Laboratory of Semiconductor Characterization

Publications


NL12 Publication list since 2016:

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers, R. Czernecki, E. Grzanka, P. Strak, G. Targowski, S. Krukowski, P. Perlin, ..., Journal of Crystal Growth 464, 123-126, 2017

 

AlGaN HEMTs on patterned resistive/conductive SiC templates, P. Prystawko, M. Sarzynski, A. Nowakowska-Siwinska, D. Crippa, ..., Journal of Crystal Growth 464, 159-163, 2017

 

Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2°-off silicon carbide substrates, P. Kruszewski, M. Grabowski, P. Prystawko, A. Nowakowska-Siwinska, ..., Physica status solidi (a) 214 (4), 2017

 

Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates, A. Gkanatsiou, C.B. Lioutas, N. Frangis, E.K. Polychroniadis, P. Prystawko, ..., Superlattices and Microstructures 103, 376-385, 2017

 

AlGaInN laser-diode technology for optical clocks and atom interferometry, S.P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, M. Leszczyński, ..., SPIE OPTO, 101041L-101041L-7, 2017

 

Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks, S.P. Najda, T. Slight, P. Perlin, O. Odedina, T. Suski, L. Marona, S. Stanczyk, ..., Journal of Physics: Conference Series 810 (1), 012053, 2017

 

AlGaInN diode-laser technology for optical clocks and atom interferometry, S.P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, M. Leszczyński, ..., Journal of Physics: Conference Series 810 (1), 012052, 2017

 

Advances in AlGaInN laser diode technology for defence, security and sensing applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczynski, ..., SPIE Security+ Defence, 99920C-99920C-7, 2016

 

High speed visible light communication using blue GaN laser diodes, S. Watson, S. Viola, G. Giuliano, S.P. Najda, P. Perlin, T. Suski, L. Marona, ...,  SPIE Security+ Defence, 99910A-99910A-7, 2016

 

Hybrid reciprocal lattice: application to layer stress determination in GaAlN/GaN (0001) systems with patterned substrates, J.Z. Domagała, S.L. Morelhao, M. Sarzyński, M. Maździarz, P. Dłużewski, ..., Journal of Applied Crystallography 49 (3), 2016

 

Advances in AlGaInN laser diode technology for defence and sensing applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczynski, ..., SPIE Defense+ Security, 98340K-98340K-7, 2016

 

Free-space and underwater GHz data transmission using AlGaInN laser diode technology, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, ..., SPIE Defense+ Security, 983309-983309-6, 2016

 

AlGaInN laser diode bar and array technology for high-power and individual addressable applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, ..., SPIE Photonics Europe, 98920Z-98920Z-7, 2016

 

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Bóckowski, M. Leszczyński, ..., SPIE LASE, 97390U-97390U-7, 2016

 

AlGaInN laser diode technology for systems applications, S.P. Najda, P. Perlin, T. Suski, L. Marona, M. Bockowski, M. Leszczyński, ..., SPIE OPTO, 974819-974819-9, 2016

 

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut (TM), M. Iwinska, M. Amilusik, M. Fijalkowski, et al., JOURNAL OF CRYSTAL GROWTH 456,73-79, 2016

 

High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis , A. Kaminska, D. Jankowski, P. Strak, et al., JOURNAL OF APPLIED PHYSICS 120 (9), 095705, 2016

 

Correlation of optical and structural properties of GaN/AIN multi-quantum wells-Ab initio and experimental study, A. Kaminska, P. Strak, J. Borysiuk, et al. JOURNAL OF APPLIED PHYSICS 119 (1), 015703, 2016

 

Mechanical properties and microstructure of ultrafine grained commercial purity aluminium prepared by cryo-hydrostatic extrusion, W. Pachla,  M. Kulczyk, J. Smalc-Koziorowska, M. Wróblewska, J. Skiba, S. Przybysz, M. Przybysz , Materials Science and Engineering A 695, 178, 2017

 

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates, J. Z. Domagala, J. Smalc-Koziorowska, M. Iwinska, T. Sochacki, M. Amilusik, B. Lucznik, M. Fijalkowski, G. Kamler, I. Grzegory, R. Kucharski, M. Zajac, M. Bockowski, Journal of Crystal Growth vol. 456, 80, 2016

 

Homoepitaxial growth of HVPE-GaN doped with Si, M. Iwinska, T. Sochacki, M. Amilusik, P. Kempisty, B. Lucznik, M. Fijalkowski, E. Litwin-Staszewska, J. Smalc-Koziorowska, A. Khapuridze, G. Staszczak, I. Grzegory, M. Bockowski, Journal of Crystal Growth vol. 456, 91, 2016

 

The influence of nanostructure size on V2O5 electrochemical properties as cathode materials for lithium ion batteries, M. Przesniak-Welenc. J. Karczewski, J. Smalc-Koziorowska, M. Łapinski, W. Sadowski, B. Koscielska, RSC Advances vol 6, 55689, 2016

 

Impact of temperature-induced coalescence on SERS properties of Au nanoparticles deposited on GaN nano-columns, I. Dziecielewski, J. Smalc-Koziorowska, M. Bankowska, T. Sochacki, A. Khachapuridze, J. Weyher, , APPLIED SURFACE SCIENCE vol. 378, 30, 2016

 

Strain relaxation in semipolar (20-21) InGaN grown by plasma assisted molecular beam epitaxy, M. Sawicka, M. Krysko, G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Smalc-Koziorowska, C. Skierbiszewski, Journal of Applied Physics vol. 119, 185701, 2016

 

Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures, J. Smalc-Koziorowska, C. Bazioti, M. Albrecht, G.P. Dimitrakopulos, Applied Physics Letters vol 108, 051901, 2016

 

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers, R. Czernecki, E. Grzanka, P. Strak, G. Targowski, S. Krukowski, P. Perlin,T. Suski and M. Leszczynski, Journal of Crystal Growth, 2016.

 

A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations, P. Drozdz, K. Korona, M. Sarzynski, R. Czernecki, C. Skierbiszewski, G. Muziol and T. Suski, Acta Physica Polonica, A., 130(5), 2016.

 

Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN, L. Marona, J. Smalc-Koziorowska, E. Grzanka, M. Sarzynski, T. Suski, D. Schiavon, R. Czernecki, P. Perlin, R. Kucharski and J. Domagala, Semiconductor Science and Technology, 31(3), 2016.

 

Development of the Nitride Laser Diode Arrays for Video and Movie Projectors, P. Perlin, S. Stanczyk, S. Najda, T. Suski, P. Wisniewski, I. Makarowa, L Marona, A. Kafar, A. Bojarska, R. Czernecki, MRS Advances, 1(02), 2016.

 

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes, G. Cywiński, K. Szkudlarek, P. Kruszewski, I. Yahniuk, S. Yatsunenko, G. Muzioł, C. Skierbiszewski, W. Knap, S. L. Rumyantsev, Appl. Phys. Lett. 109, 033502 (2016)

 

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications, G. Cywiński, K. Szkudlarek, P. Kruszewski, I. Yahniuk, S. Yatsunenko, G. Muzioł, M. Siekacz, C. Skierbiszewski, S. Rumyantsev, W. Knap, Journal of Vacuum Science & Technology B, B 34, 02L118 (2016)

 

GaN/AlGaN lateral Schottky barrier diodes for high frequency applications, G. Cywiński, K. Szkudlarek, I. Yahniuk, S. Yatsunenko, P. Kruszewski, G. Muzioł, C. Skierbiszewski, W. Knap, S. Rumyantsev, D. But, IEEE Conference Publication 2016 – 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) (2016)

 

 

Lateral Schottky barrier diodes based on GaN/AlGaN 2DEG for sub-THz detection, G. Cywiński, I. Yahniuk, K. Szkudlarek, P. Kruszewski, S. Yatsunenko, G. Muzioł, C. Skierbiszewski, D. But, W. Knap IEEE Conference Publication 2016 – 23rd International Conference Mixed Design of Integrated Circuits and Systems (MIXDES) (2016)

 

 

 

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