Institute Thursday Seminar
| Seminars - PT |
Vertical GaN power devices are promising candidates for future kV-class power electronics due to the wide bandgap and high critical electric field (EC) of GaN. Vertical architectures provide the possibility of downsizing the devices and increasing their reliability. However, still a few challenges have to be addressed such as selective area doping, Schottky contact formation and drift layer growth.
In the next Thursday UNIPRESS seminar, Kacper Sierakowski from our Institute, the Crystal Growth Laboratory, will present the current state of the art in ion implantation in GaN and summarize the recent progress in the design of Junction Barrier Schottky (JBS) diodes.
The Seminar “Magnesium ion implantation – key technology for GaN power electronics” will be held on Thursday, May 25, 2023 at 15:00 on Zoom platform. To get the link to join the seminar, please contact us at dyrekcja@unipress.waw.pl
