We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a remote mode – through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is unusually scheduled on Monday 11.03.2024 at 14:00.
Speaker: Prof. Thierry Guillet (Laboratoire Charles Coulomb (L2C), Montpellier University and CNRS, France)
We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is unusually scheduled on Tuesday 05.03.2024 at 14:00.
Speaker: Prof. Takao Oto (Department of Informatics and Electronics, Yamagata University, Japan)
Title: Red emission enhancement from InGaN based emitters using hybrid nanostructures
We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is scheduled on Monday 05.02.2024 at 14:00.
Speaker: Prof. Barbara Piętka (Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland)
Title:Exciton-polaritons for optical neural networks
We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is scheduled on Monday 22.01.2024 at 14:00.
Speaker: Prof. Jacek M. Baranowski (Institute of Microelectronics and Photonics, Łukasiewicz Research Network, Poland)
Title: Elimination of threading dislocations by boron induced micro voids in BGaN