Institute of High Pressure Physics

The Editors of Applied Physics Letters featured recently published article resulting from the collaboration of the Institute of High Pressure Physics PAS (Warsaw) and Leibniz-Institut fur Kristallzuchtung (Berlin).

P. Kruszewski, A. Fiedler, Z. Galazka; The electric field influence on E_C-0.18 eV electron trap level in (100)-oriented β-Ga₂O₃ crystals grown by the Czochralski method. Appl. Phys. Lett. 126 (6): 062110, 2025. https://doi.org/10.1063/5.0251567

In this study, we have shown that the electron trap level typically observed at Ec-0.18 eV in Czochralski-grown β-Ga2O3 crystals is actually a superposition of two distinct electron levels with closely matched activation energies, specifically Ec-0.196 eV and Ec-0.209 eV. Moreover, both trap states were found to be donors. This significant finding was achieved using the high-resolution Laplace DLTS technique, combined with carefully optimized experimental conditions.