Laboratory of Semiconductor Characterization
Laboratory of Semiconductor Characterization
The Laboratory of Semiconductor Characterization was created on the basis of the division of the NL-2 laboratory in 2017.
Our main focus is conducting research in the area of growth conditions of nitride semiconductor layers through MOVPE method, as well as its characteristics.
Our gained knowledge and experience enables us to produce electronic devices such as Schottky’s diodes, HEMT and optoelectronics like LED or lasers.
We are currently researching growth conditions of InGaN/GaN and AlGaN/GaN quantum wells, mechanisms of their relaxation and physical characteristics.
Furthermore, our goal is to understand the characteristics of surface-based layers and their modified methods.
Our main focus is conducting research in the area of growth conditions of nitride semiconductor layers through MOVPE method, as well as its characteristics.
Our gained knowledge and experience enables us to produce electronic devices such as Schottky’s diodes, HEMT and optoelectronics like LED or lasers.
We are currently researching growth conditions of InGaN/GaN and AlGaN/GaN quantum wells, mechanisms of their relaxation and physical characteristics.
Furthermore, our goal is to understand the characteristics of surface-based layers and their modified methods.