Institute of High Pressure Physics

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

This time on Friday 20.09.2024 we have the pleasure to listen to two talks at: 10:30 and 14:00.

Speaker I (10:30): Dr. Takuya Maeda (University of Tokyo, Japan)

Title: Franz-Keldysh effect in GaN, 4H-SiC and β-Ga2O3

Abstract: Link

Speaker II (14:00): Dr . Yoshinobu Matsuda (Kyoto University, Japan)

Title: Multicolor InGaN LEDs on artificially defined microstructures

Abstract: Link

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

The Warsaw Doctoral School in Natural and Biomedical Sciences and the Institute of High Pressure Physics PAS cordially invites you to a SPOTLIGHT TALK

"Surface-emitting lasers" given by Prof. Åsa Haglund from Chalmers University of Technology, Göteborg, Sweden.

When and where: Friday, September 13, 2024, 10:30 (duration: 60 min + more) at the IHPP PAS al. Prymasa Tysiąclecia 98, seminar room 2nd floor and online via Zoom. Abstract and the link to Zoom meeting are available in this file.

The Warsaw Doctoral School in Natural and Biomedical Sciences and the Institute of High Pressure Physics PAS cordially invites you to a SPOTLIGHT TALK

"Membrane external-cavity surface-emitting lasers (MECSELs): State of the art and a glimpse into the future" given by Dr. Hermann Kahle from University of New Mexico, Albuquerque, United States

When and where: Tuesday, August 20, 2024, 15:30 (duration: 60 min + more) at the IHPP PAS al. Prymasa Tysiąclecia 98, seminar room 2nd floor and online via Zoom. Abstract and the link to Zoom meeting are available in this file.

Selective area doping is used in semiconductors to locally change their electrical properties. After implantation, thermal treatment is required to activate dopant atoms and remove post-implantation damage in the crystallographic structure. Annealing process of GaN is challenging due to unwanted material thermal decomposition above 800°C.

In the Unipress Doctoral Seminar, Kacper Sierakowski, MSc from Crystal Growth Laboratory, Institute of High Pressure Physics will present the talk „Diffusion of acceptors in ion implanted gallium nitride grown by halide vapor phase epitaxy”.

The presentation will summarize the main results of his PhD thesis. He will discuss the application of ultra-high-pressure annealing (UHPA) for efficient electrical activation of ion implanted GaN and remarkable structural recovery. A strong dependence of diffusion on the crystallographic orientation and impurities composition was observed for all analyzed acceptor dopants.

Join us online via Zoom platform on Thursday, August 22, 2024 at 3:00 p.m. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl

Abstract of the talk is here.