Institute of High Pressure Physics

It is with deep regret and sadness that we announce the passing of Małgorzata Iwińska, Ph.D., a graduate of the Faculties of Physics at Warsaw University and Warsaw University of Technology, on August 21, 2024; a highly regarded and respected specialist in semiconductors crystal growth.

Gosia will remain forever in our hearts and thoughts. Her passing is a great loss to the scientific world, as well as to all who had the honor of knowing and working with her.

Malgosia was a person full of passion, commitment and dedication to her work. Her contributions to science and technology will long be remembered.

Rest in peace, Gosia.

Colleagues of IHPP PAS

Plastically relaxed InGaN layers are a promising prospect for bulk substrates with a lattice constant larger than that of GaN substrates. Research on such structures is ongoing in the NL-12 laboratory. We are pleased to announce the recent publication of the article by J. Moneta et al. "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" in the prestigious journal Acta Materialia, where the authors describe the effect of GaN substrate misorientation on the strain relaxation processes of InGaN layers. The study shows that commonly used procedure for assessing the degree of relaxation in wurtzite epitaxial layers can lead to significant measurement errors and misleading conclusions. Due to the lattice deformations that occur, advanced XRD characterization is required. We encourage you to read the full article.

Fundacja na rzecz Nauki Polskiej ogłosiła wczoraj wyniki pierwszego naboru wniosków (1/2023) w działaniu FIRST TEAM finansowanym z programu Fundusze Europejskie dla Nowoczesnej Gospodarki (FENG).

Projekt dr inż. Grzegorza Muzioła „Monolityczna integracja wielokolorowych matryc mikro- i nano-LEDów” został bardzo wysoko oceniony i znalazł się na liście 27 dofinansowanych projektów (złożono 202 projekty, współczynnik sukcesu: 13,36%). Projekt będzie realizowany w Laboratorium Epitaksji MBE w Instytucie Wysokich Ciśnień PAN. Gratulujemy!

Działanie FIRST TEAM umożliwia zdobycie finansowania na założenie zespołu badawczego i prowadzenie w Polsce innowacyjnych badań z potencjałem aplikacyjnym. Więcej o programie i wynikach na stronie FNP.

Magnetic or nonmagnetic substitution generally plays a significant role on the properties of a superconductor. It can induce disorder into the crystal, produce the impurity scattering, and cause a Cooper pairbreaking effect. Recently, Dr. Singh's research team from NL-6 has published a research paper that explores the non-magnetic Cu impurity effect on the high T_c iron-based superconductor through various types of measurements and analysis, including DFT calculations. This study concludes that the substitution of Cu in the superconducting FeAs layer results in the enlargement of the lattice volume and is a source of strong disorder scattering that leads to the suppression of superconducting properties and the emergence of a metal-to-insulator transition.

This paper is published by M. Azam, M. Manasa, T. Zajarniuk, T. Palasyuk, R. Diduszko, T. Cetner, A. Morawski, C. Jastrzebski, M. Wierzbicki, A. Wiśniewski, Shiv J. Singh entitled “Copper doping effects on the superconducting properties of Sm-based oxypnictides” J. Am. Ceram. Soc. 2024;1–15. https://doi.org/10.1111/jace.19936

Fig. The variation of (A) the onset transition temperature (T_c^onset), (B) the transition width (ΔT = T_c^onset – T_c^offset), and (C) Residual resistivity ratio (RRR = ρ_{300 K}/ρ_{60 K}) of SmFe_1−xCu_xAsO_0.8F_0.2 with the nominal doping contents (x) compared to the reported Ni and Ru doping contents.