-
Krukowski St, Turski LA
Time-dependent solution for a spherically symmetric freezing precipitate
Journal of Crystal Growth, vol.58, no.3, Aug. 1982, pp.631-5 -
Krukowski S, Turski LA
Stress tensor correlation functions and elastic moduli for an interface-a continuous model approach
Journal of Physics C: Solid State Physics, vol.17, no.32, 20 Nov. 1984, pp.5879-85 -
Krukowski S
A note on the stability analysis of a one-dimensional Bloch wall
Zeitschrift fur Physik B-Condensed Matter, vol.65, no.3, 1987, pp.323-8 -
Grzegory I, Krukowski S
Synthesis and crystal growth of AIIIBV semiconducting compounds under high pressure of nitrogen
Physica Scripta, vol.T39, 1991, pp.242-9 -
Pulicani JP, Krukowski S, Alexander JID, Ouazzani J, Rosenberger F
Convection in an asymmetrically heated cylinder
International Journal of Heat & Mass Transfer, vol.35, no.9, Sept. 1992, pp.2119-30 -
Bockowski M, Krukowski S, Lucznik B
DTA determination of the high-pressure-high-temperature phase diagram of CdSe
Semiconductor Science & Technology, vol.7, no.7, July 1992, pp.994-8 -
Łucznik B, Boćkowski M, Krukowski S
High Pressure High Temperature Thermal Determination of Triple Point in CdSe
High Pressure Research, vol. 10, 1992, pp.420-4 -
Tedenac JC, Record MC, Ayral-Marin RM, Brun G, Jun J, Grzegory I, Krukowski S, Bockowski M
Phase transformations and p-T diagram of some HgX compounds (X=S, Se, Te)
Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.26-30 -
Grzegory I, Jun J, Krukowski S, Perlin P, Porowski S.
InN thermodynamics and crystal growth at high pressure of N2
Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.343-5 -
Grzegory I, Jun J, Krukowski S, Porowski S.
GaP-GaN pseudobinary system. Crystal growth of GaN from the solution in the liquid GaP.
Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.346-8 -
Grzegory I, Jun J, Krukowski St, Bockowski M, Porowski S
Crystal growth of III-N compounds under high nitrogen pressure
Physica B, vol.185, no.1-4, April 1993, pp.99-102 -
Krukowski S, Turski LA
Diffusion in the distortion field of a dislocation line
Physics Letters A, vol.175, no.5, 19 April 1993, pp.349-52 -
Porowski S, Jun J, Krukowski S, Bockowski M, Tedenac JC, Record MC
High pressure differential thermal analysis (DTA) and crystal growth of α-HgS.
American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.485-8 -
Grzegory I, Krukowski S, Jun J, Bockowski M, Wroblewski M, Porowski S
Stability of indium nitride at N2 pressure up to 20 kbar.
American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.565-8 -
Bockowski M, Grzegory I, Wroblewski M, Witek A, Jun J, Krukowski S, Porowski S, Ayral-Marin RM, Tedenac JC
Combustion synthesis of AlN at high pressure of nitrogen and argon mixtures
American Institute of Physics Conference Proceedings, no.309, pt.2, 1994, pp.1255-8 -
Grzegory I, Jun J, Bockowski M, Krukowski S, Wroblewski M, Lucznik B, Porowski S
III-V nitrides-thermodynamics and crystal growth at high N2 pressure.
Journal of Physics & Chemistry of Solids, vol.56, no.3-4, March-April 1995, pp.639-47 -
Porowski S, Jun J, Boćkowski M, Leszczynski M, Krukowski St, Wróblewski M Łucznik B, Grzegory I
III-V nitrides - conditions for crystal growth at high N2 pressure
Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.61-8 -
Grzegory I, Jun J, Boćkowski M, Krukowski St, Porowski S
Thermodynamical properties of AlN, GaN and InN
Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.73-6 -
Tedenac JC, Jun J, Krukowski S, Bockowski M, Porowski S, Record M C, Ayral-Marin RM, Brun G
Phase Diagram Determination of II-VI Semiconductors
Thermochimica Acta vol. 245 1994 p. 207 -
Krukowski S, Rosenberger F
Evolution of equilibrium forms of a two-dimensional Kossel crystal in a vapor diffusion field: a Monte Carlo simulation
Physical Review B-Condensed Matter, vol.49, no.18, 1 May 1994, pp.12464-74 -
Krukowski S, Tedenac JC
Fractal to compact transition during growth of 2D Kossel crystal in vapor diffusion field
Journal of Crystal Growth, vol.160, no.1-2, March 1996, pp.167-76 -
Pakula K, Wysmolek A, Korona KP, Baranowski JM, Stepniewski R, Grzegory I, Bockowski M, Jun J, Krukowski S, Wroblewski M, Porowski S
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates.
Solid State Communications, vol.97, no.11, March 1996, pp.919-22 -
Nowak G, Krukowski S, Grzegory I, Porowski S, Baranowski JM, Pakula K, Zak J
Surface morphology of as grown and annealed bulk GaN crystals
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996 -
Teisseyre H, Nowak G, Leszczynski M, Grzegory I, Bockowski M, Krukowski S, Porowski S, Mayer M, Pelzmann A, Kamp M, Ebeling KJ, Karczewski G
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996 -
Grzegory I, Bockowski M, Lucznik B, Krukowski S, Wroblewski M, Porowski S
Recent results in the crystal growth of GaN at high N2 pressure
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996 -
Krukowski S
Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996 -
Krukowski S, Grzegory I, Bockowski M, Jun J, Łucznik B, Witek A Wróblewski M, Baranowski JM, Porowski S, Adamczyk J
Nitrogen high pressure influence on GaN crystal growth conditions - a computational analysis
Proceedings of the Joint XV AIRAPT and XXXIII EHPRG International Conference ed. W. Trzeciakowski, Singapore, World Scientific 1996, pp. 264-6 -
Porowski S, Baranowski JM, Leszczyński M, Jun J, Bockowski M, Grzegory I, Krukowski S, Wróblewski M, Łucznik B, Nowak G, Pakuła K, Wysmołek A, Korona KP, Stepniewski R
Physical Properties of GaN Single Crystalline Substrates and Homoepitaxial Layers
Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes, eds. A. Yoshikawa, K. Kishino, M. Kobayashi, T. Yasuda, Tokyo, Ohsmsha (1996) p.38 -
Nowak G, Krukowski S, Grzegory I, Baranowski J, Pakula K.
Polarity dependent surface morphology of bulk GaN crystals
23rd International Conference on the Physics of Semiconductors. World Scientific. Part vol.1, 1996, pp.557-60 vol.1 -
Krukowski S.
Thermodynamics and high-pressure growth of (Al,Ga,In)N single crystals
Diamond & Related Materials, vol.6, no.10, Aug. 1997, pp.1515-23 -
Porowski S, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Grzegory I, Leszczynski M, Nowak G, Pakula K, Baranowski JM
GaN crystals grown in the increased volume high pressure reactors
III-V Nitrides. Symposium. Mater. Res. Soc. 1997, pp.35-40 -
Bockowski M, Witek A, Krukowski S, Wroblewski M, Porowski S, Marin-Ayral RM, Tedenac JC
Combustion synthesis of aluminum nitride under high pressure of nitrogen and nitrogen-argon mixtures
Journal of Materials Synthesis & Processing, vol.5, no.6, Nov. 1997, pp.449-58 -
Krukowski S, Witek A, Adamczyk J, Jun J, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Presz A, Gierlotka S, Stelmach S, Palosz B, Porowski S, Zinn P
Thermal properties of indium nitride.
Journal of Physics & Chemistry of Solids, vol.59, no.3, March 1998, pp.289-95 -
Witek A, Bockowski M, Presz A, Wroblewski M, Krukowski S, Wlosinski W, Jablonski K
Synthesis of oxygen-free aluminium nitride ceramics
Journal of Materials Science, vol.33, no.13, 1 July 1998, pp.3321-4 -
Prywer J, Krukowski S.
GaN single crystal habits and their relation to GaN growth under high pressure of nitrogen
MRS Internet Journal of Nitride Semiconductor Research, vol.3, 1998 -
Porowski S, Baranowski JM, Leszczynski M, Jun J, Bockowski M, Grzegory I, Krukowski S, Wroblewski M, Lucznik B, Nowak G, Pakula K, Wysmolek A, Korona KP, Stepniewski R
Physical properties of GaN single crystalline substrates and homoepitaxial layers
Blue Laser and Light Emitting Diodes. Ohmsha. 1996, pp.38-41 -
Krukowski S, Romanowski Z, Grzegory I, Porowski S
Interaction of N2 molecule with liquid Ga surface-quantum mechanical calculations (DFT)
Journal of Crystal Growth, vol.189-190, June 1998, pp.159-6 -
Krukowski S, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Leszczynski M, Teisseyre G, Suski T, Porowski S
Recent results in high pressure growth of GaN single crystals
Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Electrochem. Soc. 1998, pp.189-200 -
Grzegory I, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Weyher J, Nowak G, Suski T, Leszczynski M, Teisseyre H, Suski T, Litwin-Staszewska E, Porowski S
GaN crystals: growth and doping under pressure
Nitride Semiconductors Symposium. Mater. Res. Soc. 1998, pp.15-26 -
Porowski S, Grzegory I, Krukowski S
Thermodynamics and growth of GaN single crystals under pressure
High-Pressure Materials Research. Symposium. Mater. Res. Soc. 1998, pp.349-60 -
Lucznik B, Bockowski M, Wroblewski M, Grzegory I, Krukowski S, Nowak G, Leszczynski M, Teisseyre G, Pakula K, Baranowski JM, Suski T, Porowski S
GaN Single Crystals Grown by High Pressure Solution Method
Revues in High Pressure Science and Technology vol. 7 1998 pp.760-2 -
Paszkowicz W, Adamczyk J, Krukowski S, Leszczynski M, Porowski S, Sokolowski JA, Michalec M, Lasocha W.
Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium
Philosophical Magazine A-Physics of Condensed Matter Defects & Mechanical Properties, vol.79, no.5, May 1999, pp.1145-54 -
Krukowski S, Tedenac JC.
Surface diffusion contribution to dendrite sidebranching during growth of 2D Kossel crystal from the vapor
Journal of Crystal Growth, vol.203, no.1-2, May 1999, pp.269-85 -
Zaluska-Kotur MA, Krukowski S, Turski LA
Collective diffusion on hexagonal lattices-repulsive interactions
Surface Science, vol.441, no.2-3, 1 Nov. 1999, pp.320-8 -
Porowski S, Jun J, Krukowski S, Grzegory I, Leszczynski M, Suski T, Teisseyre H, Foxon CT, Korakakis D
Annealing of gallium nitride under high-N2 pressure
Physica B, vol.265, no.1-4, April 1999, pp.295-9 -
Krukowski S
Growth of GaN single crystals under high nitrogen pressures and their characterization
Crystal Research & Technology, vol.34, no.5-6, 1999, pp.785-95 -
Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
Spreading of step-like density profiles in interacting lattice gas on a hexagonal lattice
Surface Science, vol.457, no.3, 10 June 2000, pp.357-64 -
Palczewska M, Wolos A, Kaminska M, Grzegory I, Bockowski M, Krukowski S, Suski T, Porowski S
Electron spin resonance of erbium in gallium nitride
Solid State Communications, vol.114, no.1, 2000, pp.39-42 -
Krukowski S, Bockowski M, Lucznik B, Grzegory I, Porowski S, Suski T, Romanowski Z
High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
Journal of Physics-Condensed Matter, vol.13, no.40, 8 Oct. 2001, pp.8881-9 -
Frayssinet E, Knap W, Krukowski S, Perlin P, Wisniewski P, Suski T, Grzegory I, Porowski S
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
Journal of Crystal Growth, vol.230, no.3-4, Sept. 2001, pp. 442-7 -
Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
Chemical surface diffusion analysis by the time evolution of density profiles. The Monte Carlo simulations
Vacuum, vol.63, no.1-2, 2 July 2001, pp.127-33 -
Zaluska-Kotur MA, Krukowski S, Turski LA
Driven diffusion in a model of the O/W(110) system
Collective Diffusion at Surfaces: Correlation Effects and Adatom Interactions M.C.Tringides and Z. Chvoj (eds.) Kluwer 2001 pp.59-69 -
Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
Collective diffusion of O atoms on the W(110) Surface
Defect and Diffusion Forum, vol. 194-199 2001, pp.309-14 -
Romanowski Z, Krukowski S, Grzegory I, Porowski S
Surface reaction of nitrogen with liquid group III metals
Journal of Chemical Physics, vol.114, no.14, 8 April 2001, pp.6353-63 -
Grzegory I, Krukowski S, Leszczynski M, Perlin P, Suski T, Porowski S
The application of high pressure in physics and technology of III-V nitrides
Acta Physica Polonica A Supplement vol 100 Dec. 2001 pp.57-109 -
Grzegory I, Bockowski M, Krukowski S, Lucznik B, Wroblewski M, Weyher JL, Leszczynski M, Prystawki P, Czernecki R, Lehnert J, Nowak G, Perlin P, Teisseyre H, Purgal W, Krupczynski W, Suski T, Dmowski L, Litwin-Staszewska E, Skierbiszewski C, Lepkowski S, Porowski S
Blue Laser on High N2 Pressure-Grown Bulk GaN
Acta Physica Polonica A Supplement vol 100 Dec. 2001 pp.229-32 -
Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
Twin spin model of surface phase transition in O/W(110)
Physical Review B, vol.65, no.4, 15 Jan. 2002, pp.045404/1-9 -
Krukowski S
Microscopic theory of some thermodynamic properties of the solid-vapor transition
Journal of Chemical Physics, vol.117, no.12, 22 Sept. 2002, pp.5866-75 -
Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
Diffusion and desorption processes in ordered (2x2) lattice gas phase
Surface Science, vol. 507-510, 2002, pp. 150-4 -
Porowski S, Grzegory I, Kolesnikov D, Lojkowski W, Jager V, Jager W, Bogdanov V, Suski T, Krukowski S
Annealing of GaN under high pressure of nitrogen
Journal-of-Physics:-Condensed-Matter. 11 Nov. 2002; 14(44): 11097-110 -
Bockowski M, Lucznik B, Grzegory I, Wroblewski M, Krukowski S, Porowski S
High-pressure direct synthesis of aluminium nitride
Journal-of-Physics:-Condensed-Matter. 11 Nov. 2002; 14(44): 11237-42 -
Grzegory I, Bockowski M, Lucznik B, Krukowski S, Romanowski Z, Wroblewski M, Porowski
Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure
Journal of Crystal Growth, vol. 246, 2002, pp.177-86 -
Bockowski M, Grzegory I, Krukowski S, Lucznik B., Wroblewski M, Romanowski Z, Borysiuk J, Weyher J, Hageman P, Porowski S
Directional crystallization of GaN on high-pressure direct solution grown substrates by growth from solution and HVPE
Journal of Crystal Growth, vol. 246, 2002, pp.194-206 -
Zaluska-Kotur MA, Krukowski S, Turski LA
Collective diffusion in a twin-spin model of O/W(110)
Physical Review B-Condensed Matter, vol.67, no.15, 15 April 2003, pp.155406-17 -
Paszkowicz W, Cerny R, Krukowski S
Rietveld refinement for indium nitride in the 105-295 K range
Powder Diffraction, vol.18, no.2, June 2003, pp.114-21 -
Jezowski A, Danilchenko BA, Bockowski M, Grzegory I, Krukowski S, Suski T, Paszkiewicz T
Thermal conductivity of GaN crystals in 4.2-300 K range
Solid State Communications, vol.128, no.2-3, 2003, pp.69-73 -
Jezowski A, Stachowiak P, Suski T, Krukowski S, Bockowski M, Grzegory I, Danilchenko B
Thermal conductivity of bulk GaN single crystals
Physica B, vol.329-333, 2003, pp.1531-2 -
Jezowski A, Stachowiak P, Plackowski T, Suski T, Krukowski S, Bockowski M, Grzegory I, Danilchenko B, Paszkiewicz T
Thermal conductivity of GaN crystals grown by high pressure
Physica Status Solidi B-Basic Research, vol. 240, 2003, pp.447-50 -
Porowski S, Grzegory I, Krukowski S, Leszczynski M, Perlin R, Suski T
Blue lasers on high pressure grown GaN single crystal substrates
Europhysics News, vol.35, no.3, May-June 2004, pp.69-73 -
M. A. Zaluska-Kotur, A. Lusakowski, S. Krukowski and L. A. Turski
Collective diffusion of O/W(1 1 0) at high coverages: Monte Carlo simulations
Surface Science, vol. 566-568, Part 1, 20 September 2004, Pages 210-215 -
Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
Journal-of-Crystal-Growth. 1 Oct. 2004; 270(3-4): 409-19 -
Bockowski M, Grzegory I, Lucznik B, Krukowski S, Wroblewski M, Kwiatowski P, Jasik K, Wawer W, Borysiuk J, Kamler G, Porowski S
Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method
Physica-Status-Solidi-B. Oct. 2004; 241(12): 2685-8 -
Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
Journal-of-Crystal-Growth. 15 Jan. 2005; 274(1-2): 55-64 -
Prywer-J; Krukowski-S
A Monte Carlo study of the dependence of the habits of Kossel crystal on dynamic parameters during two-dimensional growth
Crystal-Research-and-Technology. April 2005; 40(4-5): 340-6 -
Bockowski-M; Grzegory-I; Borysiuk-J; Kamler-G; Lucznik-B; Wroblewski-M; Kwiatkowski-P; Jasik-K; Krukowski-S; Porowski-S
Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method
Journal-of-Crystal-Growth. 15 July 2005; 281(1): 11-16 -
Krukowski-S; Grzegory-L; Bockowski-M; Lucznik-B; Suski-T; Nowak-G; Borysiuk-J; Wroblewski-M; Leszczynski-M; Perlin-P; Porowski-S; Weyher-JL
Growth of AlN, GaN and InN from the solution
International-Journal-of-Materials-and-Product-Technology. 2005; 22(1-3): 226-61 -
Swietlik-T; Franssen-G; Wisniewski-P; Krukowski-S; Lepkowski-SP; Marona-L; Leszczynski-M; Prystawko-P; Grzegory-I; Suski-T; Porowski-S; Perlin-P; Czernecki-R; Bering-Staniszewska-A; Eliseev-PG
Anomalous temperature characteristics of single wide quantum well InGaN laser diode
Applied-Physics-Letters. 13 Feb. 2006; 88(7): 71121-1-3 -
Krukowski-S; Strak-P
Equation of state of nitrogen (N2 at high pressures and high temperatures: molecular dynamics simulation
Journal-of-Chemical-Physics. 7 April 2006; 124(13): 134501-1-9 -
Lepkowski-SP; Krukowski-S
Theoretical study of current overflow in GaN based light emitters with superlattice cladding layers
Journal-of-Applied-Physics. 1 July 2006; 100(1): 16103-1-3 -
Kempisty-P; Grzegory-I; Bockowski-M; Krukowski-S; Lucznik-B; Pastuszka-B; Porowski-S
Mass flow and reaction analysis of the growth of GaN by HVPE
Physica-Status-Solidi-A. Jan. 2006; 203(1): 131-4 -
Grzegory-I; Lucznik-B; Bockowski-M; Pastuszka-B; Kamler-G; Nowak-G; Krysko-M; Krukowski-S; Porowski-S
Crystallization of GaN by HVPE on pressure grown seeds
Physica-Status-Solidi-A. May 2006; 203(7): 1654-7 -
Krukowski S; Kempisty P; Lucznik B; Pastuszka B; Grzegory I; Bockowski M; Porowski S
CFD and reaction computational analysis of the growth of GaN by HVPE method
Journal-of-Crystal-Growth. 15 Oct. 2006; 296(1): 31-42 -
Lucznik-B; Pastuszka-B; Grzegory-I; Bockowski-M; Kamler-G; Domagala-J; Nowak-G; Prystawko-P; Krukowski-S; Porowski-S
Crystallization of free standing bulk GaN by HVPE
Physica-Status-Solidi-C. 2006; (6): 1453-6 -
Bockowski-M; Grzegory-I; Nowak-G; Lucznik-B; Pastuszka-B; Kamler-G; Wroblewski-M; Kwiatkowski-P; Jasik-K; Wawer-W; Krukowski-S; Porowski-S
Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method
Physica-Status-Solidi-C. 2006; (6): 1487-90 -
Krukowski-S; Skierbiszewski-C; Perlin-P; Leszczynski-M; Bockowski-M; Porowski-S
Blue and UV semiconductor lasers
Acta-Physica-Polonica-B. 1 April 2006; 37(4): 1265-312 -
Swietlik-T; Franssen-G; Wisniewski-P; Krukowski-S; Lepkowski-SP; MAtona-L; Leszczynski-M; Prystawko-P; Grzegory-I; Porowski-S; PerlinP; Czernecki-R; Bering_Staniszewska-A; Eliseev-PG
Anomalous temperature characteristics of single wide quantum well InGaN laser diode
Applied Physics Letters 16 February 2006; 88: 071121-3 -
M. Bockowski, G. Nowak, G. Kamler, B. Lucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski, and I. Grzegory
Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
Proceeding SPIE 3 March 2006 6121; 612103 -
Strak P; Krukowski S
Molecular nitrogen-N2 properties: The intermolecular potential and the equation of state
Journal of Chemical Physics, vol.126, 2007, pp.194501-11 -
Zaluska-Kotur MA; Krukowski S; Lusakowski A; Turski LA
Domain growth in the interacting adsorbate: Nonsymmetric particle jump model
Physical-Review-B-Condensed-Matter-and-Materials-Physics. 15 March 2007; 75(11): 115412-1-6 -
Jolanta Prywer and Stanislaw Krukowski
Growth of 2D nuclei - a Monte Carlo study of existence of various habits
Journal-of-Crystal-Growth. 1 May 2007; 303(1): 23-9 -
Pawel Kempisty and Stanislaw Krukowski
Crystal growth of GaN on (0001) face by HVPE - atomistic scale simulation
Journal-of-Crystal-Growth. 1 May 2007; 303(1): 37-43 -
Krukowski Stanislaw, Grzegory Izabella, Bockowski Michal, Łucznik Boleslaw, Wróblewski Mirislaw, Porowski Sylwester
Adsorption and dissolution of nitrogen in lithium - QM DFT investigation
Journal-of-Crystal-Growth. 15 June 2007; 304(2): 299-309 -
Bockowski Michal, Grzegory Izabella, Kamler Grzegorz, Lucznik Boleslaw, Krukowski Stanislaw, Wroblewski Miroslaw, Kwiatkowski Pawlel, Jasik Krzysztof, Porowski Sylwester
Platelets and needles: two habits of pressure-grown GaN crystals
Journal-of-Crystal-Growth. 2007; 305(2): 414-20 -
Bockowski Michal, Strak Pawel, Kempisty Pawel, Grzegory Izabella, Krukowski Stanislaw, Lucznik Boleslaw and Porowski Sylwester
High pressure - high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport
Journal-of-Crystal-Growth. 2007; 307(2): 259-67 -
S. Krukowski, P. Kempisty, P. Strak, G. Nowak, R. Czernecki, M. Leszczynski, T. Suski, M. Bockowski, and I. Grzegory
Modelling the growth of nitrides in ammonia-rich environment
Crystal-Research-and-Technology. 2007; 42: 1281 -
M. Krysko, G. Franssen, T. Suski, M. Albrecht, B. Lucznik, I. Grzegory, S. Krukowski, R. Czernecki, S. Grzanka, I. Makarowa, M. Leszczyński, and P. Perlin
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
Applied Physics Letters. 21 November 2007: 91, 211904 -
Czernecki Robert, Krukowski Stanislaw, Targowski Grzegorz, Prystawko Pawel, Sarzynski Marcin, Krysko Marcin, Kamler Grzegorz, Grzegory Izabella, Leszczynski Michal and Porowski Sylwester
Strain-compensated AlGaN/GaN/ InGaN cladding layers in homoepitaxial nitride devices
Applied Physics Letters. 6 December 2007: 91, 231914-6 -
Zbigniew Romanowski and Stanislaw Krukowski
Transformation of complex spherical harmonics under rotations
Journal-of-Physics-A:-Mathematical-and-Theoretical. 2007; 40, 15071-82 -
Pawel Kempisty and Stanislaw Krukowski
Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations
Journal-of-Crystal-Growth. 2008; 310: 900-5 -
Romanowski Zbigniew and Krukowski Stanislaw
Numerical evoluation of overlap integrals between atomic orbitals
Journal-of-Molecular-Structure:-THEOCHEM. 15 January 2008; 848(1-3): 34-9 -
Stanislaw Krukowski, Pawel Strak, Pawel Kempisty
Role of chlorine in the dynamics of GaN(0001) surface during HVPE GaN growth: Ab initio study
Journal-of-Crystal-Growth. 2008; 310: 1391-7 -
Pawel Strak and Stanislaw Krukowski
The role of the intermolecular potential in determination of equilibrium and dynamic properties of molecular nitrogen (N2): MD simulations
Journal-of-Physics:-Conference-Series. 2008; 121: 012011 -
Romanowski Zbigniew, Krukowski Stanislaw and Abraham F. Jalbout
Transformation of real spherical harmonics under rotations
Acta-Physica-Polonica-B. 1 August 2008; 39(8): 1985-91 -
M. Siekacz, A. Feduniewicz- Zmuda, G. Cywiński, M. Krysko, J. Smalc, I. Grzegory, S. Krukowski, K. E. Waldrip, W. Jantsch, Z. R. Wasilewski, S. Porowski and C. Skierbiszewski
Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted MBE
Journal-of-Crystal-Growth. 7 June 2008; 310: 3983-6 -
P. Perlin, T. Swietlik, L. Marona, R. Czernecki, T. Suski, M. Leszczynski, I. Grzegory, S. Krukowski, G. Nowak, G. Kamler, A. Czerwinski, M. Plusa, M. Bednarek, J. Rybinski, S. Porowski
Fabrication and properties of GaN-based lasers
Journal-of-Crystal-Growth. 7 June 2008; 310: 3979-82 -
Stanislaw Krukowski, Pawel Kempisty and Abraham F. Jalbout
Thermodynamic and kinetic approach in DFT studies of microscopic structure of GaN(0001) surface in ammonia-rich conditions
Journal of Chemical Physics. 17 December 2008; 129: 234705-1-12; DOI:10.1063/1.3037218 -
Pawel Strak and Stanislaw Krukowski
Molecular dynamic simulations of viscosity of Argon at high pressures
High-Pressure-Research. 1 December 2008; 28:469�476 -
Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
Electrostatic condition for the termination of the opposite face of the slab in DFT simulations of semiconductor surfaces
Journal of Applied Physics. 1 June 2009; 105: 113701-1-5; -
Pawel Kempisty, Stanislaw Krukowski, Pawel Strak and Konrad Sakowski
Ab initio studies of electronic properties of bare GaN(0001) surface
Journal of Applied Physics. 2 September 2009; 106: 054901-1-10; -
Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
GaN growth by ammonia based methods - density functional theory study
Crystal Research and Technology. 1 October 2009; 44: 1038-48; -
Julita Smalc-Koziorowska, Szymon Grzanka, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Grzegorz Nowak, Michal Leszczynski, Piotr Perlin, Ewa Talik, Jan Kozubowski, Stanislaw Krukowski
Ni-Au contacts to p-type GaN - structure and properties
Solid State Electronics - accepted -
Zbigniew Romanowski and Stanislaw Krukowski
Derivation of von Weizsacker equation based on Green-Gauss theorem
Acta Physica Polonica A - accepted