prof. dr hab. Czesław Skierbiszewski
MBE GROUP LEADER
Professor Czesław Skierbiszewski is the founder and leader of the molecular beam epitaxy (MBE) research group at the Institute of High Pressure Physics Polish Academy of Sciences. He graduated from the Faculty of Physics, University of Warsaw in 1984. After his doctorate, that covered HgSe high-pressure research, he was involved in the research of semiconductors of the GaAs family, doped with nitrogen, so-called "dilluted nitrides". His most important achievement in this field is the determination of InGaNAs effective mass dependence on the N content and on electron concentration. Since 2000 he has been researching epitaxial layers and structures grown on GaN substrates. He is the author of the first european blue nitride laser diode produced by the MBE technique, which he demonstrated in 2001. He fabricates also long-living (>15,000 h) laser diodes and first aluminum-free laser diodes. He has authored more than 140 publications in recognized physics and material science journals (h-index 22).
ORCID: 0000-0002-4718-4607
Research interests
Professor Czesław Skierbiszewski scientific work focuses on the understanding of nitride growth physics by MBE and the optimization of laser and light-emitting diode structures. He fabricates long wavelength emitters of improved optical and electrical characteristics. Professor Skierbiszewski is a world expert in molecular beam epitaxy. Thanks to his close collaboration with TopGaNlaser company, many of the technological solutions is implemented to production.
Research GRANTS:
- 2019 – 2022 Pl in research grant Monolithic superconductor-semiconductor integration using nitride platform – OPUS grant funded by National Science Centre Poland
- 2017 – 2021 Pl in research grant Tunnel junction and its applications for GaN based optoelectronics TEAM TECH grant funded by Foundation for Polish Science, Poland
- 2017 – 2019 Pl in research grant Polar GaN substrates with active N-side manufacturing and evaluation of its usefulness in epitaxy grant funded by National Centre for Research and Development, Poland
- 2014 – 2017 research grant „Terahertz plasma instability in nitride nanostructures” grant funded by National Science Centre,
- 2015 – 2019 EU research grant Short Period Superlattices for Rational (In,Ga)N SPRInG -The EU Framework Programme for Research and Innovation, Horizon 2020,
- 2015 – 2018 Pl research grant „Gallium nitride substrates with nitrogen polarity and its applications in epitaxy” grant founded by National Centre for Research and Development Poland
- 2012 2015 EU research grant „TERA-MIR Radiation: Materials, Generation, Detection and Applications”, grant EU COST MP1204
- 2009 – 2013 EU research grant „Surface engineered InGaN heterostructures on N-polar and nonpolar GaN substrates for green light emitters” SINOPLE - grant EU FP7-PEOPLE-IAPP-2008
- 2012 – 2015 Pl reseach grant „ Green and blue laser nanostructures grown by plasma assisted molecular beam epitaxy on bulk gallium nitride substrates” grant fouded by National Centre for Research and Development - INNOTECH
- 2008 – 2009 US research grant “Visible InGaN Injection Lasers” (VIGIL), grant US DARPA BAA
- 2008 – 2013 Pl research grant „ Fundaments of developments of nitride based emitters for the laser projectors”, grant founded by National Centre for Research and Development - Inicjatywa Technologiczna I
- 2004 – 2007 EU research grant „Nitride Intersubband Devices at Telecommunication Wavelengths” NITWAVE, european grant, STREP, FP6
- 2006 – 2008 Pl reseach grant „ Methods of manufacturing and properties of InGaN layers and InyGa1 yN/InxGa1 xN quantum wells with high In composition on bulk GaN substrates. Nitride based emitters of light in the range 420-550 nm”, grant funded by National Science Centre Poland
- 2001 – 2003 Pl research grant „ Experimental investigations of the band structure and electron properties of InyGa1-yAs1-xNx compounds”, grant funded by National Science Centre Poland
Contact
tel. +48 22 876 0351
lab. +48 22 876 0324
email: czeslaw@unipress.waw.pl
ORCID: 0000-0002-4718-4607