Project LIDER
„Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes”

Programme Description

The purpose of the LIDER Programme is to help young scientists learn how to plan research on their own, manage and lead their own research team while carrying out projects likely to be implemented on the market.
The LIDER Programme is also aimed at encouraging scientists to cooperate with businesses while performing economically valuable and implementable studies and research and enhancing mobility and exchange between research sectors, universities and research units.

Project value: PLN 1 196 500,00
Value of financing: PLN 1 196 500,00
Project financed by the National Center for Research and Development under the LIDER program.

Project Goal

Aim of the project is to develop a process of producing high efficiency green emitting semiconductor diodes based on nitrides. The research conducted in the framework of the project will help in the development of high efficiency light emitters. For realization of the project we will exploit the unique capabilities of the plasma assisted molecular beam epitaxy (PAMBE). Production of laser diode structures with this technique, patented by Institute of High Pressure Physics PAS (IHPP PAS), offers few important advantages. Firstly, thanks to the feasibility of control of the layer thickness up to a single monolayer it is possible to produce quantum wells with a shape which compensate the detrimental effect of built in electrical fields which reduces the efficiency of structures emitting light in green wavelength region. The second advantage of using the PAMBE technique is the low growth temperature (while sustaining the high quality of the crystal). One of the biggest obstacles in the production of green emitting devices by other epitaxial techniques is the decompositions of the quantum wells in high growth temperatures needed to obtain high quality p-type material. In the project we will optimize the growth parameters of p-type layers (grown after the quantum wells) to keep the high quality of the crystal and not to damage the quantum wells. Additionally, use of efficient nitrogen source, recently developed by manufacturers of PAMBE reactors, will allow for development of high quality quantum wells for green laser diodes.

Research Team

Research team of the Project

dr Henryk Turski
dr inż. Marta Sawicka
mgr inż. Krzesimir Nowakowski-
Szkudlarek
Shyam
Bharadwaj
inż. Mikołaj
Chlipała

























Publication list

Project is carried out from 2017 to 2021

Articles published as a result of the LIDER Project:

  1. "Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties", G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, C. Skierbiszewski, Optics Express, 25 (2017) 33113.
  2. "True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy", C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, P. Perlin, Applied Physics Express, 11 (2018) 034103.
  3. "Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE", H. Turski, G. Muzioł, M. Siekacz, P. Wolny, K. Szkudlarek, A. Feduniewicz-Żmuda, K. Dybko, C. Skierbiszewski, Journal of Crystal Growth, 482 (2018) 56-60.
  4. "Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy", M. Hajdel, G. Muziol, K. Nowakowski-Szkudlarek, M. Siekacz, A. Feduniewicz-Żmuda, P. Wolny, C. Skierbiszewski, Acta Physica Polonica A, 136 (2019) 593-597.
  5. "Optical properties of III-nitride laser diodes with wide InGaN quantum wells", G. Muziol, M. Hajdel, M. Siekacz, K. Szkudlarek, S. Stanczyk, H. Turski, C. Skierbiszewski, Applied Physics Express, 12 (2019) 072003.
  6. "Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy", G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, M. Hajdel, J. Smalc-Koziorowska, A. Feduniewicz-Żmuda, E. Grzanka, P. Wolny, H. Turski, P. Wiśniewski, P. Perlin, C. Skierbiszewski, Materials Science in Semiconductor Processing, 91 (2019) 387-391.
  7. "Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices", G. Muziol, H. Turski, M. Siekacz, K. Szkudlarek, L. Janicki, M. Baranowski, S. Zolud, R. Kudrawiec, T. Suski, C. Skierbiszewski, Acs Photonics, 6 (2019) 1963-1971.
  8. "Stack of two III-nitride laser diodes interconnected by a tunnel junction", M. Siekacz, G. Muziol, M. Hajdel, M. Zak, K. Nowakowski-Szkudlarek, H. Turski, M. Sawicka, P. Wolny, A. Feduniewicz-Zmuda, S. Stanczyk, J. Moneta, C. Skierbiszewski, Opt Express, 27 (2019) 5784-5791.
  9. "Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions", H. Turski, S. Bharadwaj, H. Xing, D. Jena, Journal of Applied Physics, 125 (2019) 203104.
  10. "Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE", H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, A. Reszka, B. Kowalski, M. Kryśko, P. Wolny, J. Smalc-Koziorowska, M. Siekacz, G. Muzioł, K. Nowakowski-Szukudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth, 512 (2019) 208-212.
  11. "Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface", H. Turski, F. Krzyżewski, A. Feduniewicz-Żmuda, P. Wolny, M. Siekacz, G. Muziol, C. Cheze, K. Nowakowski-Szukudlarek, H. Xing, D. Jena, M. Załuska-Kotur, C. Skierbiszewski, Applied Surface Science, 484 (2019) 771-780.
  12. "Buried tunnel junction for p-down nitride laser diodes", H. Turski, M. Siekacz, G. Muziol, M. Zak, S. Bharadwaj, M. Chlipala, K. Nowakowski-Szkudlarek, M. Hajdel, H.G. Xing, D. Jena, C. Skierbiszewski, in: 2019 Device Research Conference (DRC), 2019, pp. 241-242.
  13. "Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes", S. Bharadwaj, J. Miller, K. Lee, J. Lederman, M. Siekacz, H. Xing, D. Jena, C. Skierbiszewski, H. Turski, Optics Express, 28 (2020) 4489.
  14. "Nitride light-emitting diodes for cryogenic temperatures", M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski, Optics Express, 28 (2020).
  15. "Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes", M. Hajdel, G. Muzioł, K. Nowakowski-Szkudlarek, M. Siekacz, P. Wolny, C. Skierbiszewski, Optica Applicata, 50 (2020).
  16. "Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy", G. Muziol, M. Hajdel, H. Turski, K. Nomoto, M. Siekacz, K. Nowakowski-Szkudlarek, M. Zak, D. Jena, H.G. Xing, P. Perlin, C. Skierbiszewski, Opt Express, 28 (2020) 35321-35329.
  17. "Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching", M. Sawicka, N. Fiuczek, H. Turski, G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Zmuda, P. Wolny, C. Skierbiszewski, Nanoscale, (2020).
  18. "Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions", M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, C. Skierbiszewski, Electronics, 9 (2020).
  19. "Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design", H. Turski, S. Bharadwaj, M. Siekacz, G. Muziol, M. Chlipala, M. Zak, M. Hajdel, K. Nowakowski-Szkudlarek, S. Stanczyk, H. Xing, D. Jena, C. Skierbiszewski, H. Morkoç, H. Fujioka, U.T. Schwarz, in: Gallium Nitride Materials and Devices XV, 2020.
  20. "Nitride LEDs and Lasers with Buried Tunnel Junctions", H. Turski, M. Siekacz, G. Muziol, M. Hajdel, S. Stanczyk, M. Zak, M. Chlipala, C. Skierbiszewski, S. Bharadwaj, H.G. Xing, D. Jena, Ecs Journal of Solid State Science and Technology, 9 (2020) 015018.
  21. "Enhanced efficiency in bottom tunnel junction InGaN blue LEDs", L. van Deurzen, S. Bharadwaj, K. Lee, V. Protasenko, H. Turski, H. Xing, D. Jena, M. Strassburg, J.K. Kim, M.R. Krames, in: Light-Emitting Devices, Materials, and Applications XXV, 2021.
  22. "Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices", M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, C. Skierbiszewski, Physical Review Applied, 15 (2021)
  23. "Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs", M. Hajdel, M. Chlipała, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, C. Skierbiszewski, and G. Muziol Materials 15, 237 (2022)
  24. "III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources", G. Muziol, M. Hajdel, M. Siekacz, H. Turski, K. Pieniak, A. Bercha, W. Trzeciakowski, R. Kudrawiec, T. Suski, and C. Skierbiszewski, Jpn. J. Appl. Phys. 61(2022)