We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a remote mode through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is scheduled on Tuesday15.04.2025 at 15:00 CEST.
Speaker: Anat Siddharth (Laboratory of Photonics and Quantum Measurements, EPFL, Lausanne, Switzerland)
We are pleased to invite you to a joint seminar at IHPP PAS between Doctoral Seminars and Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The talk is scheduled on Tuesday08.04.2025 at 15:00 CET.
Speaker: Muhammed Aktaş(Institute of High Pressure Physics PAS, Warsaw, Poland)
Title: Polarization Doping: A Method to Improve the Performance of InGaN-Based Laser Diodes and Light-Emitting Diodes
We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a remote mode through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is scheduled on Tuesday01.04.2025 at 15:00 CET.
Speaker: Prof. Dr. Oliver Ambacher (Institute for Sustainable Systems Engineering (INATECH),University Freiburg, Germany)
Title: Piezo-acoustic components based on metal nitride layers
We are pleased to invite you to a joint seminar at IHPP PAS between Doctoral Seminars and Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The talk is scheduled on Tuesday11.03.2025 at 14:00 CET.
Speaker: Mateusz Hajdel(Institute of High Pressure Physics PAS, Warsaw, Poland)
Title: Operating principle of wide (In,Ga)N quantum wells grown by plasma assisted molecular beam epitaxy