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ISGN-8 concluded – first Iwińska Award for Young Scientists presented

Sunday, 16 November 2025 23:23 |

The 8th International Symposium on Growth of III-Nitrides (ISGN-8) has just come to a close. The conference was held on 9–12 November 2025 at National Cheng Kung University (NCKU) in Tainan, Taiwan. This year, for the very first time, the Iwińska Award for Young Scientists was presented – a prize funded by the Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS / Unipress), established in memory of Dr. Iwińska, a young physicist who passed away a year ago after battling cancer.

The award for the best presentation went to Pham Tu Huynh, a young researcher from Vietnam studying at NCKU. The laureate presented a talk entitled “Defect visualization in GaN-based HEMTs with SiNx nano-mask by cathodoluminescence spectroscopy”, recognized for its scientific quality and impact on the development of GaN-based device technologies.

We are already looking ahead to the next edition – ISGN-9, which will be organized by IHPP PAS together with Epistromo. The symposium will take place on September 27-30, 2027 in Burgas, Bulgaria. We warmly invite you to join us at ISGN-9!

More photos from the Award Ceremony and the ISGN8 Conference below:

Quantum statistics effects in surface diffusion

Thursday, 13 November 2025 16:34 |

In the recent paper by Paweł Strak, Cyprian Sobczak and Stanislaw Krukowski „Quantum statistics effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface” published in Physical Chemistry Chemical Physics, 2025, 27, 23996-24016, authors from our Institute have demonstrated that quantum statistics effects play an important role in nitrogen adatom diffusion over partially Ga-covered GaN(0001) surfaces. This is partially related to the bonding in both the initial and activated complex states. Additionally, the diffusion energy barrier may be changed owing to the quantum statistics of electrons governed by the Fermi energy, as shown in the case of nitrogen diffusion over a clean and gallium-covered Ga-terminated GaN(0001) surface.

Energies of the quantum states of the nitrogen adatom and next nearest neighboring (nnn) gallium atoms states in the (2√3x2√3) slab representing clean GaN(0001) surface with single N adatom located in H3 site. The indices 1, 2 and 3 correspond to the nearest neighboring Ga atoms (tetrahedron) located in the basis of the tetrahedron. The panels represents, from the left: energy of the quantum states in the momentum space, projected density of states (PDOS) of the N and Ga atoms, and the right two panel - Crystal Orbital Hamilton Population (COHP).

Collaborative Study with AIST Japan Advances Iron-Based Superconductors

Tuesday, 04 November 2025 15:31 |

In collaboration with the National Institute of Advanced Industrial Science and Technology (AIST), Japan, Prof. Shiv J. Singh’s research team has successfully investigated the influence of the cubic anvil high-pressure (CA-HP) technique on the superconducting properties of iron-based superconductors.

In this study, SmFeAsO_0.8F_0.2 (Sm1111) bulk superconductors were synthesized using the CA-HP method, and the effects of growth pressure on their superconducting properties were systematically examined. The findings revealed that ex-situ CA-HP synthesis under optimized conditions at 0.5 GPa significantly enhanced the critical current density (J_c) by an order of magnitude without altering the critical temperature (T_c). In contrast, in-situ synthesis at higher pressure and temperature conditions (4 GPa, 1400 °C, 1 h) led to a 3 K increase in T_c while maintaining strong J_c performance compared to the parent Sm1111 sample. These results demonstrate the effectiveness of the CA-HP technique as a powerful approach for optimizing and tailoring superconducting properties in iron-based superconductors.

For more details, please refer to the publication: Mohammad Azam, Tatiana Zajarniuk, Hiraku Ogino, and Shiv J. Singh entitled “Optimization of superconducting properties of F-doped SmFeAsO by cubic anvil high-pressure technique” Materials Research Express 12, 116001 (2025) (IOP Publishing). https://doi.org/10.1088/2053-1591/ae1719

Figure: Schematic illustration of (a) a typical heating temperature-time profile for the growth of SmFeAsO_0.80F_0.20 (b) the high-pressure cubic anvil apparatus, and (c) the sample cell assembly, consisting of a pyrophyllite cube, graphite sleeve, boron nitride (BN) sample crucible, pyrophyllite pellets, and graphite disks.

Polish-German Weave-UNISONO project for the research on iron-based superconducting thin films

Wednesday, 22 October 2025 10:54 |

Scientists from the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) and the Karlsruhe Institute for Technology (KIT) have received a Weave-UNISONO grant for research on iron-based superconductors (FBS). The results of the project call have been just announced by National Science Center.

The Polish team, led by Dr. hab. Shiv Jee Singh from IHPP PAS, and the German team, led by Dr. Jens Hänisch from KIT, will combine their knowledge and skills to develop a unique method for the fabrication of new and improved properties FBS layers by the synergy of conventional thin-film deposition techniques with high-pressure techniques.

FBS superconductors bridge the gap between high-temperature copper-based superconductors and classic low-temperature superconductors. Determining phase diagrams and understanding the correlation between fabrication conditions and properties is crucial for fundamental research, as well as for harnessing the potential of these materials in practical applications.

The project details are summarized in the abstract.

More information about the Weave-UNISONO competition can be found at the NCN website link. The Weave-UNISONO competition is open on an ongoing basis. Funding is available for collaborations with partners from Austria, the Czech Republic, Slovenia, Switzerland, Germany, Luxembourg, and Belgium-Flanders.

WBG Pilot Line - Polish Node

Thursday, 13 November 2025 16:44 |

Today, November 13, 2025, the inauguration of the European Wide Band Gap Semiconductors Pilot Line – Polish Node project took place in the Leonard Sosnowski Auditorium of the Institute of Physics PAS. The event was organized by the Łukasiewicz Institute of Microelectronics and Photonics. The first European-level WBG Pilot Line project meeting took place on October 1, 2025, in Rome.

Today's event officially inaugurates the Polish node within the European Wide Band Gap Semiconductor Pilot Line, implemented as part of the Chips Joint Undertaking.

Two Polish institutes are involved: the Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS) and Łukasiewicz Institute of Microelectronics and Photonics (IMiF). The project's objectives include developing production lines for 4-inch GaN substrates, improvement of existing technologies for epitaxial growth and processing of nitride structures for high-power devices, and advancement of new types of diodes and transistors.

The meeting included a lecture by Professor Tetsuo Narita from Toyota Central R&D Labs and Nagoya University, the symbolic unveiling of a time capsule, and presentations by the project partners.

Prof. Wojciech Knap – laureate of the Foundation for Polish Science Prize 2025

Wednesday, 05 November 2025 11:36 |

We are pleased to announce that Prof. Wojciech Knap from the Institute of High Pressure Physics PAS has become a laureate of the 2025 Foundation for Polish Science Prize in the field of mathematical, physical and engineering sciences. This distinction – often referred to as the “Polish Nobel Prize” – is considered the most prestigious scientific award in Poland.

The Prize was awarded for his pioneering development of new methods for detecting, amplifying and generating terahertz waves, which pave the way for ultra-fast wireless communication and a wide range of THz radiation applications in medicine, industry and telecommunications. Prof. Knap’s scientific achievements significantly strengthen Poland’s position among the world leaders in terahertz technology research.

Since 2013, Prof. Knap has been affiliated with the Institute of High Pressure Physics PAS, where he established the Terahertz Radiation Laboratory. On his initiative, the CENTERA Terahertz Research and Applications Center at IWC PAS was created, as well as CENTERA2 operating at the CEZAMAT Centre of the Warsaw University of Technology. These centres conduct advanced basic and application-oriented research on terahertz phenomena, co-financed, among others, by the Foundation for Polish Science.

The official award ceremony will take place on 3 December this year in Warsaw.

We warmly congratulate Professor Knap and the entire team of the Terahertz Radiation Laboratory and CENTERA, and wish them continued outstanding scientific success.

IHPP PAS at ISGN-8

Friday, 31 October 2025 12:03 |

Researchers from the Institute of High Pressure Physics, Polish Academy of Sciences (IWC PAS / Unipress) will take part in the 8th International Symposium on Growth of III-Nitrides (ISGN-8), held at National Cheng Kung University in Tainan, Taiwan, on 9–12 November 2025.

The Institute’s Director, prof. Michał Boćkowski, will deliver an invited lecture in Session S1 “III-N Bulk Crystal Growth,” titled “The Science and Art of GaN Crystal Growth.”

This year ISGN-8 will also inaugurate the Iwińska Award – Best Student Presentation, established in memory of Dr. Małgorzata Iwińska (1985–2024), a brilliant GaN-growth specialist from IHPP PAS. The award—sponsored by IHPP PAS—recognizes excellence among student presenters and commemorates Dr. Iwińska’s scientific achievements and support for young researchers.

IHPP PAS received a prestigious FNP grant IRA

Thursday, 09 October 2025 22:36 |

The Foundation for Polish Science (FNP) has awarded the Institute of High Pressure Physics PAS funding to develop the Centre for Physics and Technology of Nitride Semiconductors “GaN-Unipress.” The International Research Agendas Programme (IRAP FENG) focuses on industrial research and experimental development (basic research is not funded).

Leadership and structure
Project integrates the full spectrum of activities "from material to specific device" in one dedicated center. The IRAP Director is Prof. Michał Boćkowski (IHPP PAS), who also leads WP3. Work-package leaders are: Dr Robert Kucharski (WP1), Dr Tomasz Sochacki (WP2), and Assoc. Prof. Paweł Kempisty (WP4).

The project encompasses four research areas, forming a complete value chain – from material to device and design algorithms:

• WP1: Ammonothermal GaN crystal growth and high-quality substrates (targeting 4-inch GaN).
• WP2: GaN-on-GaN power diodes (p-n, p-i-n, Schottky/JBS) with low losses and high breakdown voltages.
• WP3: Rare-earth-doped GaN as a platform for single-photon sources and quantum sensors, leveraging the proprietary ion implantation + ultra-high-pressure annealing (I/I+UHPA) route.
• WP4: Materials informatics — AI/ML for growth, device design and diagnostics.

Key partnerships
The project will be supported by strong partnerships. WP3 will be developed with the Solid-State Physics Division, Faculty of Physics, University of Warsaw, while WP4 is supported by the AI and Computational Methods Division, Faculty of Mathematics and Information Science, Warsaw University of Technology. Our strategic international partner is CNR-IMM, Italy (Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi), including the team of Dr Fabrizio Roccaforte.

Impact
By integrating state-of-the-art GaN materials and devices with AI-driven optimisation, “GaN-Unipress” will accelerate advances in power electronics and quantum technologies with strong pathways to commercialisation, strengthening Poland’s position on the global map of nitride semiconductor research.

Find out more about the IRA Programme and Call 2/2025 results.

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