Unipress Doctoral Seminar
| Seminars - Ogólne |
Selective area doping is used in semiconductors to locally change their electrical properties. After implantation, thermal treatment is required to activate dopant atoms and remove post-implantation damage in the crystallographic structure. Annealing process of GaN is challenging due to unwanted material thermal decomposition above 800°C.
In the Unipress Doctoral Seminar, Kacper Sierakowski, MSc from Crystal Growth Laboratory, Institute of High Pressure Physics will present the talk „Diffusion of acceptors in ion implanted gallium nitride grown by halide vapor phase epitaxy”.
The presentation will summarize the main results of his PhD thesis. He will discuss the application of ultra-high-pressure annealing (UHPA) for efficient electrical activation of ion implanted GaN and remarkable structural recovery. A strong dependence of diffusion on the crystallographic orientation and impurities composition was observed for all analyzed acceptor dopants.
Join us online via Zoom platform on Thursday, August 22, 2024 at 3:00 p.m. To get the link to Zoom meeting, please contact us at dyrekcja@unipress.waw.pl
Abstract of the talk is here.
