IHPP PAS Seminar on Nitride Semiconductors
| Seminars - NS |
Dear Ladies and Gentlemen,
We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is scheduled on Monday 12.06.2023 at 14:00.
Speaker: dr inż. Paweł Prystawko (IHPP PAS, NL-12)
Title: Compensation control of n-type GaN using intrinsic Carbon from TMGa precursor in MOVPE growth for Vertical GaN Power Devices
Abstract:
There is intrinsic residual doping with carbon in MOVPE grown GaN due to presence of carbon in organic precursor chemicals TMG and TEG. Usually n-type layers and unintentionally doped layers grown in standard growth conditions result in carbon incorporation as high as 10^17cm-3. It has been demonstrated that, if carbon content approached silicon donor value, an abrupt drop of electron mobility is observed. We investigated non-standard growth conditions to promote fast methyl radical elimination with active hydrogen originating from decomposed ammonia and resulted in reduction of carbon doping. These are: high growth pressure, high temperature as well as control of supersaturation by means of high V/III group ratio. It allows to reduce residual carbon doping below 1 x 10^16cm-3.
Sincerely,
Tadeusz Suski
Piotr Perlin
Anna Kafar
