Wyniki naukowe

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  1. Teoria przejsc fazowych I rodzaju

  2. Adsorpcja i rozpuszczanie gazów dwuatomowych na powierzchniach cieklych metali

  3. Adsorpcja, dyfuzja powierzchniowa oraz uporzadkowanie - O/W(110) oraz inne powierzchnie

  4. Wlasności powierzchni pólprzewodników, adsoprcja

  5. Wzrost azotków w srodowisku amoniakalnym
    • Teoria wzrostu HVPE
    • Teoria wzrostu MOVPE

  6. Wysokocisnieniowy wzrost GaN i innych azotkow
    • diagramy fazowe p-T: GaN, AlN and InN
    • diagramy fazowe x-T: GaN, AlN and InN
    • Transport podczas wzrostu

  7. Wyznaczanie wlasnosci struktur kwantowych i przyrzadów

  8. Wyznaczanie wlasnosci azotków metali grupy III: AlN, GaN i InN

  9. Wyznaczanie fizycznych wlasnosci azotu pod wysokim cisnieniem
    • Potencjal oddzialywania N2 - N2
    • Równanie stanu azotu w cisnieniach do 30 GPa
    • Lepkosc azotu w cisnieniach do 5 GPa
    • Cieplo wlasciwe azotu w cisnieniach do 30 GPa
    • Przewodnictwo cieplne azotu w cisnieniach do 5 GPa

  10. Wybor ksztaltu krysztalu w warunkach rownowagi, oraz podczas wzrostu w stanach bliskich i dalekich od stanu rownowagi
    • Rownowaga krysztalu 2-d Kossel - fale kapilarne
    • Wzrost daleki od rownowagi - przejscie fraktal-krysztal
    • Rezim balistyczny i dyfuzyjny - zwiazek pomiedzy rozmiarem zarodka i srednia droga swobodna
    • Tworzenie galezi bocznych dendrytow - mechanizm mikroskopowy
    • Wzrost bardzo bliski stanu rownowagi - wybor ksztaltu dla krysztalu 2-d Kossela
    • Meandrowanie i laczenie stopni

  11. Wyznaczanie diagramow fazowych p-T zwiazkow II-VI
    • DTA - metoda powierzchni piku identyfikacji punktu potrojnego
    • Diagramy fazowe zwiazkow II-VI

  12. Wzrost kulisto-symetrycznego zarodka w osrodku przesyconym
    • Rozwiazanie analityczne

Entropia waporyzacji cial stalych - teoria mikroskopowa
  1. Krukowski S
    Microscopic theory of some thermodynamic properties of the solid-vapor transition
    Journal of Chemical Physics, vol.117, no.12, 22 Sept. 2002, pp.5866-75





Adsoprcja i rozpuszczanie molekularnego azotu N2 na powierzchniach metali grupy IIIs: Aluminium, Galu i Indu
  1. Krukowski S, Romanowski Z, Grzegory I, Porowski S
    Interaction of N2 molecule with liquid Ga surface-quantum mechanical calculations (DFT)
    Journal of Crystal Growth, vol.189-190, June 1998, pp.159-6

  2. Romanowski Z, Krukowski S, Grzegory I, Porowski S
    Surface reaction of nitrogen with liquid group III metals
    Journal of Chemical Physics, vol.114, no.14, 8 April 2001, pp.6353-63





Adsoprcja i rozpuszczanie molekularnego tlenu O2 na powierzchniach metali grupy III: Aluminium, Galu i Indu
  1. Krukowski S, Bockowski M, Lucznik B, Grzegory I, Porowski S, Suski T, Romanowski Z
    High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
    Journal of Physics-Condensed Matter, vol.13, no.40, 8 Oct. 2001, pp.8881-9





Adsoprcja i rozpuszczanie molekularnego azotu N2 w licie
  1. Krukowski Stanislaw, Grzegory Izabella, Bockowski Michal, Łucznik Boleslaw, Wróblewski Mirislaw, Porowski Sylwester
    Adsorption and dissolution of nitrogen in lithium - QM DFT investigation
    Journal-of-Crystal-Growth. 15 June 2007; 304(2): 299-309






Adsorption of O2 on W(110) surface - new model of the adsorption: twin site, phase diagram, diffusion mechanism, ordering
  1. Zaluska-Kotur MA, Krukowski S, Turski LA
    Driven diffusion in a model of the O/W(110) system
    Collective Diffusion at Surfaces: Correlation Effects and Adatom Interactions M.C.Tringides and Z. Chvoj (eds.) Kluwer 2001 pp.59-69

  2. Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
    Collective diffusion of O atoms on the W(110) Surface
    Defect and Diffusion Forum, vol. 194-199 2001, pp.309-14

  3. Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
    Twin spin model of surface phase transition in O/W(110)
    Physical Review B, vol.65, no.4, 15 Jan. 2002, pp.045404/1-9

  4. Zaluska-Kotur MA, Krukowski S, Turski LA
    Collective diffusion in a twin-spin model of O/W(110)
    Physical Review B-Condensed Matter, vol.67, no.15, 15 April 2003, pp.155406-17

  5. M. A. Zaluska-Kotur, A. Lusakowski, S. Krukowski and L. A. Turski
    Collective diffusion of O/W(1 1 0) at high coverages: Monte Carlo simulations
    Surface Science, vol. 566-568, Part 1, 20 September 2004, Pages 210-215





Hexagonal lattice - collective diffusion, domain dynamics
  1. Zaluska-Kotur MA, Krukowski S, Turski LA
    Collective diffusion on hexagonal lattices-repulsive interactions
    Surface Science, vol.441, no.2-3, 1 Nov. 1999, pp.320-8

  2. Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
    Spreading of step-like density profiles in interacting lattice gas on a hexagonal lattice
    Surface Science, vol.457, no.3, 10 June 2000, pp.357-64

  3. Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
    Chemical surface diffusion analysis by the time evolution of density profiles. The Monte Carlo simulations
    Vacuum, vol.63, no.1-2, 2 July 2001, pp.127-33

  4. Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
    Diffusion and desorption processes in ordered (2x2) lattice gas phase
    Surface Science, vol. 507-510, 2002, pp. 150-4

  5. Zaluska-Kotur MA; Krukowski S; Lusakowski A; Turski LA
    Domain growth in the interacting adsorbate: Nonsymmetric particle jump model
    Physical-Review-B-Condensed-Matter-and-Materials-Physics. 15 March 2007; 75(11): 115412-1-6





Square lattice - diffusion close to dislocation line
  1. Krukowski S, Turski LA
    Diffusion in the distortion field of a dislocation line
    Physics Letters A, vol.175, no.5, 19 April 1993, pp.349-52




Podstawy modelowania i metody
  1. Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
    Electrostatic condition for the termination of the opposite face of the slab in DFT simulations of semiconductor surfaces
    Journal of Applied Physics. 1 June 2009; 105: 113701-1-5;

  2. Pawel Kempisty, Stanislaw Krukowski, Pawel Strak and Konrad Sakowski
    Ab initio studies of electronic properties of bare GaN(0001) surface
    Journal of Applied Physics. 2 September 2009; 106: 054901-1-10;

  3. Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
    Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
    Journal of Applied Physics - 11 October 2013; 114: 143705-1-12




Wyznaczenie powierzchniowego efektu Starka
  1. Jakub Soltys, Jacek Piechota, Michal Lopuszynski and Stanislaw Krukowski
    A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(0001) clean surfaces: significance of the surface Stark effect
    New Journal of Physics. 13 April 2010; 12: 043024-1-18

  2. Pawel Kempisty and Stanislaw Krukowski
    On the nature of Surface States Stark Effect at clean GaN(0001) surface
    Journal of Applied Physics - 5 December 2012; 112: 113704-1-9



Odkrycie wkladu od wewnatrzpowierzchniowego transferu ladunku do energii adsoprcji
  1. Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
    Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
    Journal of Applied Physics - 9 August 2013; 114:063507-1-10

  2. Stanislaw Krukowski, Pawel Kempisty, Pawel Strak and Konrad Sakowski
    Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces
    Journal of Applied Physics - 31 January 2014; 115: 043529-1-9

  3. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: a new effect associated with the Fermi level position
    Journal of Crystal Growth - August 2014; 401:78-81

  4. Pawel Kempisty, Stanislaw Krukowski
    Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
    AIP Advances - 13 November 2014; 4: 117109-1-24

  5. Maria Ptasinska, Jacek Piechota, Stanislaw Krukowski
    Adsorption of Hydrogen at GaN(0001) Surface – Ab Initio Study
    Journal of Physical Chemistry C - 7 May 2015; 119: 11563 - 9

  6. Pawel Strak, Konrad Sakowski, Pawel Kempisty, Stanislaw Krukowski
    Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab intio approach
    Journal of Applied Physics - 3 September 2015; 118:095705-1-14

  7. Jakub Soltys, Jacek Piechota, Pawel Strak and Stanislaw Krukowski
    Electronic Charge Transfer Contribution in Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
    Applied Surface Science - accepted





Spontaniczna polarizacja, stale elastyczne i piezoelastyczne
  1. Przemyslaw Witczak, Zbigniew Witczak, Ryszard Jemielniak, Marcin Krysko, Stanislaw Krukowski, Michal Bockowski
    Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves
    Semiconductor Science and Technology - 13 January 2015; 30: 035008

  2. Pawel Strak, Konrad Sakowski, Agata Kaminska, and Stanislaw Krukowski
    Influence of pressure on the properties of GaN/AlN multi-quantum wells - ab initio study
    Journal of Physics and Chemistry of Solids - 19 February 2016; 93:100-17





Determination of physical properties of indium nitride: p-T phase diagram, Debye temperature, Gruneisen parameter, lattice constants & thermal expansion coefficient
  1. Krukowski S, Witek A, Adamczyk J, Jun J, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Presz A, Gierlotka S, Stelmach S, Palosz B, Porowski S, Zinn P
    Thermal properties of indium nitride.
    Journal of Physics & Chemistry of Solids, vol.59, no.3, March 1998, pp.289-95

  2. Paszkowicz W, Adamczyk J, Krukowski S, Leszczynski M, Porowski S, Sokolowski JA, Michalec M, Lasocha W.
    Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium
    Philosophical Magazine A-Physics of Condensed Matter Defects & Mechanical Properties, vol.79, no.5, May 1999, pp.1145-54

  3. Paszkowicz W, Cerny R, Krukowski S
    Rietveld refinement for indium nitride in the 105-295 K range
    Powder Diffraction, vol.18, no.2, June 2003, pp.114-21




Azotkowe struktury wielostudni kantowych (MQWs)
  1. Zbigniew Romanowski, Pawel Kempisty, Konrad Sakowski, Pawel Strak, and Stanislaw Krukowski
    Density Functional Theory (DFT) simulations and polarization analysis of the electric field in InN/GaN multiple quantum wells (MQWs)
    Journal of Physical Chemistry C. 9 August 2010; 114:14410-6

  2. Pawel Strak, Pawel Kempisty, Maria Ptasinska, and Stanislaw Krukowski
    Principal physical properties of GaN/AlN multiquantum well (MQWs) systems determined by density functional theory (DFT) calculations
    Journal of Applied Physics - 17 May 2013; 113: 193706-1-15

  3. Agata Kaminska, Pawel Strak, Jolanta Borysiuk, Kamil Sobczak, Jaroslaw Z. Domagala, Mark Beeler, Ewa Grzanka, Konrad Sakowski, Stanislaw Krukowski, and Eva Monroy
    Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study
    Journal of Applied Physics - 7 January 2016; 119:015703-1-10

  4. Pawel Strak, Konrad Sakowski, Agata Kaminska, and Stanislaw Krukowski
    Influence of pressure on the properties of GaN/AlN multi-quantum wells - ab initio study
    Journal of Physics and Chemistry of Solids - 19 February 2016; 93:100-17

  5. Jolanta Borysiuk, Konrad Sakowski, Piotr Drozdz, Krzysztof P. Korona, Kamil Sobczak, Grzegorz Muziol, Czeslaw Skierbiszewski, Agata Kaminska, and Stanislaw Krukowski
    Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N
    Journal of Applied Physics - 6 July 2016; 120: 015702-1-10

  6. Agata Kaminska, Dawid Jankowski, Pawel Strak, Krzysztof P. Korona, Mark Beeler, Konrad Sakowski, Ewa Grzanka, Jolanta Borysiuk, Kamil Sobczak, Eva Monroy and Stanislaw Krukowski
    High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis
    Journal of Applied Physics - 7 September 2016; 120: 095705-1-9




Przyrzady azotkowe: diody i lasery
  • Konrad Sakowski, Leszek Marcinkowski, Stanislaw Krukowski, Szymon Grzanka and Elzbieta Litwin-Staszewska
    Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes
    Journal of Applied Physics - 27 June 2012; 111: 123115-1-7

  • Konrad Sakowski, Pawel Strak, Stanislaw Krukowski, and Dariusz Marcinkowski
    Optimization of InGaN laser diodes based on numerical simulations
    Acta Physica Polonica A - 31 January 2016; 129: 33-5





    Determination of physical properties on nitrogen: intermolecular interaction potential, equation of state, viscosity, specific heat and thermal conductivity
    1. Krukowski-S; Strak-P
      Equation of state of nitrogen (N2 at high pressures and high temperatures: molecular dynamics simulation
      Journal-of-Chemical-Physics. 7 April 2006; 124(13): 134501-1-9

    2. Strak P; Krukowski S
      Molecular nitrogen-N2 properties: The intermolecular potential and the equation of state
      Journal of Chemical Physics, vol.126, 16 May 2007, pp.194501-11

    3. Pawel Strak and Stanislaw Krukowski
      The role of the intermolecular potential in determination of equilibrium and dynamic properties of molecular nitrogen (N2): MD simulations
      Journal-of-Physics:-Conference-Series. 2008; 121: 012011

    4. Pawel Strak and Stanislaw Krukowski
      Molecular dynamic simulations of viscosity of Argon at high pressures
      High-Pressure-Research. 1 December 2008; 28:469–476

    5. Pawel Strak, Stanislaw Krukowski
      Determination of Shear Viscosity of Molecular Nitrogen (N2): Molecular Dynamic Hard Rotor Methodology and the Results
      Journal of Physical Chemistry B - 25 March 2011; 115: 4359-68





    Shape selection in equilibrium, and during growth close and far from the equilibrium
    1. Krukowski S, Rosenberger F
      Evolution of equilibrium forms of a two-dimensional Kossel crystal in a vapor diffusion field: a Monte Carlo simulation
      Physical Review B-Condensed Matter, vol.49, no.18, 1 May 1994, pp.12464-74

    2. Krukowski S, Tedenac JC
      Fractal to compact transition during growth of 2D Kossel crystal in vapor diffusion field
      Journal of Crystal Growth, vol.160, no.1-2, March 1996, pp.167-76

    3. Krukowski S, Tedenac JC.
      Surface diffusion contribution to dendrite sidebranching during growth of 2D Kossel crystal from the vapor
      Journal of Crystal Growth, vol.203, no.1-2, May 1999, pp.269-85

    4. Prywer J, Krukowski S
      A Monte Carlo study of the dependence of the habits of Kossel crystal on dynamic parameters during two-dimensional growth
      Crystal-Research-and-Technology. April 2005; 40(4-5): 340-6

    5. Prywer J, Krukowski S
      Growth of 2D nuclei - a Monte Carlo study of existence of various habits
      Journal-of-Crystal-Growth. 1 May 2007; 303(1): 23-9

    6. Magdalena A. Zaluska-Kotur, Filip Krzyzewski and Stanislaw Krukowski
      Surface patterns due to step flow anisotropy formed in the crystal growth process
      Journal of Noncrystalline Solids 9 June 2010; 356:1935-9

    7. Magdalena A. Zaluska-Kotur, Filip Krzyzewski, Stanislaw Krukowski
      Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions.
      Journal of Applied Physics - 20 January 2011; 109: 023515-1-9

    8. Magdalena A. Zaluska-Kotur, Filip Krzyzewski, and Stanislaw Krukowski
      Emergence of regular, meandered step structure of GaN(0001) surface during simulated crystal growth process
      Journal of Crystal Growth - 28 January 2012; 343: 138-44

    9. Magdalena A. Zaluska-Kotur, Filip Krzyzewski, Stanislaw Krukowski, Robert Czernecki, and Michal Leszczynski
      Structures built by steps motion during sublimation from annealed GaN(0001) surface
      Crystal Growth and Design - 6 February 2013; 13: 1006-13





    Determination of presure-temperature phase diagrams of II-VI compounds
    1. Bockowski M, Krukowski S, Lucznik B
      DTA determination of the high-pressure-high-temperature phase diagram of CdSe
      Semiconductor Science & Technology, vol.7, no.7, July 1992, pp.994-8

    2. Lucznik B, Boćkowski M, Krukowski S
      High Pressure High Temperature Thermal Determination of Triple Point in CdSe
      High Pressure Research, vol. 10, 1992, pp.420-4

    3. Tedenac JC, Record MC, Ayral-Marin RM, Brun G, Jun J, Grzegory I, Krukowski S, Bockowski M
      Phase transformations and p-T diagram of some HgX compounds (X=S, Se, Te)
      Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.26-30

    4. Porowski S, Jun J, Krukowski S, Bockowski M, Tedenac JC, Record MC
      High pressure differential thermal analysis (DTA) and crystal growth of α-HgS.
      American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.485-8

    5. Tedenac JC, Jun J, Krukowski S, Bockowski M, Porowski S, Record M C, Ayral-Marin RM, Brun G
      Phase Diagram Determination of II-VI Semiconductors
      Thermochimica Acta vol. 245 1994 p. 207





    Growth of spherically symmetric nucleus in supersaturated medium
    1. Krukowski St, Turski LA
      Time-dependent solution for a spherically symmetric freezing precipitate
      Journal of Crystal Growth, vol.58, no.3, Aug. 1982, pp.631-5