104 023503 (2014)
  18. AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy, C. Skierbiszewski, H. Turski, G. Muziol, P. Wolny, G. Cywiński, S. Grzanka, J. Smalc-Koziorowska, M. Sawicka, P. Perlin, Z.R. Wasilewski, S. Porowski, Journal of Vacuum Science & Technology B, 32 (2014)
  19. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy, C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z.R. Wasilewski, S. Porowski, Journal of Physics D: Applied Physics, 47 073001 (2014)
  20. Semipolar (20-21) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy, M. Sawicka, G. Muziol, H. Turski, A. Feduniewicz-Żmuda, M. Kryśko, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski, Journal of Vacuum Science & Technology B, 32 02C115 (2014)
  21. True-blue laser diodes grown by plasma-assisted MBE on bulk GaN substrates, G. Muziol, H. Turski, M. Siekacz, P. Wolny, M. Sawicka, S. Grzanka, P. Perlin, T. Suski, Z.R. Wasilewski, I. Grzegory, S. Porowski, C. Skierbiszewski, physica status solidi (c), 11 666 (2014)
  22. Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers, H. Turski, M. Siekacz, Z.R. Wasilewski, M. Sawicka, S. Porowski, C. Skierbiszewski, Journal of Crystal Growth, 367 115 (2013)
  23. MBE fabrication of III-N-based laser diodes and its development to industrial system, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Perlin, Z.R. Wasilewski, S. Porowski, Journal of Crystal Growth, 378 278 (2013)
  24. Ultraviolet laser diodes grown on semipolar (20-21) GaN substrates by plasma-assisted molecular beam epitaxy, M. Sawicka, G. Muziol, H. Turski, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, J.L. Weyher, C. Cheze, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski, Applied Physics Letters, 102 251101 (2013)
  25. Growth mechanisms in semipolar and nonpolar m-plane AlGaN/GaN structures grown by PAMBE under N-rich conditions, M. Sawicka, C. Chèze, H. Turski, J. Smalc-Koziorowska, M. Kryśko, S. Kret, T. Remmele, M. Albrecht, G. Cywiński, I. Grzegory, C. Skierbiszewski, Journal of Crystal Growth, 377 184 (2013)
  26. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (20-21) substrates, M. Sawicka, C. Cheze, H. Turski, G. Muziol, S. Grzanka, C. Hauswald, O. Brandt, M. Siekacz, R. Kucharski, T. Remmele, M. Albrecht, M. Krysko, E. Grzanka, T. Sochacki, C. Skierbiszewski, Applied Physics Letters, 102 111107 (2013)
  27. Determination of gain in AlGaN cladding free nitride laser diodes, G. Muziol, H. Turski, M. Siekacz, M. Sawicka, P. Wolny, P. Perlin, C. Skierbiszewski, Applied Physics Letters, 103 061102 (2013)
  28. Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy, R. Kudrawiec, L. Janicki, M. Gladysiewicz, J. Misiewicz, G. Cywinski, M. Bockowski, G. Muziol, C. Cheze, M. Sawicka, C. Skierbiszewski, Applied Physics Letters, 103 052107 (2013)
  29. Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy, G. Cywinski, R. Kudrawiec, L. Janicki, J. Misiewicz, C. Cheze, M. Siekacz, M. Sawicka, P. Wolny, M. Bockowski, C. Skierbiszewski, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 31 03C112 (2013)
  30. Step-flow growth mode instability of N-polar GaN under N-excess, C. Cheze, M. Sawicka, M. Siekacz, H. Turski, G. Cywinski, J. Smalc-Koziorowska, J.L. Weyher, M. Krysko, B. Lucznik, M. Bockowski, C. Skierbiszewski, Applied Physics Letters, 103 071601 (2013)
  31. True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Wolny, G. Cywinski, L. Marona, P. Perlin, P. Wisniewski, M. Albrecht, Z.R. Wasilewski, S. Porowski, Applied Physics Express, 5 112103 (2012)
  32. AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z.R. Wasilewski, S. Porowski, Applied Physics Express, 5 022104 (2012)
  33. Waveguide Design for Long Wavelength InGaN Based Laser Diodes, G. Muziol, H. Turski, M. Siekacz, M. Sawicka, P. Wolny, C. Cheze, G. Cywinski, P. Perlin, C. Skierbiszewski, Acta Physica Polonica A, 122 1031 (2012).
  34. InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, P. Perlin, S. Grzanka, Z. R. Wasilewski, R. Kucharski, S. Porowski, J. Vac. Sci. Technol. B 30, (2012) doi:10.1116/1.3665223
  35. InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy, C. Skierbiszewski, M. Siekacz, H. Turski, M. Sawicka, A. Feduniewicz-Żmuda, P. Perlin, T. Suski, Z. Wasilewski, I. Grzegory, S. Porowski, Lithuanian Journal of Physics (accepted)
  36. Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy, M. Siekacz, M. Sawicka, H. Turski, G. Cywiński, A. Khachapuridze, P. Perlin, T. Suski, M. Boćkowski, J. Smalc-Koziorowska, M. Kryśko, R. Kudrawiec, M. Syperek, J. Misiewicz, Z. Wasilewski, S. Porowski, and C. Skierbiszewski, J. Appl. Phys. 110, 063110 (2011); doi:10.1063/1.3639292
  37. Step-flow anisotropy of the m-plane GaN (1-100) grown under nitrogen-rich conditions by PAMBE, Marta Sawicka, Henryk Turski, Marcin Siekacz, Julita Smalc-Koziorowska, Marcin Kryśko, Igor Dzięcielewski, Izabella Grzegory, and Czesław Skierbiszewski, Phys. Rev. B 83, 245434 (2011); doi:10.1103/PhysRevB.83.245434
  38. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates, Julita Smalc-Koziorowska, Marta Sawicka, Thilo Remmele, Czeslaw Skierbiszewski, Izabella Grzegory and Martin Albrecht, Appl. Phys. Lett. 99, 061901 (2011); doi:10.1063/1.3622642
  39. High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy, Marta Sawicka, Anna Feduniewicz-Żmuda, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Marcin Kryśko, Igor Dzięcielewski, Izabella Grzegory, and Czesław Skierbiszewski, J. Vac. Sci. Technol. B 29, 03C135 (2011); doi:10.1116/1.3589228
  40. Growth mechanism of InGaN by Plasma Assisted Molecular Beam Epitaxy, H. Turski, M. Siekacz, M. Sawicka, G. Cywinski, M. Krysko, S. Grzanka, J. Smalc-Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, C. Skierbiszewski, J. Vac. Sci. Technol. B 29, 03C136 (2011); doi:10.1116/1.3590932
  41. Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications, Agnieszka Kaminska, Igor Dzięcielewski, Jan L. Weyher, Jacek Waluk, Sylwester Gawinkowski, Volodymyr Sashuk, Marcin Fiałkowski, Marta Sawicka, Tadeusz Suski, Sylwester Porowski and Robert Hołyst, J. Mater. Chem., 21, 8662-8669 (2011), doi: 10.1039/C0JM03336G
  42. Broadening of intersubband transitions in InGaN/AlInN multi quantum wells, G. Cywiński, M. Gladysiewicz, R. Kudrawiec, M. Kryśko, A. Feduniewicz-Żmuda, M. Siekacz, M. Sawicka, P. Wolny, J. Smalc-Koziorowska, L. Nevou, M. Tchernycheva, F. H. Julien, J. Misiewicz, C. Skierbiszewski, J. Vac. Sci. Technol. B 28, C3B17 (2010); doi:10.1116/1.3319325,
  43. InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE, M. Siekacz, M. Ł. Szańkowska, A. Feduniewicz-Zmuda, J. Smalc-Koziorowska, G. Cywiński, S. Grzanka, Z. R. Wasilewski, I. Grzegory, B. Łucznik, S. Porowski, C. Skierbiszewski, Phys. Status Solidi C 6, No. S2, S917–S920 (2009) / DOI 10.1002/pssc.200880973
  44. Influence of Ti on the Mechanical Properties of AgCuInTi Active Brazing Fillers, M. Galli, J. Janczak-Rusch, Marta Szankowska, Advanced Engineering Materials 11, No. 1-2, (2009), DOI: 10.1002/adem.200800310

Contact

tel. +48 22 876 0305
lab. +48 22 876 0324
email: sawicka@unipress.waw.pl


ORCID: 0000-0002-8039-8084