NL12 Publication list since 2016:
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers, R. Czernecki, E. Grzanka, P. Strak, G. Targowski, S. Krukowski, P. Perlin, ..., Journal of Crystal Growth 464, 123-126, 2017
AlGaN HEMTs on patterned resistive/conductive SiC templates, P. Prystawko, M. Sarzynski, A. Nowakowska-Siwinska, D. Crippa, ..., Journal of Crystal Growth 464, 159-163, 2017
Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2°-off silicon carbide substrates, P. Kruszewski, M. Grabowski, P. Prystawko, A. Nowakowska-Siwinska, ..., Physica status solidi (a) 214 (4), 2017
Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates, A. Gkanatsiou, C.B. Lioutas, N. Frangis, E.K. Polychroniadis, P. Prystawko, ..., Superlattices and Microstructures 103, 376-385, 2017
AlGaInN laser-diode technology for optical clocks and atom interferometry, S.P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, M. Leszczyński, ..., SPIE OPTO, 101041L-101041L-7, 2017
Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks, S.P. Najda, T. Slight, P. Perlin, O. Odedina, T. Suski, L. Marona, S. Stanczyk, ..., Journal of Physics: Conference Series 810 (1), 012053, 2017
AlGaInN diode-laser technology for optical clocks and atom interferometry, S.P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, M. Leszczyński, ..., Journal of Physics: Conference Series 810 (1), 012052, 2017
Advances in AlGaInN laser diode technology for defence, security and sensing applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczynski, ..., SPIE Security+ Defence, 99920C-99920C-7, 2016
High speed visible light communication using blue GaN laser diodes, S. Watson, S. Viola, G. Giuliano, S.P. Najda, P. Perlin, T. Suski, L. Marona, ..., SPIE Security+ Defence, 99910A-99910A-7, 2016
Hybrid reciprocal lattice: application to layer stress determination in GaAlN/GaN (0001) systems with patterned substrates, J.Z. Domagała, S.L. Morelhao, M. Sarzyński, M. Maździarz, P. Dłużewski, ..., Journal of Applied Crystallography 49 (3), 2016
Advances in AlGaInN laser diode technology for defence and sensing applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczynski, ..., SPIE Defense+ Security, 98340K-98340K-7, 2016
Free-space and underwater GHz data transmission using AlGaInN laser diode technology, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, ..., SPIE Defense+ Security, 983309-983309-6, 2016
AlGaInN laser diode bar and array technology for high-power and individual addressable applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, ..., SPIE Photonics Europe, 98920Z-98920Z-7, 2016
AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Bóckowski, M. Leszczyński, ..., SPIE LASE, 97390U-97390U-7, 2016
AlGaInN laser diode technology for systems applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Bockowski, M. Leszczyński, ..., SPIE OPTO, 974819-974819-9, 2016
HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut (TM), M. Iwinska, M. Amilusik, M. Fijalkowski, et al., JOURNAL OF CRYSTAL GROWTH 456,73-79, 2016
High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis , A. Kaminska, D. Jankowski, P. Strak, et al., JOURNAL OF APPLIED PHYSICS 120 (9), 095705, 2016
Correlation of optical and structural properties of GaN/AIN multi-quantum wells-Ab initio and experimental study, A. Kaminska, P. Strak, J. Borysiuk, et al. JOURNAL OF APPLIED PHYSICS 119 (1), 015703, 2016
Mechanical properties and microstructure of ultrafine grained commercial purity aluminium prepared by cryo-hydrostatic extrusion, W. Pachla, M. Kulczyk, J. Smalc-Koziorowska, M. Wróblewska, J. Skiba, S. Przybysz, M. Przybysz , Materials Science and Engineering A 695, 178, 2017
Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates, J. Z. Domagala, J. Smalc-Koziorowska, M. Iwinska, T. Sochacki, M. Amilusik, B. Lucznik, M. Fijalkowski, G. Kamler, I. Grzegory, R. Kucharski, M. Zajac, M. Bockowski, Journal of Crystal Growth vol. 456, 80, 2016
Homoepitaxial growth of HVPE-GaN doped with Si, M. Iwinska, T. Sochacki, M. Amilusik, P. Kempisty, B. Lucznik, M. Fijalkowski, E. Litwin-Staszewska, J. Smalc-Koziorowska, A. Khapuridze, G. Staszczak, I. Grzegory, M. Bockowski, Journal of Crystal Growth vol. 456, 91, 2016
The influence of nanostructure size on V2O5 electrochemical properties as cathode materials for lithium ion batteries, M. Przesniak-Welenc. J. Karczewski, J. Smalc-Koziorowska, M. Łapinski, W. Sadowski, B. Koscielska, RSC Advances vol 6, 55689, 2016
Impact of temperature-induced coalescence on SERS properties of Au nanoparticles deposited on GaN nano-columns, I. Dziecielewski, J. Smalc-Koziorowska, M. Bankowska, T. Sochacki, A. Khachapuridze, J. Weyher, , APPLIED SURFACE SCIENCE vol. 378, 30, 2016
Strain relaxation in semipolar (20-21) InGaN grown by plasma assisted molecular beam epitaxy, M. Sawicka, M. Krysko, G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Smalc-Koziorowska, C. Skierbiszewski, Journal of Applied Physics vol. 119, 185701, 2016
Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures, J. Smalc-Koziorowska, C. Bazioti, M. Albrecht, G.P. Dimitrakopulos, Applied Physics Letters vol 108, 051901, 2016
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers, R. Czernecki, E. Grzanka, P. Strak, G. Targowski, S. Krukowski, P. Perlin,T. Suski and M. Leszczynski, Journal of Crystal Growth, 2016.
A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations, P. Drozdz, K. Korona, M. Sarzynski, R. Czernecki, C. Skierbiszewski, G. Muziol and T. Suski, Acta Physica Polonica, A., 130(5), 2016.
Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN, L. Marona, J. Smalc-Koziorowska, E. Grzanka, M. Sarzynski, T. Suski, D. Schiavon, R. Czernecki, P. Perlin, R. Kucharski and J. Domagala, Semiconductor Science and Technology, 31(3), 2016.
Development of the Nitride Laser Diode Arrays for Video and Movie Projectors, P. Perlin, S. Stanczyk, S. Najda, T. Suski, P. Wisniewski, I. Makarowa, L Marona, A. Kafar, A. Bojarska, R. Czernecki, MRS Advances, 1(02), 2016.
Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes, G. Cywiński, K. Szkudlarek, P. Kruszewski, I. Yahniuk, S. Yatsunenko, G. Muzioł, C. Skierbiszewski, W. Knap, S. L. Rumyantsev, Appl. Phys. Lett. 109, 033502 (2016)
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications, G. Cywiński, K. Szkudlarek, P. Kruszewski, I. Yahniuk, S. Yatsunenko, G. Muzioł, M. Siekacz, C. Skierbiszewski, S. Rumyantsev, W. Knap, Journal of Vacuum Science & Technology B, B 34, 02L118 (2016)
GaN/AlGaN lateral Schottky barrier diodes for high frequency applications, G. Cywiński, K. Szkudlarek, I. Yahniuk, S. Yatsunenko, P. Kruszewski, G. Muzioł, C. Skierbiszewski, W. Knap, S. Rumyantsev, D. But, IEEE Conference Publication 2016 – 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) (2016)
Lateral Schottky barrier diodes based on GaN/AlGaN 2DEG for sub-THz detection, G. Cywiński, I. Yahniuk, K. Szkudlarek, P. Kruszewski, S. Yatsunenko, G. Muzioł, C. Skierbiszewski, D. But, W. Knap IEEE Conference Publication 2016 – 23rd International Conference Mixed Design of Integrated Circuits and Systems (MIXDES) (2016)