Institute of High Pressure Physics

The Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) is currently the leaseholder  of the Ammono Company, which manufactures gallium nitride (GaN) wafers with the ammonothermal method. The lease has been conducted in the best interest of nitride semiconductor science and technology.

The Ammono Company has been in receivership since 2015. The tenancy, founded by the Polish Ministry of Science and Higher Education, will enable a close cooperation between the groups involved in ammonothermal and Hydride Vapor Phase Epitaxy (HVPE) crystallization of GaN. The latter is performed at IHPP PAS and as a result of common projects a possible synergy of these two methods has been revealed. Ammono owns a pilot line of ammonothermal GaN wafers and IHPP PAS is building a pilot line for HVPE GaN substrates.

The lease and collaboration will lead to further development of both methods and, in the future, to merging of the two technologies and mass production of high-quality GaN wafers required for electronic and optoelectronic devices based on GaN. The tenancy will also enable knowledge transfer among researchers involved in GaN crystallization for more than two decades.

Granty Fundacji na rzecz Nauki Polskiej

W ostatnim Konkursie TEAM, Fundacji na rzecz Nauki Polskiej nasz Instytut uzyskał dwa nowe ważne Granty:

1. Terahertz Sensor Based on Topological Materials

Kierownik Projektu: Prof. dr hab. Wojciech Knap
Z-ca Kierownika:    Dr Grzegorz Cywinski

2. Wpływ defektów punktowych na rozkład studni kwantowych InGaN w technologii laserów i diod elektroluminescencyjnych emitujących w obszarze niebieskim i zielonym

Kierownik Projektu: Prof. dr hab. Michal Leszczynski
Z-ca Kierownika:    Dr inż. Julita Smalc-Koziorowska

7th International Workshop on Crystal Growth Technology (IWCGT-7) will be held from 2nd to 6th July 2017 in Potsdam (near Berlin), Germany. Our Institute will be represented by Michal Fijalkowski and Michal Bockowski.

Two posters and one invited lecture will be demonstrated. The title of the lecture is Status, perspectives and trends on bulk growth of GaN. The posters are entitled: Highly resistive HVPE-GaN grown on native seeds with solid iron or methane as a source of dopants and Comparison of structural, optical, and electrical properties of highly conductive HVPE-GaN doped with Si or Ge and grown on native seeds, respectively.