Michal Bockowski - What has recently been discovered and what we still need to find out about crystallization of truly bulk GaN
Henryk Turski - Competition between built-in polarization and p-n junction field in III-nitride heterostructures
Czeslaw Skierbiszewski - How tunnel junctions changed our perception of III-N optoelectronic devices
Contributed talks:
I. Grzegory - Melting vs decomposition of GaN – Ab initio molecular dynamics study
T. Suski - Quantum confined Stark Effect screening efficiency induced by the optical excitation in symmetric double InGaN/GaN quantum wells - role of barrier width and temperature
N. Fiuczek - Electrochemical etching of p-type GaN
A. Kafar - P-Cladding layer utilizing polarization doping for blue-violet InGaN laser diodes
M. Sawicka - Blue laser diodes with nanoporous bottom cladding – device fabrication and properties
T. Sochacki - Suppressing lateral growth during bulk GaN crystallization as a key factor for obtaining thick crystals with high structural quality
T. Sochacki - Fundamental studies on crystallization and reaching the equilibrium shape in basic ammonothermal method – growth on a native lenticular seed
M. Iwinska - Carbon in highly conductive and semi-insulating bulk GaN crystals
S. Grzanka - InGaN laser diodes with ZnO – Al-based contact layers
M. Grabowski - Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
K. Saba - Low absorptive nitride waveguides for application in photonic integrated circuits
P. Kruszewski - Compensation control of n-type GaN using intrinsic carbon from TMGa precursor in MOVPE growth for vertical GaN power devices
K. Sierakowski - Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE
Posters:
K. Grabianska - On stress induced polarization effect in ammonothermally-grown GaN crystals
P. Jaroszyński - Ultra-high-pressure doping of gallium nitride with europium
M. Żak - Modeling of convective transport in crystallization of gallium nitride by basic ammonothermal method
T. Sochacki - Evolution of the growth mode and its consequences during bulk crystallization of GaN
E. Grzanka - Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
R. Hrytsak - DFT based modeling of point defect diffusion across the In0.125Ga0.875N/GaN and In0.25Ga0.75N/GaN interfaces
M. Zajac - Identification and quantitative analysis of point defects in semi-insulating GaN:Mg ammonothermal crystals
J. L. Weyher - Defects in ammonothermal GaN crystals
M. Zając - High-temperature properties of electron transport in semi-insulating GaN:Mn monocrystals
L. Konczewicz - Negative magnetoresistivity in highly doped N-Type GaN
A. Lachowski - Effect of point defects diffusion on the efficiency of InGaN quantum wells
M. Leszczyński - X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
I. Levchenko - Interface state effect on the properties of a Pd-based contact on p-GaN
K. Sierakowski - Lateral diffusion of magnesium in GaN grown by HVPE
G. Muzioł - Direct experimental evidence for "dark charge" in wide InGaN quantum wells
J. Smalc-Koziorowska - Core configurations and glide motion of Shockley partial dislocations in GaN by aberration-corrected HRTEM
L. Konczewicz - Electrical transport properties of highly doped N-Type GaN materials
I. Levchenko - Passivation of p-GaN surface for ohmic contact formation
K. Sierakowski - Investigation of zinc diffusion for various crystallographic directions in GaN grown by HVPE
T. Sochacki - Evolution of the growth mode and its consequences during bulk crystallization of GaN
S. Grzanka - Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
T. Suski - Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
P. Kruszewski - On the nature of some defects with deep levels in n-type GaN from a study of electric-field enhancement of their electron emission rates
A. Kafar - Micro-disc and micro-ribbon shaped InGaN active region fabricated on corrugated substrates
E. Grzanka - Influence of structural defects in the In0.3Ga0.7N/GaN QWs on their evolution during p-type layers growth
M. Chlipała - Superconducting NbN contact to III-Nitride LED
M. Hajdel - Polarization-induced optical thyristor based on III-Nitrides
M. Iwinska - Study of HVPE-GaN doped with silicon
G. Muzioł - High temperature growth of InGaN in plasma assisted molecular beam epitaxy – a path towards improvement of quantum efficiency
M. Żak - Red to blue wavelength-tunable light emitting diode
