Instytut Wysokich Ciśnień

Compound Semiconductors summarizes the recent advances in hexagonal boron nitride (h-BN) crystallization achieved in the Institute of High Pressure Physics (Poland) and Institute of Semiconductor Physics (Ukraine) in the article "Producing high-quality hexagonal BN".

Find out about initial experiments results and the importance of BN-solvent equilibrium conditions determination for further improvements.

Figure. hBN crystal grown from Ni-Cr solution at 0.1 GPa N₂ pressure at 1450 °C. The growth hillock is visible in the central part, proving that growth also takes place in the direction of the c-axis.