TeamTech

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Project TeamTech

A universal process for overcoming the equilibrium crystal shape in crystal growth from the vapor phase

Project is carried out from 1st October 2018 to 31st March 2022

Programme Description

Project is carried out within the TeamTech programme of the Foundation for Polish Science. Programme TEAM-TECH is co-funded in the framework of Program Operacyjny Inteligentny Rozwój (PO IR) oraz Foundation for Polish Science. Programme TEAM-TECH offers grants for research teams headed by leading scientists carrying out R&D projects related to a new product or production process (technological or manufacturing) of significant importance for the economy.

Project Goal

The goal of this project is to develop a universal process for overcoming the equilibrium crystal shape in gallium nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of crystallized GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallization process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimized, while the growth facet (c-facet) will be stabilized and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The equilibrium crystal shape can be overpowered by a proper thermal field design and that the crystal will follow the thermal field and grow in a direction perpendicular to the isotherms.

International Collaboration

Project is carried out in collaboration with:

Department of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC, USA

Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, (Amano Laboratory), Japan

Publications

Project results have been published in:

  1. M. Amilusik, D. Wlodarczyk, A. Suchocki, M. Bockowski, Jpn. J. Appl. Phys. 58 SCCB32 (2019)
  2. M. Iwinska, M. Zajac, B. Lucznik, M. Fijalkowski, M. Amilusik, T. Sochacki, E. Litwin-Staszewska, R. Piotrzkowski, I. Grzegory, M. Bockowski, Jpn. J. Appl. Phys. 58 SC1047 (2019)
  3. M. Amilusik, T. Sochacki, M. Fijalkowski, B. Lucznik, M. Iwinska, A. Sidor, H. Teisseyre, J. Domagała, I. Grzegory, M. Bockowski, Jpn. J. Appl. Phys. 58 SC1030 (2019)
  4. T. Sochacki, S. Sintonen, J. Weyher, M. Amilusik, A. Sidor, M. Bockowski, Jpn. J. Appl. Phys. 58 SCCB19 (2019)

Lectures

Project results have been presented by:

  1. T. Sochacki, GaN Substrates of the Highest Structural Quality, CIRFE, IMaSS, Nagoya University, 27th May 2019 Japan - invited lecture
  2. T. Sochacki, GaN Substrates of the Highest Structural Quality, CSW2019, 19th-23rd May 2019 Nara, Japan - invited lecture
  3. M. Bockowski, Bulk Growth of GaN-status, perespectives and trends; GPCCG3, Poznan, 17th-21st March, 2019 - invited lecture
  4. M. Iwinska, Semi-insulating HVPE-GaN grown on native seeds, SPIE, Photonics West 2019, 3rd-7th February, San Francisco, USA - contributed
  5. M. Iwińska, Influence of different dopants on the properties of bulk GaN, 4th IDGNS, 18th-20th November, Sendai, Japan –invited lecture
  6. M. Amilusik, Micro-Raman Studies of Strain in Bulk GaN Crystals Grown by Hydride Vapor Phase Epitaxy on Ammonothermal GaN Seeds, IWN2018, 11th-16th November, Kanazawa, Japan –poster
  7. M. Amilusik, Growth of GaN:Mg by Hydride Vapor Phase Epitaxy, IWN2018, 11th-16th November, Kanazawa, Japan –contributed
  8. M. Amilusik, Homoepitaxial Growth by Hydride Vapor Phase Epitaxy of Semi-Polar GaN on Ammonothermal Seeds, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  9. B. Lucznik, Gradient of silicon concentration in HVPE-GaN, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  10. M. Iwińska, Highly resistive HVPE-GaN grown on native seeds - investigation and comparison of different dopants, , IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  11. T. Sochacki Crystallization of GaN by HVPE method with controlled lateral growth, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  12. M. Bockowski, Combination of advantages of HVPE and ammonothermal methods as a solution for crystallization of GaN, IWN2018, 11th-16th November, Kanazawa, Japan –invited lecture
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