Institute of High Pressure Physics

This Sunday, November 3, will mark the start of the largest conference on nitride semiconductors, the 12th International Workshop on Nitride Semiconductors (IWN 2024).

The conference consists of five thematic symposia: Growth, Characterization/Physics, Optical and Optoelectronics, Electronic Devices, and Nanoscale. The Chair persons of the Growth symposium are Prof. Izabella Grzegory and Prof. Michal Boćkowski from our Institute.

The plenary lecture entitled. “Tunnel Junctions for Novel Nitride Optoelectronic Devices” will be given by Prof. Czeslaw Skierbiszewski, head of the MBE Epitaxy Laboratory of IWC PAN.

Two employees of the Institute have been asked to give invited papers: Prof. Henryk Turski will speak on “Epitaxy of III-Nitride Devices on Opposite Facets of the Same Polar Crystal: New Perspectives in Materials Engineering” and Dr. Tomasz Sochacki will talk about “Morphological Evolution During Bulk GaN Growth”. A number of other IWC PAN employees will also speak at the conference, presenting the results of their work on nitride semiconductors. Prof. M. Boćkowski will also appear as a panelist at the Rump Session entitled. “Future of III-Nitride Power Electronics”.