Institute Thursday Seminar
| Seminars - PT |
Ion implantation and annealing became recently an interesting route to change electrical properties of GaN, enabling for instance to go beyond the epitaxy capabilities in terms of doping. Understanding the process of defect formation seems to be crucial for the contol of the material properties after ion implantation.
Institute of High Pressure Physics invites to an open seminar of prof. Akira Uedono from the Faculty of Pure and Applied Sciences, University of Tsukuba, Japan. The title of his presentation is "Vacancy-type defects in GaN studied by positron anihilation spectroscopy".
The seminar will be held in person at Prymasa Tysiąclecia 98 (seminar room, second floor) in the Institute of High Pressure Physics on Friday, November 24, 2023 at 3:00 pm.
