Institute of High Pressure Physics

Four invited papers and three oral communications will be presented at the upcoming EMRS Fall Meeting. In Symposium F (Ultra wide-band-gap semiconductors for energy and electronics) Konrad Sakowski will present an invited paper entitled. "Polarization-doping of AlGaN laser diode in numerical simulations".  At Symposium G (New frontiers in wide-band-gap semiconductors and heterostructures for electronics, optoelectronics and sensing) Gosia Iwinska will present an invited paper entitled. "Recent progress in crystallization of bulk gallium nitride: wafers for vertical power devices". During this symposium, Piotr Kruszewski, Pawel Prystawko and Michal Bockowski will present their latest results on nitride semiconductors. During the combined session of symposia F and G, Prof. Stanislaw Krukowski will deliver an invited paper entitled "The Adsorption of Aluminum. "Adsorption of aluminum and nitrogen at polar AlN surfaces - ab intio picture of AlN growth" and in symposium H Marta Sawicka will present an invited paper entitled "Electrochemical etching for blue laser diodes with nanoporous GaN cladding".