Institute of High Pressure Physics

Plastically relaxed InGaN layers are a promising prospect for bulk substrates with a lattice constant larger than that of GaN substrates. Research on such structures is ongoing in the NL-12 laboratory. We are pleased to announce the recent publication of the article by J. Moneta et al. "Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN" in the prestigious journal Acta Materialia, where the authors describe the effect of GaN substrate misorientation on the strain relaxation processes of InGaN layers. The study shows that commonly used procedure for assessing the degree of relaxation in wurtzite epitaxial layers can lead to significant measurement errors and misleading conclusions. Due to the lattice deformations that occur, advanced XRD characterization is required. We encourage you to read the full article.