Material doping without impurity atoms is possible in nitrides due to the presence of polarization gradient in the crystal. The emergence of polarization charges in concentration-graded AlGaN and InGaN materials will be discussed during the next Unipress Thursday Seminar by dr Konrad Sakowski from Laboratory of Nitride Semiconductor Physics, Institute of High Pressure Physics in the talk „Polarization doping in AlGaN and InGaN — numerical simulations”. Additionally, the issue of mobile charges in polarization doped alloys and the potential application of polarization doping for UV heterostructures will be discussed.
Join us online via Zoom platform on Thursday, November 28, 2024 at 3:00 pm. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl
Development of bioabsorbable metals is of great importance since they can be used to produce temporary implants, replacing permanent ones, and thus limiting some harmful side-effects related to their long-term presence in a patient body. One of the most promising materials for such an application is zinc (Zn) due to its optimal corrosion rate. However, the mechanical properties of pure zinc are far from being acceptable for a proposed application. Alloying with other elements and additional plastic deformation such as hydrostatic extrusion (HE) can significantly improve material strength thus enabling applications for orthopedic fixtures such as bone screw implants.
Institute of High Pressure Physics PAS invites you to its Unipress Thursday Seminar that will be given by dr inż. Jacek Skiba from Laboratory of Plastic Deformation Under High Pressure, Institute of High Pressure Physics. The talk is titled „Advanced zinc alloys for biomedical applications - Effect of plastic deformation by hydrostatic extrusion method on microstructure, mechanical and functional propertiess”
Join us online via Zoom platform on Thursday, October 31, 2024 at 3:00 pm. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl
Would you like to know what is needed to grow InGaN at higher temperatures in MBE not loosing on the indium content? And how these new growth conditions impact InGaN optical quality? What are the advantages of the MBE technology in the growth of III-nitride heterostructures? And how to benefit from them for the fabrication of such devices as light emitting devices operating in both forward and reverse bias, distributed feedback laser diodes with high spectral purity, or stacks of laser diodes for high power operation, just to name a few.
These subjects will be covered during the next Unipress Thursday Seminar by dr inż. Grzegorz Muzioł from MBE Laboratory, Institute of High Pressure Physics in the talk „Growth of InGaN by MBE: current status, opportunities and challenges”
Join us online via Zoom platform on Thursday, June 27, 2024 at 3:00 pm. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl
More than 40 years ago, a new direction in physics opened up with the arrival of plasma-wave electronics. The possibility that the plasma waves could propagate faster than electrons fascinated all. Therefore, it was initially expected that plasmonic devices, including detectors and generators of electromagnetic radiation, would be able to work effectively in the very high frequencies - terahertz (THz) range, inaccessible to standard electronic devices. However, numerous experimental attempts to realize the amplifiers or emitters failed: the intensity of radiation turned out to be too small, plasma resonances too broad, or devices operated only at cryogenic temperatures.
This fascinating subject will be discussed during next Unipress Thursday seminar by the awardee of the ERC Advanced Grant Prof. Wojciech Knapfrom our Institute CENTETRA Laboratories in a talk "Plasmonic Crystals in Graphene and GaN for Terahertz Active Devices”.